Abstract: A system for identifying a mark or other recess formed in a substrate and at least partially covered by at least one layer of opaque or visibly opaque material. The system includes a radiation source configured and positioned to direct incident electromagnetic radiation of at least one wavelength toward the substrate, a reflectometer positioned so as to receive electromagnetic radiation reflected from a location of the substrate, and at least one processor associated with the reflectometer for analyzing an intensity of electromagnetic radiation of each wavelength of radiation reflected from the substrate. The radiation source may direct incident radiation including a range of wavelengths toward a substrate.

Abstract: A method and apparatus is provided to identify material boundaries and assist in the alignment of pattern masks in semiconductor fabrication. The invention probes a layer step or feature edge of an individual wafer using spectroscopic reflectance to detect a change in the reflectance spectral response. In integrated circuit fabrication, a wafer is subjected to wafer fabrication processes to produce a number of individual layers on a semiconductor substrate. During processing a reflectometer, a light emitting and collecting device, emits a specific range of electromagnetic wavelengths which are reflected from the wafer surface. The intensity of the reflected light is monitored for changes which signify the detection of a feature edge. The use of a specific range of electromagnetic wavelengths with the reflectometer allows the apparatus to detect feature edges covered by visibly-opaque material.

Abstract: A method and apparatus is provided to identify material boundaries and assist in the alignment of pattern masks in semiconductor fabrication. The invention probes a layer step or feature edge of an individual wafer using spectroscopic reflectance to detect a change in the reflectance spectral response. In integrated circuit fabrication, a wafer is subjected to wafer fabrication processes to produce a number of individual layers on a semiconductor substrate. During processing a reflectometer, a light emitting and collecting device, emits a specific range of electromagnetic wavelengths which are reflected from the wafer surface. The intensity of the reflected light is monitored for changes which signify the detection of a feature edge. The use of a specific range of electromagnetic wavelengths with the reflectometer allows the apparatus to detect feature edges covered by visibly-opaque material.

Abstract: A method and apparatus is provided to identify material boundaries and assist in the alignment of pattern masks in semiconductor fabrication. The invention probes a layer step or feature edge of an individual wafer using spectroscopic reflectance to detect a change in the reflectance spectral response. In integrated circuit fabrication, a wafer is subjected to wafer fabrication processes to produce a number of individual layers on a semiconductor substrate. During processing a reflectometer, a light emitting and collecting device, emits a specific range of electromagnetic wavelengths which are reflected from the wafer surface. The intensity of the reflected light is monitored for changes which signify the detection of a feature edge. The use of a specific range of electromagnetic wavelengths with the reflectometer allows the apparatus to detect feature edges covered by visibly-opaque material.

Abstract: A method and apparatus is provided to identify material boundaries and assist in the alignment of pattern masks in semiconductor fabrication. The invention probes a layer step or feature edge of an individual wafer using spectroscopic reflectance to detect a change in the reflectance spectral response. In integrated circuit fabrication, a wafer is subjected to wafer fabrication processes to produce a number of individual layers on a semiconductor substrate. During processing a reflectometer, a light emitting and collecting device, emits a specific range of electromagnetic wavelengths which are reflected from the wafer surface. The intensity of the reflected light is monitored for changes which signify the detection of a feature edge. The use of a specific range of electromagnetic wavelengths with the reflectometer allows the apparatus to detect feature edges covered by visibly-opaque material.

Abstract: A method and apparatus is provided to identify material boundaries and assist in the alignment of pattern masks in semiconductor fabrication. The invention probes a layer step or feature edge of an individual wafer using spectroscopic reflectance to detect a change in the reflectance spectral response. In integrated circuit fabrication, a wafer is subjected to wafer fabrication processes to produce a number of individual layers on a semiconductor substrate. During processing a reflectometer, a light emitting and collecting device, emits a specific range of electromagnetic wavelengths which are reflected from the wafer surface. The intensity of the reflected light is monitored for changes which signify the detection of a feature edge. The use of a specific range of electromagnetic wavelengths with the reflectometer allows the apparatus to detect feature edges covered by visibly-opaque material.