Patents by Inventor Joseph V. Abernathy

Joseph V. Abernathy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4872938
    Abstract: A process module which is compatible with a system using vacuum wafer transport in which wafers are generally transported and processed in a face down position under vacuum, and which also includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. In the more nearly vertical position, the wafer can be processed by a top process module, which may be, e.g., a sputter system, an implanter, or an inspection module. Another process module is included in the bottom part of the chamber, so that the wafer can be processed by the lower process module while in its substantially horizontal position and processed by the upper process module when it is in its more nearly vertical position. This is especially advantageous when the lower process module is a plasma cleanup module and the top module is a deposition module.
    Type: Grant
    Filed: April 25, 1988
    Date of Patent: October 10, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Cecil J. Davis, Joseph V. Abernathy, Robert T. Matthews, Randall C. Hildenbrand, Bruce Simpson, John I. Jones, Lee M. Loewenstein, James G. Bohlman
  • Patent number: 4836905
    Abstract: A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely transferred and processed in the face down position. This includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. While the wafer is in the more nearly vertical position, sputter deposition may be performed. In situ or remote plasma capability is usefully provided in the bottom part of the chamber, so that a dry deglaze or cleanup step can be performed while the wafer is in its substantially horizontal position, followed by a sputter deposition after the wafer has been moved to its more nearly vertical position.
    Type: Grant
    Filed: July 16, 1987
    Date of Patent: June 6, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Cecil J. Davis, Joseph V. Abernathy, Robert T. Matthews, Randall C. Hildenbrand, Bruce Simpson, James G. Bohlman, Lee M. Loewenstein, John I. Jones