Abstract: A polishing pad suitable for chemical mechanical polishing comprising: a polishing layer having a top surface having a groove pattern, the groove pattern comprises a plurality of first grooves having a first groove cross-section, the plurality of first grooves defining a plurality of regions between adjacent first grooves; and, in a portion of the plurality of region between adjacent first grooves, a plurality of second grooves having a second groove cross-section, wherein the second groove cross-section is less than 50 percent of the first groove cross-section, wherein the polishing layer is further characterized by having a specific gravity of at least 1.05 grams per cubic centimeter.

Abstract: A polishing pad having a window extending through the polishing pad from the polishing surface to a backside surface of the pad. The window includes a top window material separated from a polishing material, a bottom window wherein the bottom window material is elastomeric and can deform into a void space adjacent to the bottom window material when the pad is under pressure during polishing. A seal between the subpad material and the top window material and/or bottom window material or a seal between the polishing layer and the bottom window material prevents particles or liquid used in the chemical mechanical polishing from passing from above the polishing layer to below the subpad layer. The pad can be used for polishing with either optical or vibrational end-point detection.

Abstract: A polishing pad for chemical mechanical polishing includes a top window material, which is transparent to light, which forms a seal with polishing material, with subpad material, or both; a bottom window material, having a void space inward from a peripheral surface if the bottom window material. The void space is aligned to allow light passing through the top window portion to and the void space enabling optical end-point detection. Vibrational signals can be transmitted through the top window material or the polishing material and through the bottom window material enabling acoustic end-point detection.

Abstract: A polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates comprises: a polishing layer including a polyurea having a soft phase and a hard phase, the soft phase being a copolymer of aliphatic fluorine-free species and a fluorinated aliphatic species, the polyurea being cured with a curing agent where the hard phase comprises crystallinity where the polyurea is characterized by a melting point of at least 230° C.

Abstract: A polishing pad suitable for chemical mechanical polishing comprising: a polishing layer having a top surface having a groove pattern, the groove pattern comprises a plurality of first grooves having a first groove cross-section, the plurality of first grooves defining a plurality of regions between adjacent first grooves; and, in a portion of the plurality of region between adjacent first grooves, a plurality of second grooves having a second groove cross-section, wherein the second groove cross-section is less than 50 percent of the first groove cross-section, wherein the polishing layer is further characterized by having a specific gravity of at least 1.05 grams per cubic centimeter.

Abstract: The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The polishing pad includes a polyurea polishing layer and a polyurea matrix. The polyurea matrix has a soft phase and a hard phase. The soft phase is formed from soft segments and the hard phase is formed from diisocyanate hard segments and a curative agent. The soft segment areva copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix is cured with the curative agent and includes gas or liquid-filled polymeric microelements. The soft segments form a fluorine rich phase that concentrates adjacent the polymeric microelements and at the polishing layer during polishing. The polishing layer remains hydrophilic during polishing in shear conditions.

Abstract: A polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates comprises: a polishing layer including a polyurea having a soft phase and a hard phase, the soft phase being a copolymer of aliphatic fluorine-free species and a fluorinated aliphatic species, the polyurea being cured with a curing agent where the hard phase comprises crystallinity where the polyurea is characterized by a melting point of at least 230° C.

Abstract: The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface for polishing or planarizing the substrate; a polymeric matrix forming the polishing layer and including gas-filled or liquid-filled polymeric microelements; and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a tensile strength lower than the tensile strength of the polymeric matrix wherein diamond abrasive materials cut the fluoropolymer to form a reduced number of pad debris particles in the 1 ?m to 10 ?m size range.

Abstract: The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The pad includes a polyurea-containing polishing layer having a polyurea-containing matrix. The polyurea-containing matrix includes a soft phase formed from two or more aliphatic fluorine-free polymer groups capping two ends of at least one aliphatic fluorinated polymer group. The polyurea-containing matrix also includes a hard phase that contains a urea group formed from isocyanate group capping outer ends of the aliphatic fluorine-free polymer groups reacted with an amine-containing curative agent. Biuret crosslinking groups connect some of the soft segments to hard segments. The polishing layer is hydrophilic during polishing in shear conditions.

Abstract: The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The polishing pad includes a polyurea polishing layer and a polyurea matrix. The polyurea matrix has a soft phase and a hard phase. The soft phase is formed from soft segments and the hard phase is formed from diisocyanate hard segments and a curative agent. The soft segment areva copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix is cured with the curative agent and includes gas or liquid-filled polymeric microelements. The soft segments form a fluorine rich phase that concentrates adjacent the polymeric microelements and at the polishing layer during polishing. The polishing layer remains hydrophilic during polishing in shear conditions.

Abstract: The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. It includes a polyurea polishing layer and a polyurea matrix. The polyurea has a soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements. The polyurea matrix has a bulk region and a transition region adjacent the bulk region that extends to the polishing layer. The polymeric microelements in the transition region decrease in thickness as they approach the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of a diameter of the polymeric microelements in the bulk region. The polishing layer remains hydrophilic during polishing in shear conditions.

Abstract: The invention provides a polishing pad suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polishing layer having a polymeric matrix, a thickness and a polishing track representing a working region of the polishing layer for polishing or planarizing. Radial drainage grooves extend through the polishing track facilitate polishing debris removal through the polishing track and underneath the at least one of semiconductor, optical and magnetic substrates and then beyond the polishing track toward the perimeter of the polishing pad during rotation of the polishing pad.

Abstract: The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface for polishing or planarizing the substrate; a polymeric matrix forming the polishing layer and including gas-filled or liquid-filled polymeric microelements; and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a tensile strength lower than the tensile strength of the polymeric matrix wherein diamond abrasive materials cut the fluoropolymer to form a reduced number of pad debris particles in the 1 ?m to 10 ?m size range.

Abstract: The invention provides a polishing pad suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polishing layer having a polymeric matrix, a thickness and a polishing track representing a working region of the polishing layer for polishing or planarizing. Radial drainage grooves extend through the polishing track facilitate polishing debris removal through the polishing track and underneath the at least one of semiconductor, optical and magnetic substrates and then beyond the polishing track toward the perimeter of the polishing pad during rotation of the polishing pad.

Abstract: A chemical mechanical polishing pad is provided having a polishing layer; an endpoint detection window; subpad; and, a stack adhesive; wherein the subpad includes plurality of apertures in optical communication with the endpoint detection window; and, wherein the polishing surface of the polishing layer is adapted for polishing of a substrate.

Abstract: A chemical mechanical polishing pad is provided having a polishing layer; an endpoint detection window; subpad; and, a stack adhesive; wherein the subpad includes plurality of apertures in optical communication with the endpoint detection window; and, wherein the polishing surface of the polishing layer is adapted for polishing of a substrate.

Abstract: The present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer blends of a first copolymer and a second copolymer and balance water.

Abstract: The present invention provides an aqueous composition useful for polishing nonferrous metal interconnects on a semiconductor wafer comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer of acrylic acid and methacrylic acid, and balance water, wherein the copolymer of acrylic acid and methacrylic acid has a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:30 to 30:1 and the copolymer has a molecular weight in the range of 1K to 1000K.

Abstract: The present invention provides an aqueous composition useful for polishing copper on a semiconductor wafer at a down force pressure of at least less than 20.68 kPa, comprising by weight percent 1 to 15 oxidizer, 0.1 to 1 inhibitor for a nonferrous metal, 0.05 to 3 complexing agent for the nonferrous metal, 0.01 to 5 carboxylic acid polymer, 0.01 to 5 modified cellulose, 0.05 to 10 phosphorus-containing compound and 0 to 10 abrasive, wherein the phosphorus-containing compound increases removal of the copper.

Abstract: The present invention provides an aqueous composition useful for polishing copper on a semiconductor wafer comprising by weight percent 0.001 to 6 inhibitor for a nonferrous metal, 0.05 to 10 complexing agent for the metal, 0.01 to 25 copper removal agent for accelerating the removal of the copper, 0.5 to 40 abrasive, 0 to 10 selected from the group comprising, polyvinylpyrrolidone, thermoplastic polymer and mixtures thereof, wherein the copper removal agent is imidazole.