Abstract: A method for manufacturing variable capacitance pressure transducers and an intermediate article of manufacture produced in the practice of this method. In the method, a wafer of doped silicion or other semiconductor material has portions of the semiconductor material removed from spaced areas to form a plurality of recesses in the surface of the semiconductor material. The material is doped to enhance its electrical conductivity. A dielectric material has one of its surfaces coated with spaced areas of electrically conductive material. The semiconductor material is attached to the coated surface of the dielectric material such that the surface recesses in the semiconductor material are in alignment with the conductive areas on the dielectric material. This produces a plurality of electrical capacitors suitable for use as pressure transducers.

Abstract: A capacitive pressure transducer assembly having a semiconductor transducer device, a substrate, and a cover for use in conducting a fluid pressure to be sensed to the exterior surfaces of the transducer device. The transducer device may have a glass, silicon or other nonconductive material as a base on which a metal capacitor plate is formed. The other capacitor plate may be formed of doped silicon or other semiconductor material. Also, the substrate on which the transducer device is mounted may have additional and related circuitry implemented in thick film technology (ceramic substrate) or integrated circuit technology (semiconductor substrate).

Abstract: A method for manufacturing variable capacitance pressure transducers and an intermediate article of manufacture produced in the practice of this method. In the method, a wafer or doped silicon or other semiconductor material has portions of the semiconductor material removed from spaced areas to form a plurality of recesses in the surface of the semiconductor material. The material is doped to enhance its electrical conductivity. A dielectric material has one of its surfaces coated with spaces areas of electrically conductive material. The semiconductor material is attached to the coated surface of the dielectric material such that the surface recesses in the semiconductor material are in alignment with the conductive areas on the dielectric material. This produces a plurality of electrical capacitors suitable for use as pressure transducers.