Abstract: A method of forming a high electron mobility transistor (HEMT) includes: providing a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate; forming a first insulating layer on the barrier layer; and forming a gate contact, a source contact, and a drain contact on the barrier layer. An interface between the first insulating layer and the barrier layer comprises a modified interface region on a drain access region and/or a source access region of the semiconductor structure such that a sheet resistance of the drain access region and/or the source access region is between 300 and 400 ?/sq.

Abstract: A GaN-based high electron mobility transistor (HEMT) device includes a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate, a drain contact and a source contact on the barrier layer, and a gate contact on the barrier layer between the drain contact and the source contact. A sheet resistance of a drain access region and/or a source access region of the semiconductor structure is between 300 and 400 ?/sq.

Abstract: A method of forming a high electron mobility transistor (HEMT) includes: providing a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate; forming a first insulating layer on the barrier layer; and forming a gate contact, a source contact, and a drain contact on the barrier layer. An interface between the first insulating layer and the barrier layer comprises a modified interface region on a drain access region and/or a source access region of the semiconductor structure such that a sheet resistance of the drain access region and/or the source access region is between 300 and 400 ?/sq.

Abstract: A transistor device includes a semiconductor structure, source and drain contacts on the semiconductor structure, a gate on the semiconductor structure between the source and drain contacts, and a surface passivation layer on the semiconductor structure between the gate and the source or drain contact. The surface passivation layer includes an opening therein that exposes a first region of the semiconductor structure for processing the first region differently than a second region of the semiconductor structure adjacent the gate. Related devices and fabrication methods are also discussed.

Abstract: A GaN-based high electron mobility transistor (HEMT) device includes a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate, a drain contact and a source contact on the barrier layer, and a gate contact on the barrier layer between the drain contact and the source contact. A sheet resistance of a drain access region and/or a source access region of the semiconductor structure is between 300 and 400 ?/sq.