Abstract: An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages.

Abstract: An electrostatic chuck for holding an article to be processed in a plasma reaction chamber and comprising a metal pedestal coated with a layer of dielectric material in which is formed a cooling gas distribution system for passing and distributing a cooling gas between the upper surface of the layer and the article when supported on the pedestal. The gas distribution system comprises a plurality of intersecting grooves formed entirely in the upper surface of the layer with small gas distribution holes through intersections of the grooves over upper ends of cooling gas receiving holes formed in an underside of the pedestal.