Abstract: Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(?-X)2M?X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(?-ER)2M?(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M? is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(?-ER)2M?(ER)2 or L2N(?-X)2M?(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

Abstract: Hybrid particles that comprise a coating surrounding a chalcopyrite material, the coating comprising a metal, a semiconductive material, or a polymer; a core comprising a chalcopyrite material and a shell comprising a functionalized chalcopyrite material, the shell enveloping the core; or a reaction product of a chalcopyrite material and at least one of a reagent, heat, and radiation. Methods of forming the hybrid particles are also disclosed.

Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(?-X)2M?X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(?-ER)2M?(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M? is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(?-ER)2M?(ER)2 or L2N(?-X)2M?(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(?-X)2M?X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(?-ER)2M?(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M? is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(?-ER)2M?(ER)2 or L2N(?-X)2M?(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

Abstract: Hybrid particles that comprise a coating surrounding a chalcopyrite material, the coating comprising a metal, a semiconductive material, or a polymer; a core comprising a chalcopyrite material and a shell comprising a functionalized chalcopyrite material, the shell enveloping the core; or a reaction product of a chalcopyrite material and at least one of a reagent, heat, and radiation. Methods of forming the hybrid particles are also disclosed.

Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(?-X)2M?X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(?-ER)2M?(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M? is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(?-ER)2M?(ER)2 or L2N(?-X)2M?(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

Abstract: Methods of forming photoactive devices include infiltrating pores of a solid porous ceramic material with a fluid, which may be a supercritical fluid, carrying at least one single source precursor therein. The single source precursor may be decomposed to form a plurality of particles within the pores of the solid porous ceramic material. Photoactive devices include a solid porous ceramic material exhibiting electrical conductivity, and a plurality of photoactive semiconductor particles within pores of the solid porous ceramic material.

Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(?-X)2M?X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(?-ER)2M?(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M? is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(?-ER)2M?(ER)2 or L2N(?-X)2M?(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

Abstract: Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(?-X)2M?X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(?-ER)2M?(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M? is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(?-ER)2M?(ER)2 or L2N(?-X)2M?(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

Abstract: CuInS2 nanoparticles have been prepared from single source precursors via microwave irradiation. Also, CuInGaS2 alloy nanoparticles have been prepared. Microwave irradiation methods have allowed an increase in the efficiency of preparation of these materials by providing increased uniformity of heating and shorter reaction times. Nanoparticle growth has been controlled in the about 1 to 5 nm size range by variation of thiolated capping ligand concentrations as well as reaction temperatures and times. Investigation of the photophysical properties of the colloidal nanoparticles has been performed using electronic absorption and luminescence emission spectroscopy. Qualitative nanoparticles sizes have been determined from the photoluminescence (PL) data and compared to TEM images.

Abstract: CuInS2 nanoparticles have been prepared from single source precursors via microwave irradiation. Also, CuInGaS2 alloy nanoparticles have been prepared. Microwave irradiation methods have allowed an increase in the efficiency of preparation of these materials by providing increased uniformity of heating and shorter reaction times. Nanoparticle growth has been controlled in the about 1 to 5 nm size range by variation of thiolated capping ligand concentrations as well as reaction temperatures and times. Investigation of the photophysical properties of the colloidal nanoparticles has been performed using electronic absorption and luminescence emission spectroscopy. Qualitative nanoparticles sizes have been determined from the photoluminescence (PL) data and compared to TEM images.