Abstract: What is proposed is a method of producing at least two differently heavily doped subzones (3, 5) predominantly doped with a first dopant type in a silicon substrate (1), in particular for a solar cell. The method comprises: covering at least a first subzone (3) of the silicon substrate (1) in which a heavier doping with the first dopant type is to be produced with a doping layer (7) of borosilicate glass, wherein at least a second subzone (5) of the silicon substrate (1) in which a lighter doping with the first dopant type is to be produced is not covered with the doping layer (7), and wherein boron as a dopant of a second dopant type differing from the first dopant type and oppositely polarized with respect to the same is included in the layer (7), and; heating the such prepared silicon substrate (1) to temperatures above 300° C., preferably above 900° C., in a furnace in an atmosphere containing significant quantities of the first dopant type.

Abstract: A method for producing a solar cell is described, in which a plurality of doped regions are to be etched-back selectively or over their entire surface. Once a semiconductor substrate (1) has been provided, various doped regions (3, 5) are formed in partial regions of a surface of the semiconductor substrate, the various doped regions (3, 5) differing as regards their doping concentration and/or their doping polarity. The various doped regions (3, 5) are then purposively etched-back in order to achieve desired doping profiles, and finally electrical contacts (21) are formed at least at some of the doped regions (3, 5). The etching-back of the various doped regions takes place in a common etching operation in an etching medium.

Abstract: What is proposed is a method of producing at least two differently heavily doped subzones (3, 5) predominantly doped with a first dopant type in a silicon substrate (1), in particular for a solar cell. The method comprises: covering at least a first subzone (3) of the silicon substrate (1) in which a heavier doping with the first dopant type is to be produced with a doping layer (7) of borosilicate glass, wherein at least a second subzone (5) of the silicon substrate (1) in which a lighter doping with the first dopant type is to be produced is not covered with the doping layer (7), and wherein boron as a dopant of a second dopant type differing from the first dopant type and oppositely polarized with respect to the same is included in the layer (7), and; heating the such prepared silicon substrate (1) to temperatures above 300° C., preferably above 900° C., in a furnace in an atmosphere containing significant quantities of the first dopant type.

Abstract: A method for producing a solar cell is described, in which a plurality of doped regions are to be etched-back selectively or over their entire surface. Once a semiconductor substrate (1) has been provided, various doped regions (3, 5) are formed in partial regions of a surface of the semiconductor substrate, the various doped regions (3, 5) differing as regards their doping concentration and/or their doping polarity. The various doped regions (3, 5) are then purposively etched-back in order to achieve desired doping profiles, and finally electrical contacts (21) are formed at least at some of the doped regions (3, 5). The etching-back of the various doped regions takes place in a common etching operation in an etching medium.