Patents by Inventor Joseph Yedinak

Joseph Yedinak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060258081
    Abstract: A semiconductor structure is formed as follows. A semiconductor region is formed to have a P-type region and a N-type region forming a PN junction therebetween. A first trench is formed extending in the semiconductor region adjacent at least one of the P-type and N-type regions is formed. At least one diode is formed in the trench.
    Type: Application
    Filed: July 14, 2006
    Publication date: November 16, 2006
    Inventors: Christopher Kocon, Joseph Yedinak
  • Patent number: 7118951
    Abstract: An integrated circuit die includes an active area having source dopants and contacts. An active area metal layer overlies the active area. A sense area is disposed on the die. A sense area metal layer overlies the sense area. A plurality of polysilicon gate stripes, polysilicon openings, and body stripes are disposed on the die, and extend in a continuous and uninterrupted manner from the active area into the sense area. A first region from which source dopants and contacts have been excluded surrounds a periphery of the sense area. An etched region is disposed over the first region, thereby separating and electrically isolating the sense area metal layer from the active area metal layer.
    Type: Grant
    Filed: May 17, 2005
    Date of Patent: October 10, 2006
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Joseph A. Yedinak, Dwayne S. Reichl, Douglas J. Lange
  • Publication number: 20060214221
    Abstract: Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented.
    Type: Application
    Filed: May 31, 2006
    Publication date: September 28, 2006
    Inventors: Ashok Challa, Alan Elbanhawy, Thomas Grebs, Nathan Kraft, Dean Probst, Rodney Ridley, Steven Sapp, Qi Wang, Chongman Yun, J.G. Lee, Peter Wilson, Joseph Yedinak, J.Y. Jung, H.C. Jang, Babak Sani, Richard Stokes, Gary Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James Murphy, Gordon Madson, Bruce Marchant, Christopher Rexer, Christopher Kocon, Debra Woolsey
  • Publication number: 20060214222
    Abstract: Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented.
    Type: Application
    Filed: May 31, 2006
    Publication date: September 28, 2006
    Inventors: Ashok Challa, Alan Elbanhawy, Thomas Grebs, Nathan Kraft, Dean Probst, Rodney Ridley, Steven Sapp, Qi Wang, Chongman Yun, J. Lee, Peter Wilson, Joseph Yedinak, J. Jung, H. Jang, Babak Sani, Richard Stokes, Gary Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James Murphy, Gordon Madson, Bruce Marchant, Christopher Rexer, Christopher Kocon, Debra Woolsey
  • Publication number: 20050272209
    Abstract: An integrated circuit die includes an active area having source dopants and contacts. An active area metal layer overlies the active area. A sense area is disposed on the die. A sense area metal layer overlies the sense area. A plurality of polysilicon gate stripes, polysilicon openings, and body stripes are disposed on the die, and extend in a continuous and uninterrupted manner from the active area into the sense area. A first region from which source dopants and contacts have been excluded surrounds a periphery of the sense area. An etched region is disposed over the first region, thereby separating and electrically isolating the sense area metal layer from the active area metal layer.
    Type: Application
    Filed: May 17, 2005
    Publication date: December 8, 2005
    Inventors: Joseph Yedinak, Dwayne Reichl, Douglas Lange
  • Publication number: 20050167742
    Abstract: Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented.
    Type: Application
    Filed: December 29, 2004
    Publication date: August 4, 2005
    Applicant: Fairchild Semiconductor Corp.
    Inventors: Ashok Challa, Alan Elbanhawy, Thomas Grebs, Nathan Kraft, Dean Probst, Rodney Ridley, Steven Sapp, Qi Wang, Chongman Yun, J.G. Lee, Peter Wilson, Joseph Yedinak, J.Y. Jung, H.C. Jang, Babak Sani, Richard Stokes, Gary Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James Murphy, Gordon Madson, Bruce Marchant, Christopher Rexer, Christopher Kocon, Debra Woolsey
  • Patent number: 6906362
    Abstract: An integrated circuit die includes an active area having source dopants and contacts. An active area metal layer overlies the active area. A sense area is disposed on the die. A sense area metal layer overlies the sense area. A plurality of polysilicon gate stripes, polysilicon openings, and body stripes are disposed on the die, and extend in a continuous and uninterrupted manner from the active area into the sense area. A first region from which source dopants and contacts have been excluded surrounds a periphery of the sense area. An etched region is disposed over the first region, thereby separating and electrically isolating the sense area metal layer from the active area metal layer.
    Type: Grant
    Filed: December 10, 2002
    Date of Patent: June 14, 2005
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Joseph A. Yedinak, Dwayne S. Reichl, Douglas J. Lange
  • Patent number: 6831329
    Abstract: A quick punch-through integrated gate bipolar transistor (IGBT) includes a drift region and a gate. The drift region has a drift region dopant concentration and a drift region thickness. The gate has a gate capacitance. The drift region dopant concentration, drift region thickness and gate capacitance are adjusted dependent at least in part upon the PNP gain of the IGBT to maintain the potential difference between the gate and emitter at a level greater than the IGBT threshold voltage when the collector voltage reaches the bus voltage. This insures that the hole carrier concentration remains approximately equal to or greater than the drift region dopant concentration when the depletion layer punches through to the buffer region during the turn-off delay. Thus, the collector voltage overshoot and the rate of change of voltage and current are controlled, and electromagnetic interference is reduced, during turn off.
    Type: Grant
    Filed: October 22, 2002
    Date of Patent: December 14, 2004
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Joseph A. Yedinak, Jon Gladish, Sampat Shekhawat, Gary M. Dolny, Praveen Muraleedharan Shenoy, Douglas Joseph Lange, Mark L. Rinehimer
  • Patent number: 6798019
    Abstract: An IGBT has striped cell with source stripes 2a, 2b continuous or segmented along the length of the base stripe 3. The opposite stripes are periodically connected together by the N+ contact regions 20 to provide channel resistance along the width of the source stripes 2a, 2b. For continuous stripes the resistance between two sequential contact areas 20a, 20b is greatest in the middle and current concentrates near the source contact regions 20. The wider the spacing between the contacts 20, the larger the resistive drop to the midpoint between two N+ contacts 20.
    Type: Grant
    Filed: January 23, 2002
    Date of Patent: September 28, 2004
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Joseph A. Yedinak, Dwayne S. Reichl, Jack E. Wojslawowicz, Bernard J. Czeck, Robert D. Baran, Douglas Lange
  • Patent number: 6777747
    Abstract: An IGBT has a thick buffer region with increased doping to improve self-clamped inductive switching and device manufacture. A planar or trench gate IGBT has a buffer layer more than 25 microns thick. The buffer layer is doped high enough so that its carriers are more numerous than minority carriers, particularly at the transition between the N buffer & N drift region.
    Type: Grant
    Filed: January 18, 2002
    Date of Patent: August 17, 2004
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Joseph A. Yedinak, Jack E. Wojslawowicz, Bernard J. Czeck, Robert D. Baran, Douglas Lange
  • Publication number: 20040135213
    Abstract: An integrated circuit includes a die having a device layer. An insulating layer is disposed over the device layer. A die street defines the outermost bounds of the die. A voltage divider network including a plurality of resistive elements derives a plurality of predetermined bias voltages. A field plate termination includes a plurality of field plates disposed on the oxide layer and are laterally spaced apart relative to each other and relative to the die street. Each of the plurality of field plates is electrically connected to a corresponding bias voltage. The bias voltage applied to a given field plate is determined by and increases with the proximity of that field plate relative to the die street.
    Type: Application
    Filed: October 9, 2003
    Publication date: July 15, 2004
    Inventors: Joseph A. Yedinak, Dwayne S. Reichl, Bernard J. Czeck, Douglas J. Lange
  • Publication number: 20030141522
    Abstract: An integrated circuit die includes an active area having source dopants and contacts. An active area metal layer overlies the active area. A sense area is disposed on the die. A sense area metal layer overlies the sense area. A plurality of polysilicon gate stripes, polysilicon openings, and body stripes are disposed on the die, and extend in a continuous and uninterrupted manner from the active area into the sense area. A first region from which source dopants and contacts have been excluded surrounds a periphery of the sense area. An etched region is disposed over the first region, thereby separating and electrically isolating the sense area metal layer from the active area metal layer.
    Type: Application
    Filed: December 10, 2002
    Publication date: July 31, 2003
    Inventors: Joseph A. Yedinak, Dwayne S. Reichl, Douglas J. Lange
  • Publication number: 20030136974
    Abstract: An IGBT has a thick buffer region with increased doping to improve self-clamped inductive switching and device manufacture. A planar or trench gate IGBT has a buffer layer more than 25 microns thick. The buffer layer is doped high enough so that its carriers are more numerous than minority carriers, particularly at the transition between the N buffer & N drift region.
    Type: Application
    Filed: January 18, 2002
    Publication date: July 24, 2003
    Inventors: Joseph A. Yedinak, Jack E. Wojslawowicz, Bernard J. Czeck, Robert D. Baran, Douglas Lange
  • Publication number: 20030137015
    Abstract: An IGBT has striped cell with source stripes 2a, 2b continuous or segmented along the length of the base stripe 3. The opposite stripes are periodically connected together by the N+ contact regions 20 to provide channel resistance along the width of the source stripes 2a, 2b. For continuous stripes the resistance between two sequential contact areas 20a, 20b is greatest in the middle and current concentrates near the source contact regions 20. The wider the spacing between the contacts 20, the larger the resistive drop to the midpoint between two N+ contacts 20.
    Type: Application
    Filed: January 23, 2002
    Publication date: July 24, 2003
    Inventors: Joseph A. Yedinak, Dwayne S. Reichl, Jack E. Wojslawowicz, Bernard J. Czeck, Robert D. Baran, Douglas Lange
  • Publication number: 20030080377
    Abstract: A quick punch-through integrated gate bipolar transistor (IGBT) includes a drift region and a gate. The drift region has a drift region dopant concentration and a drift region thickness. The gate has a gate capacitance. The drift region dopant concentration, drift region thickness and gate capacitance are adjusted dependent at least in part upon the PNP gain of the IGBT to maintain the potential difference between the gate and emitter at a level greater than the IGBT threshold voltage when the collector voltage reaches the bus voltage. This insures that the hole carrier concentration remains approximately equal to or greater than the drift region dopant concentration when the depletion layer punches through to the buffer region during the turn-off delay. Thus, the collector voltage overshoot and the rate of change of voltage and current are controlled, and electromagnetic interference is reduced, during turn off.
    Type: Application
    Filed: October 22, 2002
    Publication date: May 1, 2003
    Inventors: Joseph A. Yedinak, Jon Gladish, Sampat Shekhawat, Gary M. Dolny, Praveen Muraleedharan Shenoy, Douglas Joseph Lange, Mark L. Rinehimer
  • Patent number: 5323036
    Abstract: In a power FET composed of a substrate having upper and lower surfaces, the FET providing a current flow path between the upper and lower surfaces, and the FET having a plurality of drain regions extending to the substrate upper surface and an insulated gate electrode disposed on the upper surface, the improvement wherein said drain regions are disposed in a hexagonal lattice pattern, and said gate electrode comprises: a plurality of gate segments each covering a respective drain region; and a plurality of connecting segments each connecting together three of said gate segments.
    Type: Grant
    Filed: January 21, 1992
    Date of Patent: June 21, 1994
    Assignee: Harris Corporation
    Inventors: John M. S. Neilson, Frederick P. Jones, Joseph A. Yedinak, Christopher L. Rexer
  • Patent number: 5218220
    Abstract: In a power FET composed of a substrate having upper and lower surfaces and having a semiconductor body of a first conductivity type, the body providing a current flow path between the upper and lower surfaces and having at least one body region which extends to said upper surface; and at least one base region extending into the substrate from the upper surface, the base region being of a second conductivity type opposite to the first conductivity type and having an upper portion located adjacent the upper surface of the substrate and a lower portion separated from the upper surface of the substrate by the upper portion, the upper portion defining a channel which is disposed in the current flow path adjacent the upper surface of the substrate, and the FET further having an insulated gate disposed at the upper surface above the body region, an impurity layer region extends into the channel from the upper surface of the substrate for giving the channel a lower impurity density than the lower portion of the base
    Type: Grant
    Filed: November 12, 1991
    Date of Patent: June 8, 1993
    Assignee: Harris Corporation
    Inventors: John M. S. Neilson, Frederick P. Jones, Joseph A. Yedinak
  • Patent number: 5164802
    Abstract: A monolithic semiconductor device comprises a VDMOS transistor having first and second main electrodes and a control electrode, and a lateral MOSFET having first and second main electrodes and a control electrode, wherein one of the first and second electrodes of the lateral MOSFET has a lower doping concentration than that of the first and second main electrodes of the VDMOS transistor for forming a Schottky barrier diode.
    Type: Grant
    Filed: March 20, 1991
    Date of Patent: November 17, 1992
    Assignee: Harris Corporation
    Inventors: Frederick P. Jones, Joseph A. Yedinak, John M. S. Neilson, Robert S. Wrathall, Jeffrey G. Mansmann, Claire E. Jackoski
  • Patent number: 5079608
    Abstract: A power MOS transistor, including source, drain, and gate electrodes, comprises a substrate of a semiconductor material of one conductivity type having first and second opposed surfaces; a drain region extending through the substrate between the surfaces; a plurality of spaced body regions of the opposite conductivity type extending into the substrate from the first surface; and a source region of the one conductivity type extending into the substrate from the first surface within each of the body regions, the interface of each of the source regions with its respective body region at the first surface being spaced from the interface of its respective body region and the drain region at the first surface to form a channel region therebetween. A gate electrode overlies and is insulated from the first surface and extends across the channel regions. A conductive electrode extends over and is insulated from the gate electrode, and contacts at least a portion of the source regions.
    Type: Grant
    Filed: November 6, 1990
    Date of Patent: January 7, 1992
    Assignee: Harris Corporation
    Inventors: Paul J. Wodarczyk, Frederick P. Jones, John M. S. Neilson, Joseph A. Yedinak