Patents by Inventor Josip Zilak

Josip Zilak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HORIZONTAL CURRENT BIPOLAR TRANSISTOR WITH SILICON-GERMANIUM BASE
    Publication number: 20230395666
    Abstract: A semiconductor device including a Horizontal Current Bipolar Transistor (HCBT) and methods of manufacture. The device has a semiconductor substrate of a first conductivity type defining a wafer plane parallel to the semiconductor substrate and has a base region and a collector region forming a first metallurgical junction. The device also has an emitter region forming a second metallurgical junction with the base region. A flat portion of the first metallurgical junction and a flat portion of the second metallurgical junction are substantially parallel to each other and close an acute angle with the wafer plane. At least a portion of the base region comprises silicon-germanium alloy or silicon-germanium-carbon alloy.
    Type: Application
    Filed: July 10, 2023
    Publication date: December 7, 2023
    Inventors: Tomislav Suligoj, Marko Koricic, Josip Zilak, Zeljko Osrecki
  • Horizontal current bipolar transistor with silicon-germanium base
    Patent number: 11721726
    Abstract: A semiconductor device including a Horizontal Current Bipolar Transistor (HCBT) and methods of manufacture. The device has a semiconductor substrate of a first conductivity type defining a wafer plane parallel to the semiconductor substrate and has a base region and a collector region forming a first metallurgical junction. The device also has an emitter region forming a second metallurgical junction with the base region. A flat portion of the first metallurgical junction and a flat portion of the second metallurgical junction are substantially parallel to each other and close an acute angle with the wafer plane. At least a portion of the base region comprises silicon-germanium alloy or silicon-germanium-carbon alloy.
    Type: Grant
    Filed: August 4, 2021
    Date of Patent: August 8, 2023
    Assignee: University of Zagreb, Faculty of Electrical Engineering and Computing
    Inventors: Tomislav Suligoj, Marko Koricic, Josip Zilak, Zeljko Osrecki
  • HORIZONTAL CURRENT BIPOLAR TRANSISTOR WITH SILICON-GERMANIUM BASE
    Publication number: 20220045174
    Abstract: A semiconductor device including a Horizontal Current Bipolar Transistor (HCBT) and methods of manufacture. The device has a semiconductor substrate of a first conductivity type defining a wafer plane parallel to the semiconductor substrate and has a base region and a collector region forming a first metallurgical junction. The device also has an emitter region forming a second metallurgical junction with the base region. A flat portion of the first metallurgical junction and a flat portion of the second metallurgical junction are substantially parallel to each other and close an acute angle with the wafer plane. At least a portion of the base region comprises silicon-germanium alloy or silicon-germanium-carbon alloy.
    Type: Application
    Filed: August 4, 2021
    Publication date: February 10, 2022
    Applicant: University of Zagreb
    Inventors: Tomislav Suligoj, Marko Koricic, Josip Zilak, Zeljko Osrecki