Abstract: A ternary superlattice structure includes a substrate and periodic layer structure on the substrate and having alternating infrared absorbing semiconductor materials having a first layer of InAs[1-x]Sb[x] ternary alloy material, and a second layer of In[1-y]Z[y]As ternary alloy material, wherein Z is Ga or Al, wherein x is in a range of greater than zero and less than one, wherein y is in a range of greater than zero and less than one, and wherein a thickness of each of the first and second layers are substantially similar and configured to absorb light in a predetermined spectral band and prevent trapping of carriers in any particular layer. In examples, y is in a range from about 0.05 to about 0.35, and x is in a range of about 0.2 to about 0.8.

Abstract: A ternary superlattice structure includes a substrate and periodic layer structure on the substrate and having alternating infrared absorbing semiconductor materials having a first layer of InAs[1-x]Sb[x] ternary alloy material, and a second layer of In[1-y]Z[y]As ternary alloy material, wherein Z is Ga or Al, wherein x is in a range of greater than zero and less than one, wherein y is in a range of greater than zero and less than one, and wherein a thickness of each of the first and second layers are substantially similar and configured to absorb light in a predetermined spectral band and prevent trapping of carriers in any particular layer. In examples, y is in a range from about 0.05 to about 0.35, and x is in a range of about 0.2 to about 0.8.

Abstract: A photodetector includes a detector material having an upper layer, a lower layer, and at least one sidewall. Also included as part of the photodetector are a first contact electrically coupled to the detector material through the upper layer and a second contact electrically coupled to the detector material through the lower layer. Diffused into the sidewall by a passivation process is a dopant material operable to electrically isolate the first contact from the second contact via the sidewall. The dopant material is provided by a passivation layer deposited on the sidewall.

Abstract: A photodetector focal plane array system, comprising: a substrate comprising a plurality of photosensitive regions; and a microcomponent disposed adjacent to each of the plurality of photosensitive regions operable for receiving incident radiation and directing a photonic nanojet into the associated photosensitive region. Optionally, each of the microcomponents comprises one of a microsphere and a microcylinder. Each of the microcomponents has a diameter of between ˜? and ˜100?, where ? is the wavelength of the incident radiation. Each of the microcomponents is manufactured from a dielectric or semiconductor material. Each of the microcomponents has an index of refraction of between ˜1.4 and ˜3.5. Optionally, high-index components can be embedded in a lower index material. The microcomponents form an array of microcomponents disposed adjacent to the substrate.

Abstract: A photodetector focal plane array system, comprising: a substrate comprising a plurality of photosensitive regions; and a microcomponent disposed adjacent to each of the plurality of photosensitive regions operable for receiving incident radiation and directing a photonic nanojet into the associated photosensitive region. Optionally, each of the microcomponents comprises one of a microsphere and a microcylinder. Each of the microcomponents has a diameter of between between ˜? and ˜100?, where ? is the wavelength of the incident radiation. Each of the microcomponents is manufactured from a dielectric or semiconductor material. Each of the microcomponents has an index of refraction of between ˜1.4 and ˜3.5. Optionally, high-index components can be embedded in a lower index material. The microcomponents form an array of microcomponents disposed adjacent to the substrate.