Abstract: Light emitting diode (LED) light tubes having rotatable end cap assemblies are described. The LED light tubes include a hollow tube and a circuit board with LED chips thereon. The end cap assemblies are provided on either end of the tube. Each end cap assembly includes a socket cap, a plug having a plug body and at least one connector, and an end cap body, one end of which engages one of the ends of the hollow tube. A cam locking mount that is positioned within the plug body and on the opposite side has projections to be positioned in the bore of the end cap body. A rotation cam is seated in the cam locking mount and provides for controlled rotation of the LED tube relative to the end caps. Methods of installing the LED light tubes in new installations and retrofit installations and for use in sign assemblies are also described.

Abstract: Light emitting diode (LED) light tubes having rotatable end cap assemblies are described. The LED light tubes include a hollow tube and a circuit board with LED chips thereon. The end cap assemblies are provided on either end of the tube. Each end cap assembly includes a socket cap, a plug having a plug body and at least one connector, and an end cap body, one end of which engages one of the ends of the hollow tube. A cam locking mount that is positioned within the plug body and on the opposite side has projections to be positioned in the bore of the end cap body. A rotation cam is seated in the cam locking mount and provides for controlled rotation of the LED tube relative to the end caps. Methods of installing the LED light tubes in new installations and retrofit installations and for use in sign assemblies are also described.

Abstract: Light emitting diode (LED) light tubes having rotatable end cap assemblies are described. The LED light tubes include a hollow tube and a circuit board with LED chips thereon. The end cap assemblies are provided on either end of the tube. Each end cap assembly includes a socket cap, a plug having a plug body and at least one connector, and an end cap body, one end of which engages one of the ends of the hollow tube. A cam locking mount that is positioned within the plug body and on the opposite side has projections to be positioned in the bore of the end cap body. A rotation cam is seated in the cam locking mount and provides for controlled rotation of the LED tube relative to the end caps. Methods of installing the LED light tubes in new installations and retrofit installations and for use in sign assemblies are also described.

Abstract: RPCVD apparatus for forming a film is disclosed including a showerhead having at least one gas chamber, one or more plasma inlets to deliver plasma from one or more plasma generators into a reaction chamber; and a plurality of gas inlets to deliver gas from at least one gas chamber into the reaction chamber. At least one of the plasma inlets is located at a position that is between a central region and an outer region of the showerhead and off-centre from an axis of rotation. The plasma generators generate plasma in line of sight of the susceptor and the plasma inlets have openings that are larger than openings of the gas inlets. The gas inlets are configured such that a combination of all of the spatial distributions of gas from the gas inlets provides a uniform distribution of gas density on the surface of a susceptor between a central region and an outer region of the susceptor, for a full rotation of the susceptor.

Abstract: Light emitting diode (LED) light tubes having rotatable end cap assemblies are described. The LED light tubes include a hollow tube and a circuit board with LED chips thereon. The end cap assemblies are provided on either end of the tube. Each end cap assembly includes a socket cap, a plug having a plug body and at least one connector, and an end cap body, one end of which engages one of the ends of the hollow tube. A cam locking mount that is positioned within the plug body and on the opposite side has projections to be positioned in the bore of the end cap body. A rotation cam is seated in the cam locking mount and provides for controlled rotation of the LED tube relative to the end caps. Methods of installing the LED light tubes in new installations and retrofit installations and for use in sign assemblies are also described.

Abstract: Light emitting diode (LED) light tubes having rotatable end cap assemblies are described. The LED light tubes include a hollow tube and a circuit board with LED chips thereon. The end cap assemblies are provided on either end of the tube. Each end cap assembly includes a socket cap, a plug having a plug body and at least one connector, and an end cap body, one end of which engages one of the ends of the hollow tube. A cam locking mount that is positioned within the plug body and on the opposite side has projections to be positioned in the bore of the end cap body. A rotation cam is seated in the cam locking mount and provides for controlled rotation of the LED tube relative to the end caps. Methods of installing the LED light tubes in new installations and retrofit installations and for use in sign assemblies are also described.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: Light emitting diode (LED) light tubes having rotatable end cap assemblies are described. The LED light tubes include a hollow tube and a circuit board with LED chips thereon. The end cap assemblies are provided on either end of the tube. Each end cap assembly includes a socket cap, a plug having a plug body and at least one connector, and an end cap body, one end of which engages one of the ends of the hollow tube. A cam locking mount that is positioned within the plug body and on the opposite side has projections to be positioned in the bore of the end cap body. A rotation cam is seated in the cam locking mount and provides for controlled rotation of the LED tube relative to the end caps. Methods of installing the LED light tubes in new installations and retrofit installations and for use in sign assemblies are also described.

Abstract: Light emitting diode (LED) light tubes having rotatable end caps assemblies are described. The LED light tubes include a hollow tube and a circuit board with LED chips thereon. The rotatable end cap assemblies are provided on either end of the tube. Each rotatable end cap assembly includes a socket cap, a plug having a plug body and at least one connector, and an end cap body, one end of which engages one of the ends of the hollow tube. A cam locking mount is positioned within the plug body and on the opposite side has projections to be positioned in the bore of the end cap body. A rotation cam is seated in the cam locking mount and provides for controlled rotation of the LED tube relative to the end caps. Methods of installing the LED light tubes in new installations and retrofit installations and for use in sign assemblies are also described.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: LED light tubes are described herein which have rotatable end caps. The LED light tubes have a hollow tube, a circuit board with LED chips thereon installed on the hollow tube, and rotatable end cap assemblies on either end of the tube, wherein each rotatable end cap assembly includes a socket cap, a plug having a plug body and at least one connector, a rotatable end cap having an end cap body one end of which engages one of the ends of the hollow tube and the other end of which has a surface defining a recess, at least one bore extending through the rotatable end cap defining a passageway, and a collar situated between the inner surface of the rotatable end cap and the longitudinally extending bore. The plug body is received at least partially within one end of the rotatable end cap.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.