Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for bad row mode. The memory may prevent proper access operations (e.g., read operations) from being performed on a selected bad row of the memory as part of a bad row mode. For example, the memory may store a bad row address and when an access address matches the bad row address, may suppress one or more signals, change data read from the address, or combinations thereof. The bad row mode may be used to provide a positive control for post package repair (PPR) operations on the memory. A controller may enter the memory into bad row mode and then test the memory to determine if the selected bad row can be located and repaired via PPR.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for bad row mode. The memory may prevent proper access operations (e.g., read operations) from being performed on a selected bad row of the memory as part of a bad row mode. For example, the memory may store a bad row address and when an access address matches the bad row address, may suppress one or more signals, change data read from the address, or combinations thereof. The bad row mode may be used to provide a positive control for post package repair (PPR) operations on the memory. A controller may enter the memory into bad row mode and then test the memory to determine if the selected bad row can be located and repaired via PPR.

Abstract: Signals are coupled to and from stacked semiconductor dies through first and second sets of external terminals. The external terminals in the second set are connected to respective conductive paths extending through each of the dies. Signals are coupled to and from the first die through the first set of external terminals. Signals are also coupled to and from the second die through the conductive paths in the first die and the second set of external terminals. The external terminals in first and second sets of each of a plurality of pairs are connected to an electrical circuit through respective multiplexers. The multiplexers in each of the dies are controlled by respective control circuits that sense whether a die in the first set is active. The multiplexers connect the external terminals in either the first set or the second set depending on whether the bonding pad in the first set is active.

Abstract: Signals are coupled to and from stacked semiconductor dies through first and second sets of external terminals. The external terminals in the second set are connected to respective conductive paths extending through each of the dies. Signals are coupled to and from the first die through the first set of external terminals. Signals are also coupled to and from the second die through the conductive paths in the first die and the second set of external terminals. The external terminals in first and second sets of each of a plurality of pairs are connected to an electrical circuit through respective multiplexers. The multiplexers in each of the dies are controlled by respective control circuits that sense whether a die in the first set is active. The multiplexers connect the external terminals in either the first set or the second set depending on whether the bonding pad in the first set is active.

Abstract: Signals are coupled to and from stacked semiconductor dies through first and second sets of external terminals. The external terminals in the second set are connected to respective conductive paths extending through each of the dies. Signals are coupled to and from the first die through the first set of external terminals. Signals are also coupled to and from the second die through the conductive paths in the first die and the second set of external terminals. The external terminals in first and second sets of each of a plurality of pairs are connected to an electrical circuit through respective multiplexers. The multiplexers in each of the dies are controlled by respective control circuits that sense whether a die in the first set is active. The multiplexers connect the external terminals in either the first set or the second set depending on whether the bonding pad in the first set is active.