Abstract: The aspects of the disclosed embodiments relates to an optoelectronic device including a substrate layer having a first surface plane and a second surface plane opposite and parallel to the first surface plane. The device also includes a mesa structure arranged on the first surface plane of the substrate layer. The mesa structure includes at least one layer of material; and a first surface arranged at an angle ? with respect to the first surface plane of the substrate layer, wherein the angle ? is different from 0° and 180°. The device still further includes a first terminating oxide layer of a first type arranged on the first surface of the mesa structure and the first surface of the mesa structure has been cleaned by removing at least 75% of native oxides on the first surface of the mesa structure before arranging the first terminating oxide layer of a first type thereon.

Abstract: The present disclosure is related to a semiconductor device and a method of manufacturing the said semiconductor device. The semiconductor device comprising a stacked configuration of a plurality of semiconductor layers. At least one of the semiconductor layers is a III-V compound semiconductor layer, and at least one of the III-V compound semiconductor layers has formed thereonto a corresponding crystalline terminating oxide layer, wherein the at least one of the plurality of semiconductor layers interfaces via its crystalline terminating oxide layer to a neighbouring epitaxial semiconductor layer thereto. The semiconductor device is a quantum well device.

Abstract: Disclosed is a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device comprises a first III-V compound semiconductor layer having a first material structure, a second semiconductor layer having a second material structure and a third semiconductor layer having a third material structure. An interface between the first semiconductor layer and the second semiconductor layer consists of at least one corresponding crystalline terminating oxide layer of the first semiconductor layer, and an interface between the second semiconductor layer and the third semiconductor layer comprises at least one corresponding crystalline terminating oxide layer of a III-V compound semiconductor layer.

Abstract: Disclosed is a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device comprises a first III-V compound semiconductor layer having a first material structure, a second semiconductor layer having a second material structure and a third semiconductor layer having a third material structure. An interface between the first semiconductor layer and the second semiconductor layer consists of at least one corresponding crystalline terminating oxide layer of the first semiconductor layer, and an interface between the second semiconductor layer and the third semiconductor layer comprises at least one corresponding crystalline terminating oxide layer of a III-V compound semiconductor layer.

Abstract: Disclosed is a semiconductor device and a method of manufacturing the said semiconductor device. The semiconductor device comprises a plurality of layers. The method of fabricating the semiconductor device comprises obtaining a substrate layer, arranging a first corresponding crystalline terminating oxide layer on the substrate layer, arranging at least one semiconductor layer on the first crystalline terminating oxide layer, arranging a second corresponding crystalline terminating oxide layer on the at least one semiconductor layer, and arranging an electrical insulating layer on the second crystalline terminating oxide layer.

Abstract: Disclosed is a semiconductor device and a method of manufacturing the said semiconductor device. The semiconductor device comprises a plurality of layers. The method of fabricating the semiconductor device comprises obtaining a substrate layer, arranging a first corresponding crystalline terminating oxide layer on the substrate layer, arranging at least one semiconductor layer on the first crystalline terminating oxide layer, arranging a second corresponding crystalline terminating oxide layer on the at least one semiconductor layer, and arranging an electrical insulating layer on the second crystalline terminating oxide layer.

Abstract: The present disclosure is related to a semiconductor device and a method of manufacturing the said semiconductor device. The semiconductor device comprising a stacked configuration of a plurality of semiconductor layers. At least one of the semiconductor layers is a III-V compound semiconductor layer, and at least one of the III-V compound semiconductor layers has formed thereonto a corresponding crystalline terminating oxide layer, wherein the at least one of the plurality of semiconductor layers interfaces via its crystalline terminating oxide layer to a neighbouring epitaxial semiconductor layer thereto. The semiconductor device is a quantum well device.

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract: In an embodiment, a foldable device having a sensor is described. In an embodiment, the device comprises: A folding area, wherein the folding area is configured to rotate according to an axis of rotation caused by folding the device, causing deformation of the folding area. The folding area comprises: a layer of strain sensitive material having particles, wherein conductivity of the strain sensitive material is configured to change when the layer experiences the deformation. The folding area comprises a layer of conductor lines configured to detect the change of the conductivity of the strain sensitive material, wherein the layer of the conductor lines includes a plurality of contacting points with the strain sensitive material.

Abstract: A display integrated pressure sensor is described. In an example, a device comprises: a display including a plurality of layers; a layer of pressure sensitive material having particles; conductivity of the pressure sensitive material is configured to change when the layer experiences deformation; a layer of conductor lines configured to detect the change of the conductivity of the pressure sensitive material; the layer of conductor lines includes a plurality of contacting points with the pressure sensitive material; the layer of pressure sensitive material and the conductor lines are configured to be integrated within the display. In other examples, a manufacturing method and a display module are discussed along with the features of the device.

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract: A device, a display and a system are disclosed, all having a display with touch sensing capability. The display senses an object touching the surface of the display and emits light towards the touching object. The light reflects back from the object and travels back through the display to a light detector layer underneath the display stack. The light sensing layer is attached to the display stack with a transparent adhesive that maintains the fingerprint details detectable when the light travels back from the object. The light detector layer may replace the back layer of the display stack. The light detector layer may be applied in various devices having a touch sensing display. The light detector layer may be modular addition to displays in different applications that use identification.

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract: In an embodiment, a foldable device having a sensor is described. In an embodiment, the device comprises: A folding area, wherein the folding area is configured to rotate according to an axis of rotation caused by folding the device, causing deformation of the folding area. The folding area comprises: a layer of strain sensitive material having particles, wherein conductivity of the strain sensitive material is configured to change when the layer experiences the deformation. The folding area comprises a layer of conductor lines configured to detect the change of the conductivity of the strain sensitive material, wherein the layer of the conductor lines includes a plurality of contacting points with the strain sensitive material.

Abstract: A display integrated pressure sensor is described. In an example, a device comprises: a display including a plurality of layers; a layer of pressure sensitive material having particles; conductivity of the pressure sensitive material is configured to change when the layer experiences deformation; a layer of conductor lines configured to detect the change of the conductivity of the pressure sensitive material; the layer of conductor lines includes a plurality of contacting points with the pressure sensitive material; the layer of pressure sensitive material and the conductor lines are configured to be integrated within the display. In other examples, a manufacturing method and a display module are discussed along with the features of the device.

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.