Abstract: A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aperture, the extraction plate having a non-planar shape, and generating an extracted ion beam at a high angle of incidence with respect to a perpendicular to a plane of a substrate, when the plane of the substrate is arranged parallel to the side of the plasma chamber.

Abstract: A temperature stabilized amplifier is disclosed in the preferred and illustrated embodiment. This amplifier must perform in spite of extreme temperature fluctuations encountered in down hole tools. It must provide an output signal which is a large voltage swing input to a cable suspending the amplifier and other apparatus in a well bore. The apparatus utilizes complementary symmetry VMOS output transistors with a third VMOS transistor supported on a common heat sink with one of the two output transistors. The third transistor, in conjunction with an inverting amplifier, forms a bias which is applied to the output transistors in a manner such that temperature drift is cancelled. This, then, overcomes temperature drift. This extends the operating range of the equipment markedly.