Abstract: A video game controller with a position sensor and a proximity sensor provides user input signals for use in determining game states. The video game controller can have a board or deck like surface similar to that of a skateboard, and the proximity sensor can be used to determine if a grab of the board has been attempted. A video game associated with the video game controller can provide a skateboard or other game in which a skateboard and skateboarding character are responsive to a game player's manipulation of the video game controller.

Abstract: A video game controller with a position sensor and a proximity sensor provides user input signals for use in determining game states. The video game controller can have a board or deck like surface similar to that of a skateboard, and the proximity sensor can be used to determine if a grab of the board has been attempted. A video game associated with the video game controller can provide a skateboard or other game in which a skateboard and skateboarding character are responsive to a game player's manipulation of the video game controller.

Abstract: A method for plasma-cleaning a chamber in a process tool is described. A substrate is placed on a chuck in a process chamber having a set of contaminants therein. A plasma process is executed in the process chamber to transfer the set of contaminants to the top surface of the substrate. The substrate, having the set of contaminants thereon, is removed from the process chamber.

Abstract: There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.

Abstract: In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body.

Abstract: In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body.

Abstract: There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.