Abstract: A polycrystalline silicon field plate underlies a polycrystalline silicon resistor and is heavily doped so that it is virtually a conductor while an aluminum field plate overlies the polycrystalline silicon resistor. Electrical potentials are applied to the polycrystalline field plate and the aluminum field plate, the potentials being selected so that an electric field is created at the boundary between the polycrystalline semiconductor resistor and the surrounding dielectric layer, the electric field forcing charge carriers in the resistor away from the boundary and toward a central region of the resistor. As a result, surface state noise in the resistor is significantly reduced.