Patents by Inventor Joseph Wiggins

Joseph Wiggins has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etch compositions and methods of processing a substrate
    Patent number: 7629266
    Abstract: The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NH4F and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, and a second material. The substrate is exposed to an etch composition which comprises isopropyl alcohol and at least one of HF, NH4F and TMAF. The invention includes a method of processing a semiconductor construction including providing a construction which has a capacitor electrode material and an oxide material along at least a portion of the capacitor electrode material. At least some of the oxide material is removed by isotropic etching utilizing an etchant composition comprising isopropyl alcohol.
    Type: Grant
    Filed: March 1, 2007
    Date of Patent: December 8, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Janos Fucsko, Grady S. Waldo, Joseph Wiggins, Prashant Raghu
  • Etch compositions and methods of processing a substrate
    Patent number: 7491650
    Abstract: The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NH4F and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, and a second material. The substrate is exposed to an etch composition which comprises isopropyl alcohol and at least one of HF, NH4F and TMAF. The invention includes a method of processing a semiconductor construction including providing a construction which has a capacitor electrode material and an oxide material along at least a portion of the capacitor electrode material. At least some of the oxide material is removed by isotropic etching utilizing an etchant composition comprising isopropyl alcohol.
    Type: Grant
    Filed: July 27, 2005
    Date of Patent: February 17, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Janos Fucsko, Grady S. Waldo, Joseph Wiggins, Prashant Raghu
  • Etch Compositions and Methods of Processing a Substrate
    Publication number: 20070145009
    Abstract: The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NH4F and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, and a second material. The substrate is exposed to an etch composition which comprises isopropyl alcohol and at least one of HF, NH4F and TMAF. The invention includes a method of processing a semiconductor construction including providing a construction which has a capacitor electrode material and an oxide material along at least a portion of the capacitor electrode material. At least some of the oxide material is removed by isotropic etching utilizing an etchant composition comprising isopropyl alcohol.
    Type: Application
    Filed: March 1, 2007
    Publication date: June 28, 2007
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Janos Fucsko, Grady Waldo, Joseph Wiggins, Prashant Raghu
  • Etch compositions and methods of processing a substrate
    Publication number: 20070023396
    Abstract: The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NH4F and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, and a second material. The substrate is exposed to an etch composition which comprises isopropyl alcohol and at least one of HF, NH4F and TMAF. The invention includes a method of processing a semiconductor construction including providing a construction which has a capacitor electrode material and an oxide material along at least a portion of the capacitor electrode material. At least some of the oxide material is removed by isotropic etching utilizing an etchant composition comprising isopropyl alcohol.
    Type: Application
    Filed: July 27, 2005
    Publication date: February 1, 2007
    Inventors: Janos Fucsko, Grady Waldo, Joseph Wiggins, Prashant Raghu