Abstract: A plasma enhanced chemical vapor deposition processing method is provided and includes: preheating a showerhead to a preheated state prior to and in preparation of a plasma enhanced chemical vapor deposition process of a substrate; determining at least one temperature of the showerhead while preheating the showerhead; determining based on the at least one temperature whether to continue preheating the showerhead; ceasing to preheat the showerhead in response to the at least one temperature satisfying a temperature criterion; and initiating the plasma enhanced chemical vapor deposition process while the showerhead is in the preheated state to package previously fabricated integrated circuits disposed on the substrate, wherein the plasma enhanced chemical vapor deposition process includes forming one or more film protective layers over the integrated circuits.

Abstract: A plasma enhanced chemical vapor deposition processing method is provided and includes: preheating a showerhead to a preheated state prior to and in preparation of a plasma enhanced chemical vapor deposition process of a substrate; determining at least one temperature of the showerhead while preheating the showerhead; determining based on the at least one temperature whether to continue preheating the showerhead; ceasing to preheat the showerhead in response to the at least one temperature satisfying a temperature criterion; and initiating the plasma enhanced chemical vapor deposition process while the showerhead is in the preheated state to package previously fabricated integrated circuits disposed on the substrate, wherein the plasma enhanced chemical vapor deposition process includes forming one or more film protective layers over the integrated circuits.

Abstract: A method for performing plasma enhanced chemical vapor deposition (PECVD) using a dual frequency process to deposit a silane-based oxide film on a substrate includes arranging the substrate on a substrate support in a processing chamber configured to perform PECVD and supplying PECVD process gases into the processing chamber. The process gases include a first process gas including silicon and a second process gas including an oxidant. The method further includes, while supplying the PECVD process gases into the processing chamber, generating a dual frequency plasma within the processing chamber to deposit the silane-based oxide film on the substrate by supplying a first radio frequency (RF) voltage to the processing chamber, and supplying a second RF voltage to the processing chamber. The first RF voltage is supplied at a first frequency and the second RF voltage is supplied at a second frequency that is different than the first frequency.

Abstract: A tray for storing minimum contact area (MCA) components of a substrate processing system includes a first compartment including at least one of a first lift pin tray and a first plurality of holes. The first lift pin tray includes a plurality of slots configured to retain lift pins of the substrate processing system. The first plurality of holes is configured to receive MCA pins of the substrate processing system. A first cup is arranged adjacent to the first compartment. The first cup includes a wall at least partially surrounding the first cup, the wall separates the first cup from the first compartment, and an upper edge of the wall extends above a bottom surface of the first compartment.

Abstract: A service cart for storing components of a substrate processing system includes a first side configured to store a transfer plate removed from the substrate processing system. The first side includes a first mount and a second mount that are spaced apart to retain respective upper portions of the transfer plate. Each of the first mount and the second mount includes a respective groove arranged to retain the upper portions of the transfer plate. The first side further includes a first bumper and a second bumper that are spaced apart to abut respective lower portions of the transfer plate. Each of the first bumper and the second bumper are arranged to retain a desired distance between the first side and the lower portions of the transfer plate. A second side of the service cart includes a drawer or an opening to provide access to an interior of the service cart.

Abstract: A service cart for storing components of a substrate processing system includes a first side configured to store a transfer plate removed from the substrate processing system. The first side includes a first mount and a second mount that are spaced apart to retain respective upper portions of the transfer plate. Each of the first mount and the second mount includes a respective groove arranged to retain the upper portions of the transfer plate. The first side further includes a first bumper and a second bumper that are spaced apart to abut respective lower portions of the transfer plate. Each of the first bumper and the second bumper are arranged to retain a desired distance between the first side and the lower portions of the transfer plate. A second side of the service cart includes a drawer or an opening to provide access to an interior of the service cart.

Abstract: A tray for storing minimum contact area (MCA) components of a substrate processing system includes a first compartment including at least one of a first lift pin tray and a first plurality of holes. The first lift pin tray includes a plurality of slots configured to retain lift pins of the substrate processing system. The first plurality of holes is configured to receive MCA pins of the substrate processing system. A first cup is arranged adjacent to the first compartment. The first cup includes a wall at least partially surrounding the first cup, the wall separates the first cup from the first compartment, and an upper edge of the wall extends above a bottom surface of the first compartment.