Patents by Inventor Josh Kaufman

Josh Kaufman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11508500
    Abstract: A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. At least one TFR cap layer is formed, and a TFR etch defines a TFR element from the TFR film. A TFR contact etch forms TFR contact openings over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element. The TFR cap layer(s), e.g., SiN cap and/or oxide cap formed over the TFR film, may (a) provide an etch stop during the TFR contact etch and/or (b) provide a hardmask during the TFR etch, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: November 22, 2022
    Assignee: Microchip Technology Incorporated
    Inventors: Paul Fest, Jacob Williams, Josh Kaufman
  • Patent number: 11495657
    Abstract: A process is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. An oxide cap is formed over the TFR film, which acts as a hardmask during a TFR etch of the TFR film to define a TFR element, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer. TFR edge spacers may be formed over lateral edges of the TFR element to insulate such TFR element edges. TFR contact openings are etched in the oxide cap over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: November 8, 2022
    Assignee: Microchip Technology Incorporated
    Inventors: Paul Fest, Jacob Williams, Josh Kaufman, Greg Dix
  • Publication number: 20210272725
    Abstract: A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. At least one TFR cap layer is formed, and a TFR etch defines a TFR element from the TFR film. A TFR contact etch forms TFR contact openings over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element. The TFR cap layer(s), e.g., SiN cap and/or oxide cap formed over the TFR film, may (a) provide an etch stop during the TFR contact etch and/or (b) provide a hardmask during the TFR etch, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer.
    Type: Application
    Filed: October 15, 2020
    Publication date: September 2, 2021
    Applicant: Microchip Technology Incorporated
    Inventors: Paul Fest, Jacob Williams, Josh Kaufman
  • Publication number: 20210273037
    Abstract: A process is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. An oxide cap is formed over the TFR film, which acts as a hardmask during a TFR etch of the TFR film to define a TFR element, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer. TFR edge spacers may be formed over lateral edges of the TFR element to insulate such TFR element edges. TFR contact openings are etched in the oxide cap over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element.
    Type: Application
    Filed: October 15, 2020
    Publication date: September 2, 2021
    Applicant: Microchip Technology Incorporated
    Inventors: Paul Fest, Jacob Williams, Josh Kaufman, Greg Dix
  • Publication number: 20140330313
    Abstract: An embodiment of the invention provides for a system, such as a cervical plate fusion system, that has mechanisms for preventing bone screws from backing out of the plate. The system prevents both counter-rotation of the screw and axial backing out of the screw. Other embodiments are described herein.
    Type: Application
    Filed: July 18, 2014
    Publication date: November 6, 2014
    Inventors: Josh Kaufman, Scott Bryant, Greg Calbert, John Stokes, Matthew Geck, Landon Gilkey
  • Patent number: 8784459
    Abstract: An embodiment of the invention provides for a system, such as a cervical plate fusion system, that has mechanisms for preventing bone screws from backing out of the plate. The system prevents both counter-rotation of the screw and axial backing out of the screw. Other embodiments are described herein.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: July 22, 2014
    Assignee: Genesys Spine
    Inventors: Josh Kaufman, Scott Bryant, Greg Calbert, John Stokes, Matthew Geck, Landon Gilkey
  • Publication number: 20130184767
    Abstract: An embodiment of the invention provides for a system, such as a cervical plate fusion system, that has mechanisms for preventing bone screws from backing out of the plate. The system prevents both counter-rotation of the screw and axial backing out of the screw. Other embodiments are described herein.
    Type: Application
    Filed: January 17, 2012
    Publication date: July 18, 2013
    Inventors: Josh Kaufman, Scott Bryant, Greg Calbert, John Stokes, Matthew Geck, Landon Gilkey