Abstract: The invention includes an assembly (130) having a physical vapor deposition target (102) separated from a backing plate (120) with a layer (104) consisting essentially of one or both of molybdenum and tantalum. The invention also includes an assembly comprising a backing plate of at least 99.9% aluminum bound to a target of at least 99.9% molybdenum through a bond having a strength of at least about 6,000 pounds per square inch (psi). Additionally, the invention includes a method of bonding a tungsten-containing material to an aluminum-containing material. A layer of molybdenum-containing material (104) is provided between the tungsten-containing material (102) and the aluminum-containing material (120); and is bonded to both the tungsten-containing material (102) and the aluminum-containing material (120).

Abstract: A diffusion bonded PVD target assembly (30) includes a target blank (34) bonded directly to a backing plate (32), a majority crystal structure of the target blank comprising a HCP structure. The target blank can include cobalt and the backing plate can include an aluminum or copper alloy. The target assembly can exhibit a thickness dependent high PTF, such as at least about 60%. A PVD target fabrication method includes diffusion bonding a target blank to a backing plate, a majority crystal structure of the target blank comprising a HCP structure; transitioning at least some of the HCP structure to a non-HCP structure; and restoring a majority of the non-HCP structure to the HCP structure. The transitioning can include hot pressing the target blank and backing plate at a temperature exceeding a HCP to non-HCP transition temperature of the target blank. The restoring can include cooling at a specified low rate.