Patents by Inventor Joseph Shovlin

Joseph Shovlin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Rugged semiconductor device architecture
    Patent number: 8124981
    Abstract: A wide bandgap silicon carbide device has an avalanche control structure formed in an epitaxial layer of a first conductivity type above a substrate that is connected to a first electrode of the device. A first region of a second conductivity type is in the upper surface of the epitaxial layer with a connection to a second electrode of the device. A second region of the first conductivity type lies below the first region and has a dopant concentration greater than the dopant concentration in the epitaxial layer.
    Type: Grant
    Filed: June 10, 2008
    Date of Patent: February 28, 2012
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Christopher L. Rexer, Gary M. Dolny, Richard L. Woodin, Carl Anthony Witt, Joseph Shovlin
  • RUGGED SEMICONDUCTOR DEVICE ARCHITECTURE
    Publication number: 20090302327
    Abstract: A wide bandgap silicon carbide device has an avalanche control structure formed in an epitaxial layer of a first conductivity type above a substrate that is connected to a first electrode of the device. A first region of a second conductivity type is in the upper surface of the epitaxial layer with a connection to a second electrode of the device. A second region of the first conductivity type lies below the first region and has a dopant concentration greater than the dopant concentration in the epitaxial layer.
    Type: Application
    Filed: June 10, 2008
    Publication date: December 10, 2009
    Inventors: Christopher L. Rexer, Gary M. Dolny, Richard L. Woodin, Carl Anthony Witt, Joseph Shovlin