Abstract: Methods for treating non-alcoholic steatohepatitis and/or hepatocellular carcinoma include administering a polypeptide antagonist of a Na/K ATPase/Src receptor complex to a subject in need thereof. Methods and assays for diagnosis or prognosis of non-alcoholic steatohepatitis and/or hepatocellular carcinoma in a subject are also provided and include the steps of providing a biological sample from the subject, determining an expression level or activity in the sample of at least one biomarker selected from Caveolin-1, Survivin, and SMAC; and comparing the expression level or activity of the at least one biomarker in the sample, if present, to a control expression level or activity of the at least one biomarker. Prophylaxis or treatment of the non-alcoholic steatohepatitis and/or hepatocellular carcinoma in a subject can then be initiated based on the expression level or activity of Caveolin-1, Survivin, and SMAC in the sample.

Abstract: Systems and methods for simulating subterranean regions having multi-scale, complex fracture geometries in a realistic simulation environment, which includes in the modeling process three-dimensional multi-scale rock discontinuities, hydraulic fractures, and heterogenous reservoir properties. Non-intrusive embedded discrete fracture modeling formulations are applied in conjunction with commercial or in-house simulators to efficiently and accurately model subsurface characteristics including three-dimensional geometries having combinations of complex hydraulic fractures and multi-scale rock discontinuities.

Abstract: Methods and apparatus for establishing secure wireless links between a handset and a base station in cordless telephone systems are described. A method of generating a secure wireless link between a handset and a base station includes initiating a linking procedure, generating a security code, displaying the security code at the base station, entering the security code into the handset and then establishing a radio frequency link between the handset and the base station utilizing the security code. A cordless telephone system capable of generating a secure wireless link includes both a handset and a base station. The handset includes a control circuit, a transmitter and a receiver coupled to the control circuit along with a keypad also coupled to the control circuit.

Abstract: Methods and apparatus for establishing secure wireless links between a handset and a base station in cordless telephone systems are described. A method of generating a secure wireless link between a handset and a base station includes initiating a linking procedure, generating a security code, displaying the security code at the base station, entering the security code into the handset and then establishing a radio frequency link between the handset and the base station utilizing the security code. A cordless telephone system capable of generating a secure wireless link includes both a handset and a base station. The handset includes a control circuit, a transmitter and a receiver coupled to the control circuit along with a keypad also coupled to the control circuit.

Abstract: A new inductor-capacitor resonance RF (LCR-RF) switching device is achieved. The device comprises a microelectronic mechanical switch and a spiral inductor. The microelectronic mechanical switch comprises, first, a first dielectric layer overlying a substrate. A down electrode overlies the first dielectric layer. A second dielectric layer overlies the down electrode. An up electrode overlies the down electrode with the second dielectric layer therebetween. A bridge post overlies the first dielectric layer and does not contact the down electrode or the up electrode. Multiple bridge posts may be used. Finally, a membrane is suspended over said down electrode. One end of the membrane is fixed to the top of the bridge post. An electrostatic potential between the membrane and the down electrode will cause the membrane to flex down toward the down electrode. This flexing of the membrane will cause the capacitance of the switching device to vary.

Abstract: A new inductor-capacitor resonance RF (LCR-RF) switching device is achieved. The device comprises a microelectronic mechanical switch and a spiral inductor. The microelectronic mechanical switch comprises, first, a first dielectric layer overlying a substrate. A down electrode overlies the first dielectric layer. A second dielectric layer overlies the down electrode. An up electrode overlies the down electrode with the second dielectric layer therebetween. A bridge post overlies the first dielectric layer and does not contact the down electrode or the up electrode. Multiple bridge posts may be used. Finally, a membrane is suspended over said down electrode. One end of the membrane is fixed to the top of the bridge post. An electrostatic potential between the membrane and the down electrode will cause the membrane to flex down toward the down electrode. This flexing of the membrane will cause the capacitance of the switching device to vary.

Abstract: A method of etching trenches through a low-k material layer using a hard mask wherein the trenches are sized down from the mask size by etching without sacrificing a vertical trench profile is described. A low-k dielectric material is provided over a region to be contacted on a substrate. A hard mask layer is deposited overlying the dielectric material. A mask is formed over the hard mask layer wherein the mask has a first opening of a first width. A second opening is etched in the hard mask layer where it is exposed by the mask wherein the second opening has a second width smaller than the first width and wherein the second opening has inwardly sloping sidewalls. A trench is etched through the dielectric layer to the region to be contacted through the second opening whereby the trench has a width equal to the second width. The trench is filled with a metal layer to complete fabrication of the integrated circuit device.

Abstract: This invention relates to the new reversed flash memory device which has improved electrical performance, yield and reliability because of better control of the dielectric interfaces resulting from first making the poly 2 control gate within the silicon substrate. The reverse structure is novel, as are the described process methods for forming the reverse stacking order.Shallow trenched isolation (STI) is first formed in the p-silicon substrate and encompasses the poly 2 control gate region; then the interpoly dielectric is grown/deposited on that single crystal silicon substrate. The floating poly 1 is formed on top of this uniform interpoly dielectric that has well-controlled surface smoothness. The tunnel oxide layer is formed on the floating poly 1 layer, and the source/drain is implanted on a straddling additional poly layer. There are fewer edges and associated stress weaknesses in the dielectric breakdown of both the reversed interpoly dielectric and the floating tunnel oxide.