Abstract: An electromechanical sensor is provided which comprises: first semiconductor wafer including a first stop surface residing in a first shallow recessed region of the first wafer; a second semiconductor wafer; wherein the first and second semiconductor wafers are laminated together such that the first recessed region of the first wafer and the second wafer define a first chamber in which the first stop surface and the second wafer are disposed close enough together such that the first stop surface restrains the second wafer from deflecting beyond the first stop surface; and an apparatus for measuring deflection of the second wafer.

Abstract: An electromechanical sensor is provided which comprises: a first silicon wafer which defines a resonant element; wherein the resonant element is doped with approximately the same impurity concentration as a background dopant concentration of the first wafer; and a second single crystal wafer which defines a device for coupling mechanical stress from the second wafer to the resonant element; wherein the first and second wafers are fusion bonded together.

Abstract: A pressure measurement apparatus is provided which comprises: a housing formed from a thermoplastic material and defining a chamber, the housing including an upper wall region and a lower wall region and first and second opposed side-wall regions disposed between the upper and lower wall regions, the upper wall region including first and second vent ports formed therein; a semiconductor pressure transducer mounted within the chamber, the pressure transducer including a first surface in communication with the first vent port and including a second surface in communication with the second vent port; at least one first pin terminal extending through the first side-wall region, the at least one first pin terminal including a short segment within the chamber and an elongated segment outside the chamber; and at least one second pin terminal extending through the second side-wall region, the at least one second pin terminal including a short segment within the chamber and an elongated segment outside the chamber.

Abstract: A transducer housing consists of a first and a second section. The first section contains an internal hollow into which a transistor header is mounted. The header, as mounted in the first section, is firmly secured within the section by means of a locking ring or other arrangement. Located in the internal hollow of the first section is a printed circuit board which has a plurality of apertures on the surface thereof each of which communicates with an extending tubular post on the opposite surface. Leads from the header are directed through the apertures in the printed circuit board and extend into the tubular posts. The second housing section is emplaced on the first section and contains a series of hollow metal tubular connectors or posts.

Abstract: A pressure transducer employs a tubular glass structure of a "D" shaped cross section, with the arcuate section of the "D" shaped configuration being substantially thicker than the base section. A sensor array is positioned on the underside of the base section while a pressure conducting fluid is directed through the tubular member to provide deflection of the base to cause the sensor array to provide an output indicative of pressure variations in the fluid medium. The sensor array as positioned on the underside of the base is both electrically and mechanically isolated from the pressure conducting medium.

Abstract: A hybrid transducer employing a ceramic substrate having on a surface a suitable geometry for defining an active or clamped area, a semiconductor strain gage is positioned on said substrate within said active area and connections are made to said gage by conductors printed on said substrate by thick or thin film techniques. Thick film printing techniques or thin film deposition techniques are employed to print the conductors, terminal areas, compensating resistors and stop members.

Abstract: A dielectrically isolated pressure transducer comprises a silicon diaphragm having on a surface thereof at least one piezoresistive sensor mounted in close proximity with a dielectric insulator, the diaphragm is secured about a non-active peripheral area to an annular ring housing by a glass bond fabricated from a glass material having a low melting temperature when compared to ordinary glass.