Abstract: A thermoelectric material that exhibits enhanced thermoelectric power, and thus an improvement in the thermoelectric figure of merit. Bismuth, as elemental bismuth, a bismuth alloy, a bismuth intermetallic compound, a mixture of these, or any of these including a dopant, is embedded in the pores of a host material having an average pore size in the range of about 5-15 nm. A method of making a composite thermoelectric material is also provided in which a porous host material is provided having an average pore size of about 5-15 nm, and a vapor of a bismuth-based material is caused to flow into the pores from a vapor inlet side of the host material to a vapor outlet side. The host material is then cooled from the vapor outlet side to progressively condense the vapor in the holes in the direction from the outlet side to the inlet side to progressively form nanowires of the bismuth-based material in the pores.

Abstract: A target wheel sensor assembly includes a target wheel, a magnet, and two or more sensing elements placed therebetween. The magnet and the sensing elements are configured so that as the target wheel rotates each of the sensing elements outputs a respective asymmetric signal relative to the direction of rotation of the target wheel or an object mechanically connected to the wheel. Each of these asymmetric signals is differentially combined with one another to determine the direction of motion of the target wheel, and, if optionally desired, the position of the target wheel.

Abstract: Composite galvanomagnetic devices having a desired combination of properties in specific temperature ranges and magnetic field ranges and so combined that desired properties are provided over an extended temperature and magnetic field range. In practice this can be accomplished with a single die with layers of different properties. Particularly, the present invention addresses this method as related to magnetoresitors and Hall plates.

Abstract: A magnetoresistor voltage divider includes a bottom layer disposed on a substrate. A middle layer is disposed on the bottom layer. A top layer is disposed on the middle layer. The bottom and top layer are resistive layers and the middle layer is an insulating layer. A common terminal is connected to the bottom layer and the top layer. A reference resistor terminal is connected to the bottom layer only. Moreover, a sensing MR terminal is connected to the top layer only. Accordingly, a sensing MR is established between the common terminal and the sensing MR terminal and a reference resistor is established between the common terminal and the reference resistor terminal. Thus, the sensing MR is stacked on top of the reference resistor.

Abstract: A magnetoresistor voltage divider includes a bottom layer disposed on a substrate. A middle layer is disposed on the bottom layer. A top layer is disposed on the middle layer. The bottom and top layer are resistive layers and the middle layer is an insulating layer. A common terminal is connected to the bottom layer and the top layer. A reference resistor terminal is connected to the bottom layer only. Moreover, a sensing MR terminal is connected to the top layer only. Accordingly, a sensing MR is established between the common terminal and the sensing MR terminal and a reference resistor is established between the common terminal and the reference resistor terminal. Thus, the sensing MR is stacked on top of the reference resistor.

Abstract: A thermoelectric material that exhibits enhanced thermoelectric power, and thus an improvement in the thermoelectric figure of merit. Bismuth, as elemental bismuth, a bismuth alloy, a bismuth intermetallic compound, a mixture of these, or any of these including a dopant, is embedded in the pores of a host material having an average pore size in the range of about 5-15 nm. A method of making a composite thermoelectric material is also provided in which a porous host material is provided having an average pore size of about 5-15 nm, and a vapor of a bismuth-based material is caused to flow into the pores from a vapor inlet side of the host material to a vapor outlet side. The host material is then cooled from the vapor outlet side to progressively condense the vapor in the holes in the direction from the outlet side to the inlet side to progressively form nanowires of the bismuth-based material in the pores.

Abstract: A circuit and method of providing desired response from magnetic field sensors to a predetermined magnetic function. Typically, magnetic field sensors, such as magnetoresistive devices and Hall effect sensors, provide an output which is a characteristic function of the magnetic field density, and so they do not generate a linear response in relation to any predetermined magnetic function, such as is required within numerous position or angle resolving circuits. The present invention utilizes two or more magnetically sensitive devices to tailor the overall sensor output signal to any desired function of the magnetic field density. The devices are connected in such a way that they mutually effect each other's voltages or currents to render the final desired output characteristic.

Abstract: Doping levels for a magnetoresistor material doped with n-type tellurium (Te) atoms for providing a temperature independent, single element magnetoresistor sensor. In a preferred form, the magnetoresistor material is an epitaxial thin film of indium antimonide (InSb), typically 1.5 micrometers thick, grown on a gallium arsenide (GaAs) substrate having a donor atom concentration between 2×1017 cm−3 and 10×1017 cm−3, wherein a magnetoresistor sensor (50) formed therefrom uses a background magnetic field (418, 420) of between about 0.1 Tesla to about 0.5 Tesla.

Abstract: An adaptive driver circuit which uses a modified conventional current mirror circuit to provide a current source employing an automatically adjustable current to compensate for decreased SMR device sensitivity at higher temperatures and large air gaps without the need for an active feedback circuit. The adaptive driver circuit according to the present invention is a unique modification of a current mirror circuit in that an SMR device is used as the reference resistor and a fixed resistor in the mirrored circuit to generate an output voltage. A modification is also possible whereby two adaptive driver circuits are used in a differential mode.

Abstract: A method is disclosed for forming an array of submicron-sized wires in a host body. In the method, the vapor of a metal, such as bismuth, is caused to flow upward through a horizontal refractory plate having many through holes, 200 nanometers or less in diameter, until all foreign material is excluded from the holes and then the plate is cooled from the top side to progressively and simultaneously condense said vapor to form said wires in the holes.

Abstract: A magnetic field sensor device is disclosed comprising two substantially identical n-doped, high carrier mobility semiconductor films (e.g., InSb films) each containing a pattern of cylindrical holes or antidots that cause the resistance of the respective films to vary depending upon the direction of the in-plane component of an applied magnetic field.