Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may access a group of memory cells (e.g., portion of an array configurable to store ECC parity bits) otherwise reserved for ECC functionality of a memory device. The memory device may include a register to indicate whether its ECC functionality is enabled or disabled. When the register indicates the ECC functionality is disabled, the memory device may increase a storage capacity available to the host device by making the group of memory cells available for user-accessible data. Additionally or alternatively, the memory device may store metadata associated with various operational aspects of the memory device in the group of memory cells. Moreover, the memory device may modify a burst length to accommodate additional information to be stored in or read from the group of memory cells.

Abstract: Memory devices and systems with partial array refresh control over memory regions in a memory array, and associated methods, are disclosed herein. In one embodiment, a memory device includes a memory array having a first memory region and a second memory region. The memory device is configured to write data to the memory array in accordance with a programming sequence by initially writing data to unutilized memory cells of the first memory region before initially writing data to unutilized memory cells of the second memory region. The memory device is further configured to determine that the data stored on the first and/or second memory regions is not consolidated, and to consolidate at least a portion of the data by rewriting the portion of the data to physically or logically contiguous memory cells of the first memory region and/or the second memory region.

Abstract: An apparatus including a test validation circuit and associated systems and methods are disclosed herein. The apparatus may include a self-test circuit configured to implement at least a portion of a self-test process that determines operating conditions of the apparatus. The test validation circuit may be configured to generate a flag based on comparing (1) an input stream or a portion thereof associated with the self-test to (2) test data associated with the self-test. The flag may represent a validity associated with the implementation of the self-test process or the portion thereof.

Abstract: A memory device may include sideband circuitry to provide additional functionality without interfering with normal operations of the memory device. The memory device may also include sideband pins to provide sideband information to an external device. The sideband information may include various digital or analog signals. In some cases, a sideband circuit of the memory device may use a data protocol for communicating the sideband information with the external device. Furthermore, systems and methods for receiving sideband information from multiple memory devices of a memory system are described to reduce latency and increase functionality of a memory system including such memory devices.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may directly access a portion of memory array that is otherwise reserved for ECC functionality of a memory device. The memory array may correspond to a set of memory addresses, where each memory address of the set corresponds to a first portion of the memory array (e.g., user data plane) and to a second portion of the memory array (e.g., ECC plane). The second portion may be configured to store ECC data or second user data or metadata based on whether the ECC functionality is enabled or disabled. The memory device may determine a command directed to the memory address of the set is configured to access the first portion or the second portion based on a status of a pin associated with the command.

Abstract: Memory with address-selectable data poisoning circuitry is disclosed herein. In one embodiment, a memory device comprises circuitry operably connected to a memory array. The circuitry can include memory row address registers and/or memory column address registers. Standard access commands or mode register write commands can be used to load a memory row address or a memory column address into the memory row address registers or the memory column address registers, respectively. During a read operation directed to a second memory row and/or column of the memory array, the circuitry can compare the second memory row to the first memory row and/or the second memory column to the first memory column, and can poison a data bit read from the memory array before the data bit is output from the memory device when the first and second memory row addresses match and/or when the first and second memory column addresses match.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may access a group of memory cells (e.g., portion of an array configurable to store ECC parity bits) otherwise reserved for ECC functionality of a memory device. The memory device may include a register to indicate whether its ECC functionality is enabled or disabled. When the register indicates the ECC functionality is disabled, the memory device may increase a storage capacity available to the host device by making the group of memory cells available for user-accessible data. Additionally or alternatively, the memory device may store metadata associated with various operational aspects of the memory device in the group of memory cells. Moreover, the memory device may modify a burst length to accommodate additional information to be stored in or read from the group of memory cells.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to poison data based on an indication provided by a host device coupled with the memory devices. The indication may include which one or more bits to poison (invert) at which stages of performing write or read operations. In some embodiments, the memory device may invert one or more bits according to the indication and then correct one or more errors associated with inverting the one or more bit to verify its on-die ECC functionality. In some embodiments, the memory device may provide the host device with poisoned data including one or more bits inverted according to the indication such that the host device may test system-level ECC functionality using the poisoned data.

Abstract: An apparatus including a test validation circuit and associated systems and methods are disclosed herein. The apparatus may include a self-test circuit configured to implement at least a portion of a self-test process that determines operating conditions of the apparatus. The test validation circuit may be configured to generate a flag based on comparing (1) an input stream or a portion thereof associated with the self-test to (2) test data associated with the self-test. The flag may represent a validity associated with the implementation of the self-test process or the portion thereof.

Abstract: Memory with partial bank refresh is disclosed herein. In one embodiment, a memory system includes a memory controller and a memory device operably connected to the memory controller. The memory device includes (i) a memory array having a memory bank with a plurality of memory cells arranged in a plurality of memory rows and (ii) circuitry. In some embodiments, the circuitry is configured to disable at least one memory row of the memory bank from receiving refresh commands such that memory cells of the at least one memory row are not refreshed during refresh operations of the memory device. In some embodiments, the memory controller is configured to track memory rows that include utilized memory cells and/or to write data to the memory rows in accordance with a programming sequence of the memory device.

Abstract: Memory devices and systems with configurable die refresh stagger, and associated methods, are disclosed herein. In one embodiment, a memory system includes two or more memory dies. At least one memory die includes a fuse array storing refresh information that specifies a refresh group of the memory die. In these and other embodiments, at least one memory die includes a refresh group terminal and refresh group detect circuitry electrically connected to the refresh group terminal. The at least one memory die is configured to detect a refresh group of the memory die and to delay its refresh operation by a time delay corresponding to the refresh group. In this manner, refresh operations of the two or more memory dies can be staggered to reduce peak current demand of the memory system.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to poison data based on an indication provided by a host device coupled with the memory devices. The indication may include which one or more bits to poison (invert) at which stages of performing write or read operations. In some embodiments, the memory device may invert one or more bits according to the indication and then correct one or more errors associated with inverting the one or more bit to verify its on-die ECC functionality. In some embodiments, the memory device may provide the host device with poisoned data including one or more bits inverted according to the indication such that the host device may test system-level ECC functionality using the poisoned data.

Abstract: A memory device may include a phase driver circuit that may output a first voltage for refreshing a plurality of memory cells. The memory device may also include a plurality of word line driver circuits that may receive the first voltage via the phase driver circuit, such that each word line driver circuit of the plurality of word line driver circuits may provide the first voltage to a respective word line associated with a respective portion of the plurality of memory cells. In addition, each word line driver circuit may refresh the respective portion of the plurality of memory cells based on a respective word line enable signal provided to a first switch of the respective word line driver circuit.

Abstract: Memory devices and systems with configurable die refresh stagger, and associated methods, are disclosed herein. In one embodiment, a memory system includes two or more memory dies. At least one memory die includes a fuse array storing refresh information that specifies a refresh group of the memory die. In these and other embodiments, at least one memory die includes a refresh group terminal and refresh group detect circuitry electrically connected to the refresh group terminal. The at least one memory die is configured to detect a refresh group of the memory die and to delay its refresh operation by a time delay corresponding to the refresh group. In this manner, refresh operations of the two or more memory dies can be staggered to reduce peak current demand of the memory system.

Abstract: Memory devices and systems with partial array refresh control over memory regions in a memory array, and associated methods, are disclosed herein. In one embodiment, a memory device includes a memory array having a first memory region and a second memory region. The memory device is configured to write data to the memory array in accordance with a programming sequence by initially writing data to unutilized memory cells of the first memory region before initially writing data to unutilized memory cells of the second memory region. The memory device is further configured to determine that the data stored on the first and/or second memory regions is not consolidated, and to consolidate at least a portion of the data by rewriting the portion of the data to physically or logically contiguous memory cells of the first memory region and/or the second memory region.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to poison data based on an indication provided by a host device coupled with the memory devices. The indication may include which one or more bits to poison (invert) at which stages of performing write or read operations. In some embodiments, the memory device may invert one or more bits according to the indication and then correct one or more errors associated with inverting the one or more bit to verify its on-die ECC functionality. In some embodiments, the memory device may provide the host device with poisoned data including one or more bits inverted according to the indication such that the host device may test system-level ECC functionality using the poisoned data.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may directly access a portion of memory array that is otherwise reserved for ECC functionality of a memory device. The memory array may correspond to a set of memory addresses, where each memory address of the set corresponds to a first portion of the memory array (e.g., user data plane) and to a second portion of the memory array (e.g., ECC plane). The second portion may be configured to store ECC data or second user data or metadata based on whether the ECC functionality is enabled or disabled. The memory device may determine a command directed to the memory address of the set is configured to access the first portion or the second portion based on a status of a pin associated with the command.

Abstract: Methods, systems, and devices for refresh-related activation in memory are described. A memory device may conduct a refresh operation to preserve the integrity of data. A refresh operation may be associated with a refresh time where the memory device is unable to execute or issue any commands (e.g., access commands). By posting (e.g., saving) one or more commands and/or row addresses during the refresh time, the memory device may be configured to execute the saved commands and/or re-open one or more rows associated with the saved row addresses at a later time (e.g., upon completion of the refresh operation). Accordingly, fewer commands may be issued to activate the memory cells after the refresh time.

Abstract: Memory devices and systems with partial array refresh control over memory regions in a memory array, and associated methods, are disclosed herein. In one embodiment, a memory device includes a memory array having a first memory region and a second memory region. The memory device is configured to write data to the memory array in accordance with a programming sequence by initially writing data to unutilized memory cells of the first memory region before initially writing data to unutilized memory cells of the second memory region. The memory device is further configured to determine that the data stored on the first and/or second memory regions is not consolidated, and to consolidate at least a portion of the data by rewriting the portion of the data to physically or logically contiguous memory cells of the first memory region and/or the second memory region.

Abstract: Memory devices and systems with configurable die powerup delay, and associated methods, are disclosed herein. In one embodiment, a memory system includes two or more memory dies. At least one memory die has a powerup group terminal and powerup group detect circuitry. The powerup group detect circuitry is configured to detect a powerup group assigned to the at least one memory die. The at least one memory die is configured to delay its powerup operation by a time delay corresponding to the powerup group to which it is assigned. In this manner, powerup operations of the two or more memory dies can be staggered to reduce peak current demand of the memory system.