Abstract: Systems and methods for retaining data related to a detected collision are disclosed including receiving vehicle information from a sensor, receiving information about one or more other vehicles using a communication circuit, receiving an indication of a detected collision, and responsive to the received indication of the detected collision, storing information corresponding to the detected collision from a collision reenactment period in non-volatile memory of the first vehicle and broadcasting the information corresponding to the detected collision using the communication circuit.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple with conductor material of the conductor tier by conducting material that is in a lowest of the conductive tiers and that is directly against multiple of the channel-material strings. A through-array-via (TAV) region comprises TAVs that individually extend through the lowest conductive tier and into the conductor tier. Individual of the TAVs in the lowest conductive tier comprise a conductive core having an annulus circumferentially there-about. The annulus has dopant therein at a total dopant concentration of 0.01 to 30 atomic percent.

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the methods includes forming levels of materials one over another; forming a first opening and a second opening in the levels of materials; forming at least one dielectric material in the first and second openings; forming tiers of materials over the levels of materials and over the dielectric material in the first and second openings; forming a first pillar of a memory cell string, the first pillar extending through the tiers of materials and extending partially into a location of the first opening; and forming a second pillar of a contact structure, the second pillar extending through the tiers of materials and through a location of the second opening.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple with conductor material of the conductor tier by conducting material that is in a lowest of the conductive tiers and that is directly against multiple of the channel-material strings. A through-array-via (TAV) region comprises TAVs that individually extend through the lowest conductive tier and into the conductor tier. Individual of the TAVs in the lowest conductive tier comprise a conductive core having an annulus circumferentially there-about. The annulus has dopant therein at a total dopant concentration of 0.01 to 30 atomic percent.