Abstract: A composition includes a few-layer phosphorene nanomaterial comprising at least one of mono-, bi-, and n-layer phosphorene nanosheets, where n is an integer selected from 3 to 6; deoxygenated water; and at least one amphiphilic surface active component.

Abstract: A composition includes a few-layer phosphorene nanomaterial comprising at least one of mono-, bi-, and n-layer phosphorene nanosheets, where n is an integer selected from 3 to 6; deoxygenated water; and at least one amphiphilic surface active component.

Abstract: A method of preparing an atomically-dimensioned elemental boron allotrope includes providing a substrate at a temperature greater than about 200° C.; generating elemental boron vapor from a solid elemental boron source; and contacting said substrate with said boron vapor for at least one of a rate and at a pressure sufficient to deposit on said substrate a boron allotrope comprising an elemental boron layer comprising a boron atomic thickness dimension, said method under negative pressure.

Abstract: A method of preparing an atomically-dimensioned elemental boron allotrope includes providing a substrate at a temperature greater than about 200° C.; generating elemental boron vapor from a solid elemental boron source; and contacting said substrate with said boron vapor for at least one of a rate and at a pressure sufficient to deposit on said substrate a boron allotrope comprising an elemental boron layer comprising a boron atomic thickness dimension, said method under negative pressure.

Abstract: A boron allotrope comprising an elemental boron layer comprising a boron atomic thickness dimension and a method for preparation thereof.

Abstract: Methods for the preparation of few-layer phosphorene, compositions thereof and related devices fabricated therefrom.

Abstract: A boron allotrope comprising an elemental boron layer comprising a boron atomic thickness dimension and a method for preparation thereof.

Abstract: Methods for the preparation of few-layer phosphorene, compositions thereof and related devices fabricated therefrom.

Abstract: A preferred method of the invention separates metallic or charged nanostructures in solution. In preferred embodiments, metal and semiconducting nanostructures are separated in solution with use of a net Lorentz force applied to metallic or conductive nanostructures. In other embodiments, charged nanostructures are separated from other nanostructures in solution. The charge can be applied to semiconducting or insulating nanostructures of a predetermined size by application of appropriate radiation. The method is conducted on dispersed nanostructures suspended in solution in a vessel. The net Lorentz force to metallic, conductive or charged nanostructures within the solution moves the metallic, conductive or charged nanostructures toward a common volume in a portion of the vessel. Extraction of the common volume provides solution with a high ratio of the metallic, conductive or charged nanostructures. The solution left behind has a high ratio of semiconducting or insulating nanostructures.