Patents by Inventor Joseph Shimon Friedman

Joseph Shimon Friedman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for computing with complementary networks of magnetic tunnel junctions
    Patent number: 9711200
    Abstract: A magnetic tunnel junction (MTJ) device is provided that includes a MTJ element and a control wire. The MTJ element includes a top ferromagnet layer formed of a first magnetic material, a tunneling layer, and a bottom ferromagnet layer formed of a second magnetic material. The tunneling layer is mounted between the top ferromagnet layer and the bottom ferromagnet layer. The control wire is configured to conduct a charge pulse. A direction of charge flow in the control wire extends substantially perpendicular to a magnetization direction of the top ferromagnet layer. The control wire is positioned sufficiently close to the top ferromagnet layer to reverse the magnetization direction of the top ferromagnet layer when the charge pulse flows therethrough while not reversing the magnetization direction of the bottom ferromagnet layer when the charge pulse flows therethrough.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: July 18, 2017
    Assignee: Northwestern University
    Inventors: Joseph Shimon Friedman, Alan V. Sahakian
  • METHOD FOR COMPUTING WITH COMPLEMENTARY NETWORKS OF MAGNETIC TUNNEL JUNCTIONS
    Publication number: 20160180907
    Abstract: A magnetic tunnel junction (MTJ) device is provided that includes a MTJ element and a control wire. The MTJ element includes a top ferromagnet layer formed of a first magnetic material, a tunneling layer, and a bottom ferromagnet layer formed of a second magnetic material. The tunneling layer is mounted between the top ferromagnet layer and the bottom ferromagnet layer. The control wire is configured to conduct a charge pulse. A direction of charge flow in the control wire extends substantially perpendicular to a magnetization direction of the top ferromagnet layer. The control wire is positioned sufficiently close to the top ferromagnet layer to reverse the magnetization direction of the top ferromagnet layer when the charge pulse flows therethrough while not reversing the magnetization direction of the bottom ferromagnet layer when the charge pulse flows therethrough.
    Type: Application
    Filed: February 26, 2016
    Publication date: June 23, 2016
    Inventors: Joseph Shimon Friedman, Alan V. Sahakian
  • Magnetic tunnel junctions with control wire
    Patent number: 9299917
    Abstract: A magnetic tunnel junction (MTJ) device is provided that includes a MTJ element and a control wire. The MTJ element includes a top ferromagnet layer formed of a first magnetic material, a tunneling layer, and a bottom ferromagnet layer formed of a second magnetic material. The tunneling layer is mounted between the top ferromagnet layer and the bottom ferromagnet layer. The control wire is configured to conduct a charge pulse. A direction of charge flow in the control wire extends substantially perpendicular to a magnetization direction of the top ferromagnet layer. The control wire is positioned sufficiently close to the top ferromagnet layer to reverse the magnetization direction of the top ferromagnet layer when the charge pulse flows therethrough while not reversing the magnetization direction of the bottom ferromagnet layer when the charge pulse flows therethrough.
    Type: Grant
    Filed: September 24, 2014
    Date of Patent: March 29, 2016
    Assignee: Northwestern University
    Inventors: Joseph Shimon Friedman, Alan V. Sahakian
  • MAGNETIC TUNNEL JUNCTIONS WITH CONTROL WIRE
    Publication number: 20150091111
    Abstract: A magnetic tunnel junction (MTJ) device is provided that includes a MTJ element and a control wire. The MTJ element includes a top ferromagnet layer formed of a first magnetic material, a tunneling layer, and a bottom ferromagnet layer formed of a second magnetic material. The tunneling layer is mounted between the top ferromagnet layer and the bottom ferromagnet layer. The control wire is configured to conduct a charge pulse. A direction of charge flow in the control wire extends substantially perpendicular to a magnetization direction of the top ferromagnet layer. The control wire is positioned sufficiently close to the top ferromagnet layer to reverse the magnetization direction of the top ferromagnet layer when the charge pulse flows therethrough while not reversing the magnetization direction of the bottom ferromagnet layer when the charge pulse flows therethrough.
    Type: Application
    Filed: September 24, 2014
    Publication date: April 2, 2015
    Inventors: Joseph Shimon Friedman, Alan V. Sahakian