Patents by Inventor Joseph P. Margetis

Joseph P. Margetis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240011189
    Abstract: Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.
    Type: Application
    Filed: September 26, 2023
    Publication date: January 11, 2024
    Inventors: John Tolle, Joseph P. Margetis
  • Patent number: 11814747
    Abstract: Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.
    Type: Grant
    Filed: April 15, 2020
    Date of Patent: November 14, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: John Tolle, Joseph P. Margetis
  • Publication number: 20200385861
    Abstract: A method of cleaning an epitaxial reaction chamber in-situ is disclosed. The method may include a pre-coating step, a high temperature baking step, and a gas etching step. The method is able to remove residue buildup within the reaction chamber, which may be made of quartz.
    Type: Application
    Filed: May 29, 2020
    Publication date: December 10, 2020
    Inventors: Gregory Deye, Joseph P. Margetis, John Tolle
  • Publication number: 20200340138
    Abstract: Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.
    Type: Application
    Filed: April 15, 2020
    Publication date: October 29, 2020
    Inventors: John Tolle, Joseph P. Margetis