Patents by Inventor Joshua Yang

Joshua Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NONVOLATILE MEMORY CROSSBAR ARRAY
    Publication number: 20170271410
    Abstract: Provided in one example is a nonvolatile memory crossbar array. The array includes a number of junctions formed by a number of row lines intersecting a number of column lines; and a resistive memory element in series with a selector at each of the junctions coupling between one of the row lines and one of the column lines. The selector may be a volatile switch including: a bottom electrode; an oxide layer disposed over the bottom electrode, the oxide layer including Cu2O; and a top electrode disposed over the oxide layer.
    Type: Application
    Filed: February 11, 2015
    Publication date: September 21, 2017
    Inventors: Minxian Max Zhang, Kathryn Samuels, Jianhua Joshua Yang, R. Stanley Williams, Zhiyong Li
  • Graphene memristor having modulated graphene interlayer conduction
    Patent number: 8294132
    Abstract: A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: October 23, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Feng Miao, Joshua Yang, Wei Wu, Shih-Yuan Wang, R. Stanley Williams
  • Defective graphene-based memristor
    Patent number: 8203171
    Abstract: A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer.
    Type: Grant
    Filed: April 5, 2010
    Date of Patent: June 19, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Joshua Yang, Feng Miao, Wei Wu, Shih-Yuan Wang, R. Stanley Williams
  • Defective Graphene-Based Memristor
    Publication number: 20110240947
    Abstract: A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer.
    Type: Application
    Filed: April 5, 2010
    Publication date: October 6, 2011
    Inventors: Joshua Yang, Feng Miao, Wei Wu, Shih-Yuan Wang, R. Stanley Williams
  • Graphene Memristor Having Modulated Graphene Interlayer Conduction
    Publication number: 20110240946
    Abstract: A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field.
    Type: Application
    Filed: March 30, 2010
    Publication date: October 6, 2011
    Inventors: Feng Miao, Joshua Yang, Wei Wu, Shih-Yuan Wang, R. Stanley Williams
  • Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers
    Patent number: 7450352
    Abstract: This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.
    Type: Grant
    Filed: June 28, 2005
    Date of Patent: November 11, 2008
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Y. Austin Chang, Jianhua Joshua Yang