Abstract: A mirror projection system for use in a step-and-scan lithographic projection apparatus, in which a mask pattern (15) is repetitively scan-imaged on a number of areas of a substrate (20) by means of a beam (b) of EUV radiation having a cross-section shaped as a segment of a ring, has six imaging mirrors (5-10). The design is such that no intermediate image is formed and the system has a negative magnification. When using this projection system in a scanning apparatus, the mask and the substrate move in opposite directions during scanning, which is advantageous from a mechanical point of view.

Abstract: A device scans an optical record carrier having optically detectable marks along a track. The device includes a radiation source for emitting a radiation beam, an objective system for guiding the radiation beam to the record carrier, and a radiation-sensitive detection system for receiving radiation from the record carrier. The detection system includes at least two detectors on both sides of a dividing line. Each detector has an output for providing a detector signal. An electronic circuit forms a focus error signal from the detector signals. The electronic circuit determines a time or phase difference between corresponding parts of the detector signals relating to passage of the radiation beam over patterns of the marks having a spatial frequency in a first range and in a different, second range, and forms a focus error signal in dependence on the time or phase difference.

Abstract: An optical scanning device scans a surface (23) provided with marks with a focused radiation beam (35) along a scan line. The device has a radiation-sensitive detection system (39) comprises a plurality of detectors. An electronic circuit (41) determines the time differences between corresponding parts of the detector signals relating to passage of the radiation beam over one of the marks. The time differences are used to form a signal representing a primary wavefront aberration of the radiation beam.

Abstract: A plate with substantially constant thickness is used to compensate for the residual distortion in the image projected by a high-quality projection lens for lithography. The two surfaces of the plate have an identical aspherical profile, whose shape has been calculated using the measured distortion map of the lithographic objective. The figuring process applied to the plate uses the principle of polishing in the presence of an elastic deformation, so as to achieve the desired aspherical shape on both sides.

Abstract: A mirror projection system for use in a step-and-scan lithographic projection apparatus, in which a mask pattern (15) is repetitively scan-imaged on a number of areas of a substrate (20) by means of a beam (b) of EUV radiation having a cross-section shaped as a segment of a ring, has six imaging mirrors (5-10). The design is such that no intermediate image is formed and the system has a negative magnification. When using this projection system in a scanning apparatus, the mask and the substrate move in opposite directions during scanning, which is advantageous from a mechanical point of view.

Abstract: A plate with substantially constant thickness is used to compensate for the residual distortion in the image projected by a high-quality projection lens for lithography. The two surfaces of the plate have an identical aspherical profile, whose shape has been calculated using the measured distortion map of the lithographic objective. The figuring process applied to the plate uses the principle of polishing in the presence of an elastic deformation, so as to achieve the desired aspherical shape on both sides.

Abstract: A mirror projection system for use in a step-and-scan lithographic projection apparatus, in which a mask pattern is repetitively scan-imaged on a number of areas of a substrate by means of a beam of EUV radiation having a cross-section shaped as a segment of a ring. The system has six imaging mirrors arranged such that no intermediate image is formed and the system has a negative magnification. When this projection system is used in a scanning apparatus, the mask and the substrate move in opposite directions during scanning, which is advantageous from a mechanical point of view.

Abstract: A mirror projection system for use in a step-and-scan lithographic projection apparatus in which a mask pattern is repetitively scan-imaged on a number of areas of a substrate by means of a beam of EUV radiation having a circular segment-shaped cross-section. The projection system, which is easier to manufacture at lower cost than a projection system with six or more imaging mirrors, has only five imaging mirrors with a good numerical aperture and an acceptable image-ringfield width. An EUV lithographic projection apparatus provided with the new projection system has a wafer throughput which is approximately 50% higher than that of an apparatus provided with a six-mirror projection system. Moreover, such a lithographic projection has a compact construction.

Abstract: A plate with substantially constant thickness is used to compensate for the residual distortion in the image projected by a high-quality projection lens for lithography. The two surfaces of the plate have an identical aspherical profile, whose shape has been calculated using the measured distortion map of the lithographic objective. The figuring process applied to the plate uses the principle of polishing in the presence of an elastic deformation, so as to achieve the desired aspherical shape on both sides.

Abstract: A polarization-sensitive beam splitter comprising at least one transparent wedge-shaped element of a birefringent material is made by providing each one of two substrate plates with an orientation layer, whereafter the substrate plates are arranged with their orientation layers facing each other while forming a wedge-shaped interspace. The interspace is filled with a liquid crystalline monomer composition, which is subsequently cured while forming a wedge-shaped element of a uniaxially oriented polymer material. After possible removal of the substrate plates, two or three of such wedge-shaped elements can be joined to a Wollaston prism for use in the pick-up element of a magneto-optical recording system.

Abstract: A mirror projection system for use in a step-and-scan lithographic projection apparatus in which a mask pattern (15) is repetitively scan-imaged on a number of areas of a substrate (20) by means of a beam (b) of EUV radiation having a circular segment-shaped cross-section. This system, which is easier to manufacture at lower cost than a projection system with six or more imaging mirrors, has only five imaging mirrors (5-9) with a good numerical aperture and an acceptable image-ringfield width. An EUV lithographic projection apparatus provided with the new projection system has a wafer throughput which is approximately 50% higher than that of an apparatus provided with a six-mirror projection system. Moreover, it has a compact construction.

Abstract: In a lens system for focusing a divergent beam in a small spot and comprising a collimator lens and an objective lens, the collimator lens is composed of a positive plastics lens element and a negative glass lens element. This collimator corrects the temperature-dependent spherical aberration of the objective lens. This lens system is very suitable for a scanning device and an apparatus for reading/writing high-density optical discs.

Abstract: A mirror projection system for use in a step-and-scan lithographic projection apparatus in which a mask pattern is repetitively scan-imaged on a number of areas of a substrate by means of a beam of EUV radiation having a circular segment-shaped cross-section. The projection system, which is easier to manufacture at lower cost than a projection system with six or more imaging mirrors, has only five imaging mirrors with a good numerical aperture and an acceptable image-ringfield width. An EUV lithographic projection apparatus provided with the new projection system has a wafer throughput which is approximately 50% higher than that of an apparatus provided with a six-mirror projection system. Moreover, such a lithographic projection has a compact construction.

Abstract: An EUV radiation source unit (10) for use in a lithographic projection apparatus to illuminate a mask pattern (22) which is to be projected on a substrate (W) comprises an electron source (12) and a medium in which the electrons of the source generate EUV Cherenkov radiation (PB). The wavelengths of the Cherenkov radiation and the multilayer structure of the mirrors (31-34) of the projection system (30) are adapted to each other, so that these mirrors show a maximum reflectivity. The medium forms part of the mask (MA) so that a mirror condenser system is no longer needed. In this way, an efficient transmission of radiation (PB) from the source to the substrate is obtained.

Abstract: A mirror projection system for use in a step-and-scan lithographic projection apparatus, in which a mask pattern is repetitively scan-imaged on a number of areas of a substrate by means of a beam of EUV radiation, and having a cross-section shaped as a segment of a ring, has six imaging mirrors. The design is such that an intermediate image is formed between the fourth and the firth mirror from the object side, and the system has a relatively large working distance.

Abstract: A mask pattern is repetitively scan-imaged on a number of areas of a substrate by means of a beam of EUV radiation having a circular segment-shaped cross-section. This system, which is easier to manufacture at lower cost than a projection system with six or more imaging mirrors, has only five imaging mirrors with a good numerical aperture and an acceptable image-ringfield width. An EUV lithographic projection apparatus provided with the new projection system has a wafer throughput which is approximately 50% higher than that of an apparatus provided with a six-mirror projection system. Moreover, it has a compact construction.

Abstract: A device is described for optically scanning a record carrier with a radiation beam having a high numerical aperture. The radiation beam is focused on the record carrier by means of an objective lens and a plano-convex lens. The plano-convex lens has a gap with the record carrier of several tens of micrometers. It focuses the radiation beam to a point at least 30 focal depths away from an aplanatic point of the plano-convex lens. As a consequence, the lens has a relatively large tolerance for sideways movements.

Abstract: An optical beam shaper (10) for converting a radiation beam (5, 6, 7, 8) having an elliptical cross-section into a beam (9) having a more circular cross-section is described. This element (10) has a cylindrical entrance surface (12) and a toroidal exit surface (14) and can be arranged close to a diode laser (1) so that the risk of wavefront deviations due to defocusing is reduced. The element has a high coupling efficiency. The beam shaper is also provided with a grating for forming a sub-beam from the radiation beam.

Abstract: A projection system is described for projecting a mask pattern on a substrate by means of EUV radiation, which projection system consecutively comprises a first concave mirror (1), a convex mirror (2) and a second concave mirror (3). Since the system has a focal length f which is at least equal to +1/2 L, in which L is the length of the system, and the chief ray of the object beam (b.sub.2) leaving the object plane (V) is inclined towards the optical axis (OO'), a compact system is obtained whose first concave mirror (1) has relatively moderate dimensions and in which the axial positions of the concave mirrors (1, 3) are approximately equal, so that these mirrors can be arranged on a common support.

Abstract: A device for optically scanning a record carrier with radiation beam having a high numerical aperture. The radiation beam is focused on the record carrier by an objective lens and a plano-convex lens. The plano-convex lens has a gap with the record carrier of several tens of micorometers. It focuses the radiation beam to a point at least 30 focal depths away from an aplanatic point of the plano-convex lens. As a consequence, the lens has a relatively large tolerance for sideways movements.