Abstract: The present disclosure is related to a semiconductor device and a method of manufacturing the said semiconductor device. The semiconductor device comprising a stacked configuration of a plurality of semiconductor layers. At least one of the semiconductor layers is a III-V compound semiconductor layer, and at least one of the III-V compound semiconductor layers has formed thereonto a corresponding crystalline terminating oxide layer, wherein the at least one of the plurality of semiconductor layers interfaces via its crystalline terminating oxide layer to a neighbouring epitaxial semiconductor layer thereto. The semiconductor device is a quantum well device.

Abstract: Disclosed is a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device comprises a first III-V compound semiconductor layer having a first material structure, a second semiconductor layer having a second material structure and a third semiconductor layer having a third material structure. An interface between the first semiconductor layer and the second semiconductor layer consists of at least one corresponding crystalline terminating oxide layer of the first semiconductor layer, and an interface between the second semiconductor layer and the third semiconductor layer comprises at least one corresponding crystalline terminating oxide layer of a III-V compound semiconductor layer.

Abstract: Disclosed is a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device comprises a first III-V compound semiconductor layer having a first material structure, a second semiconductor layer having a second material structure and a third semiconductor layer having a third material structure. An interface between the first semiconductor layer and the second semiconductor layer consists of at least one corresponding crystalline terminating oxide layer of the first semiconductor layer, and an interface between the second semiconductor layer and the third semiconductor layer comprises at least one corresponding crystalline terminating oxide layer of a III-V compound semiconductor layer.

Abstract: Disclosed is a semiconductor device and a method of manufacturing the said semiconductor device. The semiconductor device comprises a plurality of layers. The method of fabricating the semiconductor device comprises obtaining a substrate layer, arranging a first corresponding crystalline terminating oxide layer on the substrate layer, arranging at least one semiconductor layer on the first crystalline terminating oxide layer, arranging a second corresponding crystalline terminating oxide layer on the at least one semiconductor layer, and arranging an electrical insulating layer on the second crystalline terminating oxide layer.

Abstract: Disclosed is a semiconductor device and a method of manufacturing the said semiconductor device. The semiconductor device comprises a plurality of layers. The method of fabricating the semiconductor device comprises obtaining a substrate layer, arranging a first corresponding crystalline terminating oxide layer on the substrate layer, arranging at least one semiconductor layer on the first crystalline terminating oxide layer, arranging a second corresponding crystalline terminating oxide layer on the at least one semiconductor layer, and arranging an electrical insulating layer on the second crystalline terminating oxide layer.

Abstract: The present disclosure is related to a semiconductor device and a method of manufacturing the said semiconductor device. The semiconductor device comprising a stacked configuration of a plurality of semiconductor layers. At least one of the semiconductor layers is a III-V compound semiconductor layer, and at least one of the III-V compound semiconductor layers has formed thereonto a corresponding crystalline terminating oxide layer, wherein the at least one of the plurality of semiconductor layers interfaces via its crystalline terminating oxide layer to a neighbouring epitaxial semiconductor layer thereto. The semiconductor device is a quantum well device.

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract: A display integrated pressure sensor is described. In an example, a device comprises: a display including a plurality of layers; a layer of pressure sensitive material having particles; conductivity of the pressure sensitive material is configured to change when the layer experiences deformation; a layer of conductor lines configured to detect the change of the conductivity of the pressure sensitive material; the layer of conductor lines includes a plurality of contacting points with the pressure sensitive material; the layer of pressure sensitive material and the conductor lines are configured to be integrated within the display. In other examples, a manufacturing method and a display module are discussed along with the features of the device.

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.