Abstract: In one embodiment, a computing device receives a request for content for a content layout in a displayable region of a screen associated with the system. The device determines, based on application-tailored recycling policies, whether a recycler includes a display object that is suitable for recycling or re-use. If it does not, the device creates the display object and fills it with the content. If it does, and if the display object contains the content, the device updates elements of the display object as needed; otherwise, if the display object does not contain the content, the device fills the display object with the content and returns it. Embodiments described herein may also be performed with sub-elements of a display object, some of which may comprise nested display objects.

Abstract: Various embodiments of the present invention relate to systems, devices, and methods for treating a semiconductor substrate, such as a silicon wafer, in order to reduce current leakage therein. A semiconductor substrate is provided a plurality of heating treatments that create a denuded zone adjacent to a surface of the substrate and a core zone below the denuded zone. Oxygen impurities within the denuded zone are removed through an oxygen out-diffusion heat treatment. A plurality of macroscopic bulk micro defects is generated within the core zone through the combination of an agglomeration heat treatment and a macroscopic growth heat treatment. This plurality of macroscopic bulk micro defects inhibits migration of metallic contaminants that are located within the substrate. For exemplary purposes, certain embodiments are described relating to a semiconductor wafer heated in a sequence of three treatments.

Abstract: Various embodiments of the present invention relate to systems, devices, and methods for treating a semiconductor substrate, such as a silicon wafer, in order to reduce current leakage therein. A semiconductor substrate is provided a plurality of heating treatments that create a denuded zone adjacent to a surface of the substrate and a core zone below the denuded zone. Oxygen impurities within the denuded zone are removed through an oxygen out-diffusion heat treatment. A plurality of macroscopic bulk micro defects is generated within the core zone through the combination of an agglomeration heat treatment and a macroscopic growth heat treatment. This plurality of macroscopic bulk micro defects inhibits migration of metallic contaminants that are located within the substrate. For exemplary purposes, certain embodiments are described relating to a semiconductor wafer heated in a sequence of three treatments.