Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A method, comprising: detecting an outage of at least one functionality in a live streaming; performing an first operation toward a second user terminal; storing data of the first operation in a database of the first user terminal; and displaying an effect corresponding to the first operation during the outage. The present disclosure may store the data of operation performed by the user terminal during outage and process the operation after the outage is recovered. Therefore, the streamers and viewers may feel interested and satisfied, instead of feeling anxious, and the user experience may be enhanced.

Abstract: An image display method, comprising the following steps: receiving an image signal from a graphics processor by an image processor, wherein the image signal is configured to drive a display panel to display a main image; enlarging a target area in the main image to form a first enlarged image according to an enlargement command; modifying the first enlarged image into a non-rectangular image to use the non-rectangular image as a second enlarged image; and driving the display panel to display the main image and the second enlarged image simultaneously by the image processor, wherein the second enlarged image is overlapped on the main image.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A control circuit applied to a display includes a receiving interface, an image processing circuit, and a backlight control circuit. The receiving interface is arranged to receive an image data from an image source, wherein the image data has an unfixed frame rate. The image processing circuit is arranged to receive the image data from the receiving interface and determine a frame rate of the image data. The backlight control circuit is arranged to generate a control signal to a display panel according to the frame rate, to control brightness of a backlight module of the display panel.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate and a top electrode on the MTJ; forming a first inter-metal dielectric (IMD) layer around the MTJ and the top electrode; forming a stop layer on the first IMD layer; forming a second IMD layer on the stop layer; performing a first etching process to remove the second IMD layer and the stop layer; performing a second etching process to remove part of the top electrode; and forming a metal interconnection to connect to the top electrode.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate and a top electrode on the MTJ; forming a first inter-metal dielectric (IMD) layer around the MTJ and the top electrode; forming a stop layer on the first IMD layer; forming a second IMD layer on the stop layer; performing a first etching process to remove the second IMD layer and the stop layer; performing a second etching process to remove part of the top electrode; and forming a metal interconnection to connect to the top electrode.

Abstract: A control circuit applied to a display includes a receiving interface, an image processing circuit, and a backlight control circuit. The receiving interface is arranged to receive an image data from an image source, wherein the image data has an unfixed frame rate. The image processing circuit is arranged to receive the image data from the receiving interface and determine a frame rate of the image data. The backlight control circuit is arranged to generate a control signal to a display panel according to the frame rate, to control brightness of a backlight module of the display panel.

Abstract: The present invention provides a circuit having a filter with an amplifier circuit for filtering and amplifying an input signal to generate an output signal, wherein a corner frequency of the filter is adjustable to control a settling time of the output signal.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate and a top electrode on the MTJ; forming a first inter-metal dielectric (IMD) layer around the MTJ and the top electrode; forming a stop layer on the first IMD layer; forming a second IMD layer on the stop layer; performing a first etching process to remove the second IMD layer and the stop layer; performing a second etching process to remove part of the top electrode; and forming a metal interconnection to connect to the top electrode.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: The present invention provides a circuit having a filter with an amplifier circuit for filtering and amplifying an input signal to generate an output signal, wherein a corner frequency of the filter is adjustable to control a settling time of the output signal.

Abstract: This algorithm provides a marker-free approach to establishing the pixel correspondence among the IR images taken at different times, which is the basis for quantitatively characterizing the variation of the heat energy and patterns pixel-wise on a breast surface. The idea is to use the corner points of the heat pattern and the branch points of the skeletons of the heat pattern on the body surface as the initial fiducial points for the longitudinal IR image registration. The Thin-Plate Spline technique is used to model the nonlinear deformation between two IR images taken at two different times. Mutual information between the TPS-transformed image and the target image is employed as the metric quantifying the quality of the longitudinal IR image registration. To optimize the registration, Nelder-Mead simplex method is used to locally modify the pairings of the fiducial points in the source and target IR images to maximize the mutual information.

Abstract: It is developed a Dual-Spectrum Heat Pattern Separation (DS-HPS) algorithm to quantify the energy from the area of the high temperature tissues, called qH map, and decompose the body surface into the high and normal temperature areas based on a pair of middle-wave Infra-red images and long-wave Infra-red images. Further, with longitudinal registration, we can detect the cancerous tissues and assess the chemotherapy treatment response on a pixel by pixel basis according to the change of the qH map derived by the DS-HPS algorithm. The preliminary result shows the area and the qH values in the high temperature area are decreased as the patients receive more chemotherapy. These suggest the proposed algorithm could capture the incremental or decremental of the energies emitted by the cancerous tissues, which has the potentials for chemotherapy assessment and early detection.

Abstract: Infra-red images of tumors carry the information of normal and cancerous tissues in every pixel. We developed a Dual-Spectrum Heat Pattern Separation (DS-HPS) algorithm to quantify the energy from the area of the high temperature tissues, called qH map, and decompose the body surface into the high and normal temperature areas based on a pair of middle-wave Infra-red images and long-wave Infra-red images. Further, with longitudinal registration, we can detect the cancerous tissues and assess the chemotherapy treatment response on a pixel by pixel basis according to the change of the qH map derived by the DS-HPS algorithm. The preliminary result shows the area and the qH values in the high temperature area are decreased as the patients receive more chemotherapy. These suggest the proposed algorithm could capture the incremental or decremental of the energies emitted by the cancerous tissues, which has the potentials for chemotherapy assessment and early detection.

Abstract: A steel bar connector includes two adapter members each having an arched inner wall fitting the periphery of two reinforcing steel bars that are abutted end-to-end against each other, inner threads located on the arched inner wall and engaged with the outer threads of the reinforcing bars and a positioning block protruded from the outside wall thereof at one end, and a socket for attaching onto the adapter members to hold down the adapter members and the reinforcing steel bars together. The socket defines two opposing longitudinal ribs protruded from the inside wall thereof, two longitudinal half-round grooves separated by the longitudinal ribs for accommodating the adapter members respectively and a positioning groove located on one end of each longitudinal half-round groove for the engagement with the positioning block of each of the adapter members.

Abstract: A cam-action remote latch mechanism comprises a housing; a support, placed inside the housing, being able to perform a movement between an innermost position and an outermost position; a plurality of guiding openings in the housing for guiding the movement of the support; a cam, set on a primary axis and placed inside the housing, when turned driving the movement of the support; and a pawl, mounted on an outer side of the support, protruding from the housing when the support has reached the outermost position and exerting a sealing force driven by the support, with the cam and the support stably holding each other.

Abstract: A cam-type remote latch mechanism comprises a housing; a support, placed inside the housing, being able to perform a movement between an innermost position and an outermost position; a plurality of guiding openings in the housing for guiding the movement of the support; a cam, set on a primary axis and placed inside the housing, when turned driving the movement of the support; and a pawl, mounted on an outer side of the support, protruding from said housing when said support has reached said outermost position and exerting a sealing force driven by said support, with the cam and the support stably holding each other.