Abstract: Embodiments of the present invention relate to the analysis of the components of one or more gases, for example a gas mixture sampled from a semiconductor manufacturing process such as plasma etching or plasma enhanced chemical vapor deposition (PECVD). Particular embodiments provide sufficient power to a plasma of the sample, to dissociate a large number of the molecules and molecular fragments into individual atoms. With sufficient power (typically a power density of between 3-40 W/cm3) delivered into the plasma, most of the emission peaks result from emission of individual atoms, thereby creating spectra conducive to simplifying the identification of the chemical composition of the gases under investigation. Such accurate identification of components of the gas may allow for the precise determination of the stage of the process being performed, and in particular for detection of process endpoint.

Abstract: An in-situ gas flow measurement controller measures the temperature and rate of pressure drop upstream from a flow control device (FCD). The controller samples the pressure and temperature data and applies the equivalent of a decimating filter to the data to produce filtered data at a slower sampling rate. The controller derives timestamps by counting ticks from the sampling clock of the A/D converter that is sampling the pressure at regular intervals to ensure the timestamps associated with the pressure samples are accurate and do not contain jitter that is associated with software clocks. The controller additionally normalizes the temperature reading to account for power supply fluctuations, filters out noise from the pressure and temperature readings, and excludes data during periods of instability. It calculates the gas flow rate accounting for possible non-linearities in the pressure measurements, and provides the computed gas flow measurement via one of many possible interfaces.

Abstract: An in-situ gas flow measurement controller measures the temperature and rate of pressure drop upstream from a flow control device (FCD). The controller samples the pressure and temperature data and applies the equivalent of a decimating filter to the data to produce filtered data at a slower sampling rate. The controller derives timestamps by counting ticks from the sampling clock of the A/D converter that is sampling the pressure at regular intervals to ensure the timestamps associated with the pressure samples are accurate and do not contain jitter that is associated with software clocks. The controller additionally normalizes the temperature reading to account for power supply fluctuations, filters out noise from the pressure and temperature readings, and excludes data during periods of instability. It calculates the gas flow rate accounting for possible non-linearities in the pressure measurements, and provides the computed gas flow measurement via one of many possible interfaces.

Abstract: An in-situ gas flow measurement controller measures the temperature and rate of pressure drop upstream from a flow control device (FCD). The controller samples the pressure and temperature data and applies the equivalent of a decimating filter to the data to produce filtered data at a slower sampling rate. The controller derives timestamps by counting ticks from the sampling clock of the A/D converter that is sampling the pressure at regular intervals to ensure the timestamps associated with the pressure samples are accurate and do not contain jitter that is associated with software clocks. The controller additionally normalizes the temperature reading to account for power supply fluctuations, filters out noise from the pressure and temperature readings, and excludes data during periods of instability. It calculates the gas flow rate accounting for possible non-linearities in the pressure measurements, and provides the computed gas flow measurement via one of many possible interfaces.

Abstract: A method and apparatus for self-calibrating control of gas flow. The gas flow rate is initially set by controlling, to a high degree of precision, the amount of opening of a flow restriction, where the design of the apparatus containing the flow restriction lends itself to achieving high precision. The gas flow rate is then measured by a pressure rate-of-drop upstream of the flow restriction, and the amount of flow restriction opening is adjusted, if need be, to obtain exactly the desired flow.

Abstract: Embodiments of the present invention relate to the analysis of the components of one or more gases, for example a gas mixture sampled from a semiconductor manufacturing process such as plasma etching or plasma enhanced chemical vapor deposition (PECVD). Particular embodiments provide sufficient power to a plasma of the sample, to dissociate a large number of the molecules and molecular fragments into individual atoms. With sufficient power (typically a power density of between 3-40 W/cm3) delivered into the plasma, most of the emission peaks result from emission of individual atoms, thereby creating spectra conducive to simplifying the identification of the chemical composition of the gases under investigation. Such accurate identification of components of the gas may allow for the precise determination of the stage of the process being performed, and in particular for detection of process endpoint.

Abstract: Methods and apparatus utilize a rate of drop in pressure upstream of a gas flow controller (GFC) to accurately measure a rate of flow through the GFC. Measurement of the gas flow through the many gas flow controllers in production use today is enabled, without requiring any special or sophisticated pressure regulators or other special components. Various provisions ensure that none of the changes in pressure that occur during or after the measurement perturb the constant flow of gas through the GFC under test.

Abstract: Methods and apparatus utilize a rate of drop in pressure upstream of a gas flow controller (GFC) to accurately measure a rate of flow through the GFC. Measurement of the gas flow through the many gas flow controllers in production use today is enabled, without requiring any special or sophisticated pressure regulators or other special components. Various provisions ensure that none of the changes in pressure that occur during or after the measurement perturb the constant flow of gas through the GFC under test.

Abstract: An embodiment of a method in accordance with the present invention to determine the flow rate of a second gas relative to a first gas, comprises, setting a flow of a first gas to a known level, taking a first measurement of the first gas with a measurement technique sensitive to a concentration of the first gas, and establishing a flow of a second gas mixed with the first gas. A second measurement of the first gas is taken with a measurement technique that is sensitive to the concentration of the first gas, and the flow of the second gas is determined by a calculation involving a difference between the first measurement and the second measurement. In alternative embodiments, the first measurement may be taken of a flow of two or more gases combined, with the second measurement taken with one of the gases removed from the mixture. Certain embodiments of methods of the present invention may be employed in sequence in order to determine flow rates of more than two gases.

Abstract: Method and system for detecting endpoint for a plasma etch process are provided. In accordance with one embodiment, the method provides a semiconductor substrate having a film to be processed thereon. The film is processed in a plasma environment during a time period to provide for device structures. Information associated with the plasma process is collected. The information is characterized by a first signal intensity. Information on a change in the first signal intensity is extracted. The change in the first signal intensity has a second signal intensity. The change in signal intensity at the second signal intensity is associated to an endpoint of processing the film in the plasma environment. The second signal intensity may be about 0.25% and less of the first signal intensity.

Abstract: Embodiments of the present invention employ measurement of argon as the means to detect the presence of an atmospheric leak in a processing chamber. Argon detected inside the process chamber is conclusive evidence of a leak. Furthermore, the amount of detected argon provides information on the rate of air entering through the leak. In one embodiment, leak detection takes place in the main plasma inside the processing chamber. In another embodiment, leak detection takes place in the self-contained plasma generated in a remote plasma sensor. Additional measurements can be performed, such as measuring the amount of oxygen, and/or the presence of moisture to help in detecting and quantifying outgassing from the processing chamber.

Abstract: Methods and apparatus utilize a rate of drop in pressure upstream of a gas flow controller (GFC) to accurately measure a rate of flow through the GFC. Measurement of the gas flow through the many gas flow controllers in production use today is enabled, without requiring any special or sophisticated pressure regulators or other special components. Various provisions ensure that none of the changes in pressure that occur during or after the measurement perturb the constant flow of gas through the GFC under test.

Abstract: Methods and apparatus utilize a rate of drop in pressure upstream of a gas flow controller (GFC) to accurately measure a rate of flow through the GFC. Measurement of the gas flow through the many gas flow controllers in production use today is enabled, without requiring any special or sophisticated pressure regulators or other special components. Various provisions ensure that none of the changes in pressure that occur during or after the measurement perturb the constant flow of gas through the GFC under test.

Abstract: Embodiments of the present invention relate to the analysis of the components of one or more gases, for example a gas mixture sampled from a semiconductor manufacturing process such as plasma etching or plasma enhanced chemical vapor deposition (PECVD). Particular embodiments provide sufficient power to a plasma of the sample, to dissociate a large number of the molecules and molecular fragments into individual atoms. With sufficient power (typically a power density of between 3-40 W/cm3) delivered into the plasma, most of the emission peaks result from emission of individual atoms, thereby creating spectra conducive to simplifying the identification of the chemical composition of the gases under investigation. Such accurate identification of components of the gas may allow for the precise determination of the stage of the process being performed, and in particular for detection of process endpoint.

Abstract: A method of manufacturing a thermoelectric module is provided. A first electrically conductive pattern is defined on a first substrate and a second electrically conductive pattern is defined on a second substrate. Alternating bars of a first thermoelectric material and a second thermoelectric material are arranged parallel to each other. The bars are fixed into place on the first conductive pattern by an effective thermal and electrical connection with the conductive pattern. One such connection means is soldering. Then the bars are separated into elements. The second substrate is positioned over the elements and fixed to the elements to complete the manufacture of the TEM.

Abstract: An improved thermoelectric module is described. A first electrically conductive pattern is defined on a first substrate and a second electrically conductive pattern is defined on a second substrate. Alternating bars of a first thermoelectric material and a second thermoelectric material are arranged parallel to each other. The bars are fixed into place on the first conductive pattern by an effective thermal and electrical connection with the conductive pattern. One such connection means is soldering. Then the bars are separated into elements. The second substrate is positioned over the elements and fixed to the elements to complete the manufacture of the TEM.

Abstract: A method of manufacturing a thermoelectric module is provided. A first electrically conductive pattern is defined on a first substrate and a second electrically conductive pattern is defined on a second substrate. Alternating bars of a first thermoelectric material and a second thermoelectric material are arranged parallel to each other. The bars are fixed into place on the first conductive pattern by an effective thermal and electrical connection with the conductive pattern. One such connection means is soldering. Then the bars are separated into elements. The second substrate is positioned over the elements and fixed to the elements to complete the manufacture of the TEM.

Abstract: A glass deposition viscoelastic flow process for forming planar and semi-planar insulator structures on semiconductor devices, which comprises feeding vaporized reactants into a reaction chamber at a reaction temperature between 750.degree.-950.degree. C. and subjecting the surface of the semiconductor devices to a high reactant velocity. The high reactant velocity allows the formation of a high quality, uniform glass layer at temperatures compatible with the fusion temperature, so that deposition occurs simultaneously with the viscoelastic flow of the glass. The simultaneous deposition and flow provides for topographical planarization substantially free of voids and other layer inconsistencies.

Abstract: A CVD process for the deposition of at least one layer of material on a wafer substrate is disclosed, which comprises the steps of : (a) positioning at least one wafer substrate horizontally within a generally circular wafer deposition zone; (b) passing a reactive gas radially through the zone and across the surface of the wafer substrate in a single pass and preventing the recirculation of any reactive gas or gaseous reaction products over any wafer substrate or through any part of the reaction chamber which affects the wafer substrate; (c) heating the wafer substrate to a point at which the desired deposition material will be formed from the reactive gas by reaction on the surface of the heated wafer substrate and will subsequently bond with the surface; and (d) causing the deposition of material on the surface to be substantially uniform by maintaining the radial flow of the gas at a flow rate to produce a predetermined residence time of the gas over each such wafer substrate sufficiently short to prevent

Abstract: A chemical vapor deposition (CVD) recstor is described which comprises an annular reaction zone with means for one or more reactive gases to be passed in single pass radial flow in which there is little lateral diffusion, means for preventing recirculation of reactive gases or reaction products from occurring at any point in the reaction chamber, and means in the reaction chamber for maintaining a laminar gas flow. rotational means permit the wafer support plates and wafers to be rotated around the central axis of the reaction zone and different gases may be passed over the wafers at different points in the reaction zone such that two or more materials can be deposited on the wafers during a single reactor run.Rotation through alternating deposition zones can also be done repeatedly such that a series of alternating layers of two different deposited materials is built up.