Abstract: Methods and apparatus for fault isolation with scanning electron microscope probing are disclosed. An example apparatus to test a circuit includes interface circuitry operatively coupled to an electron detector, the electron detector to output a signal corresponding to electron emissions from the circuit as the circuit is driven with a signal source and the circuit is rastered with an electron beam, machine readable instructions, and programmable circuitry to at least one of instantiate or execute the machine readable instructions to demodulate the signal, and generate an image based on the demodulated signal for determination of a condition of the circuit.

Abstract: This disclosure describes systems, methods, and devices related to fault isolation via electron photoemission microscopy (FIVEPM). A system may attach a device under test (DUT) comprising a region of interest (ROI) for fault isolation to a tester device, wherein the DUT is an integrated circuit. The system may pulse an ultraviolet UV beam targeting the ROI on the DUT using a UV laser. The system may capture, using a detector, excited electrons as signals based on the UV beam targeting the ROI. The system may synchronize a time domain electrical signal analyzer to a reference frequency. The system may generate a rastered image associated with the fault isolation.

Abstract: This disclosure describes systems, methods, and devices related to electron beam and nanoprobing techniques with probe tips for fault isolation in integrated circuits. A method may include generating a signal at a circuit device under test while a probe tip electrically interacts with a transistor of the circuit device under test; detecting, based on the signal and the laser at the transistor, an electrical output of the circuit device under test; and identifying, based on the electrical output, a location of a fault at the circuit device under test.