Patents by Inventor Joseph Todd Hillman

Joseph Todd Hillman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
    Patent number: 6368987
    Abstract: A method and apparatus for depositing a film by chemical vapor deposition comprises a showerhead for dispersing reactant gases into the processing space wherein the showerhead has a first space therein operable for receiving and dispersing the first reacting gas, and has a second space therein, generally isolated from the first space, and operable for receiving and dispersing the second reactant gas separate from the first gas dispersion for maintaining segregation of reactant gases and generally preventing premature mixture of the gases prior to their introduction into the processing space to prevent premature deposition in the system.
    Type: Grant
    Filed: June 6, 2000
    Date of Patent: April 9, 2002
    Assignee: Tokyo Electron Limited
    Inventors: Stanislaw Kopacz, Douglas Arthur Webb, Gerrit Jan Leusink, Rene Emile LeBlanc, Michael S. Ameen, Joseph Todd Hillman, Robert F. Foster, Robert Clark Rowan, Jr.
  • Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
    Patent number: 6161500
    Abstract: A method and apparatus for depositing a film by chemical vapor deposition comprises a showerhead for dispersing reactant gases into the processing space wherein the showerhead has a first space therein operable for receiving and dispersing the first reacting gas, and has a second space therein, generally isolated from the first space, and operable for receiving and dispersing the second reactant gas separate from the first gas dispersion for maintaining segregation of reactant gases and generally preventing premature mixture of the gases prior to their introduction into the processing space to prevent premature deposition in the system.
    Type: Grant
    Filed: September 30, 1997
    Date of Patent: December 19, 2000
    Assignee: Tokyo Electron Limited
    Inventors: Stanislaw Kopacz, Douglas Arthur Webb, Gerrit Jan Leusink, Rene Emile LeBlanc, Michael S. Ameen, Joseph Todd Hillman, Robert F. Foster, Robert Clark Rowan, Jr.