Patents by Inventor Joseph W Kolis

Joseph W Kolis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10156025
    Abstract: Heterogeneous monolithic crystals that can include multiple regimes in a complex geometry are described. The crystals can be advantageously utilized in laser applications. The heterogeneous crystals can be created through growth of different regimes in interior voids formed in a seed crystal, which can in turn be homogeneous or heterogeneous. In one particular embodiment, a regime can be grown within a void of a seed crystal by use of a hydrothermal growth process. Formed crystals can be utilized in lasing and waveguiding applications, among others.
    Type: Grant
    Filed: May 4, 2016
    Date of Patent: December 18, 2018
    Assignee: University of South Carolina
    Inventors: Joseph W. Kolis, Colin D. McMillen
  • Patent number: 9506166
    Abstract: Disclosed are heterogeneous crystals for use in a laser cavity and methods of forming the crystals. A crystal can be a monolithic crystal containing a garnet-based activator region and a garnet-based Q-switch. Disclosed methods include hydrothermal growth techniques for the growth of differing epitaxial layers on a host. A YAG host material can be doped in one region with a suitable activator ion for lasing and can be formed with another region that is doped with a saturable absorber to form the Q-switch. Regions can be formed with controlled thickness in conjunction. Following formation, a heterogeneous crystal can be cut, polished and coated with mirror films at each end for use in a laser cavity to provide short pulses of high power emissions using high frequency pulse modes.
    Type: Grant
    Filed: July 16, 2014
    Date of Patent: November 29, 2016
    Assignee: Clemson University Research Foundation
    Inventors: Joseph W. Kolis, Colin D. McMillen, J. Matthew Mann
  • Patent number: 9493887
    Abstract: Disclosed are heterogeneous crystals for use in a laser cavity and methods of forming the crystals. A crystal can be a monolithic crystal containing a vanadate-based activator region and a vanadate-based Q-switch. Disclosed methods include hydrothermal growth techniques for the growth of differing layers on a host. A YVO4 host material can be doped in one region with a suitable active lasing ion and can be formed with another region that is doped with a saturable absorber. Regions can be formed with controlled thickness. Following formation, a heterogeneous crystal can be cut, polished and coated with mirror films at each end for use in a laser cavity to provide short pulses of high power emissions using high frequency pulse modes.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: November 15, 2016
    Assignee: Clemson University Research Foundation
    Inventors: Joseph W. Kolis, Colin D. McMillen, J. Matthew Mann
  • Publication number: 20160326666
    Abstract: Disclosed are heterogeneous crystals for use in a laser cavity and methods of forming the crystals. A crystal can be a monolithic crystal containing a garnet-based activator region and a garnet-based Q-switch. Disclosed methods include hydrothermal growth techniques for the growth of differing epitaxial layers on a host. A YAG host material can be doped in one region with a suitable activator ion for lasing and can be formed with another region that is doped with a saturable absorber to form the Q-switch. Regions can be formed with controlled thickness in conjunction. Following formation, a heterogeneous crystal can be cut, polished and coated with mirror films at each end for use in a laser cavity to provide short pulses of high power emissions using high frequency pulse modes.
    Type: Application
    Filed: July 16, 2014
    Publication date: November 10, 2016
    Inventors: Joseph W. Kolis, Colin D. McMillen, J. Matthew Mann
  • Publication number: 20160326667
    Abstract: Heterogeneous monolithic crystals that can include multiple regimes in a complex geometry are described. The crystals can be advantageously utilized in laser applications. The heterogeneous crystals can be created through growth of different regimes in interior voids formed in a seed crystal, which can in turn be homogeneous or heterogeneous. In one particular embodiment, a regime can be grown within a void of a seed crystal by use of a hydrothermal growth process. Formed crystals can be utilized in lasing and waveguiding applications, among others.
    Type: Application
    Filed: May 4, 2016
    Publication date: November 10, 2016
    Inventors: Joseph W. Kolis, Colin D. McMillen
  • Patent number: 9014228
    Abstract: Disclosed are heterogeneous crystals for use in a laser cavity and methods of forming the crystals. A crystal can be a monolithic crystal containing regions that are based upon the same host material but differ from one another according to some material feature such that they can perform various functions related to lasing. Disclosed methods include hydrothermal growth techniques for the growth of differing epitaxial layers on a host. A host material can be doped in one region with a suitable active lasing ion and can be formed with another region that is undoped and can act as an endcap, a waveguide cladding layer, or a substrate to provide strength and/or contact to a heat sink. Regions can be formed with controlled thickness in conjunction. Following formation, a heterogeneous crystal can be cut, polished and coated with mirror films at each end for use in a laser cavity.
    Type: Grant
    Filed: July 8, 2010
    Date of Patent: April 21, 2015
    Assignee: Clemson University Research Foundation
    Inventors: Joseph W. Kolis, Colin D. McMillen, J. Matthew Mann, John M. Ballato
  • Patent number: 8834629
    Abstract: Single, acentric, rhombohedral, fluoroberyllium borate crystals of a size sufficient for use in a variety of laser and non-optical applications are formed by a hydrothermal method.
    Type: Grant
    Filed: March 1, 2010
    Date of Patent: September 16, 2014
    Assignee: Clemson University
    Inventors: Joseph W Kolis, Colin D. McMillen
  • Publication number: 20100189619
    Abstract: Single, acentric, rhombohedral, fluoroberyllium borate crystals of a size sufficient for use in a variety of laser and non-optical applications are formed by a hydrothermal method.
    Type: Application
    Filed: March 1, 2010
    Publication date: July 29, 2010
    Inventors: Joseph W. Kolis, Colin D. McMillen
  • Patent number: 7731795
    Abstract: Single, acentric, rhombohedral, fluoroberyllium borate crystals of a size sufficient for use in a variety of laser and non-optical applications are formed by a hydrothermal method.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: June 8, 2010
    Assignee: Clemson University
    Inventors: Joseph W Kolis, Colin D. McMillen
  • Patent number: 7591896
    Abstract: Single, acentric, hexagonal, beryllium borate crystals having the formula Sr2Be2B2O7 and of a size sufficient for use in a variety of laser and non-optical applications are formed by a hydrothermal method. Alternate structures are formed by partially substituting the strontium ion with at least one other divalent metal ion.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: September 22, 2009
    Assignee: Clemson University
    Inventors: Joseph W Kolis, Colin D. McMillen, Henry G. Giesber, III
  • Patent number: 7540917
    Abstract: Single, acentric, rhombohedral, potassium fluoroberyllium borate crystals of a size sufficient for use in a variety of laser and non-optical applications are formed by a hydrothermal method.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: June 2, 2009
    Assignee: Clemson University
    Inventors: Joseph W Kolis, Colin D. McMillen, Henry G. Giesber, III
  • Patent number: 7374616
    Abstract: Acentric, tetragonal lithium borate crystals are disclosed along with a hydrothermal method for forming such crystals. The crystals possess unique optical, non-linear optical, and other photonic properties and may be formed of sufficient size to be useful in a wide variety of photonic devices. In addition, the disclosed crystals are very hard and can be used in specialty grinding applications such as for grinding optical components for deep UV applications.
    Type: Grant
    Filed: July 9, 2004
    Date of Patent: May 20, 2008
    Assignee: Clemson University
    Inventor: Joseph W Kolis
  • Patent number: 7211234
    Abstract: The present invention is directed to lanthanide vanadate crystals having the formula LnVO4, wherein Ln is selected from La, Nd, Ce, Pr, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and combinations of at least two thereof, made by a hydrothermal method for a wide variety of end-use applications. The present method requires reacting a source of Ln3+ ions and a source of VO43+ ions, wherein Ln is selected from the group consisting of La, Nd, Ce, Pr, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y and combinations of at least two thereof, in an aqueous solution at a temperature of from about 350° C. to about 600° C. and at a pressure of from about 8 kpsi to about 40 kpsi, the aqueous solution comprising hydroxide ions at a concentration of from about 0.01 to about 5 molarity. Specifically, when made by the present hydrothermal method, single crystals of sufficient size for use in a variety of optical applications are readily formed.
    Type: Grant
    Filed: January 5, 2005
    Date of Patent: May 1, 2007
    Assignee: Clemson University
    Inventors: Joseph W Kolis, Steven J Syracuse