Patents by Inventor Joumana El Rifai

Joumana El Rifai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8383441
    Abstract: Methods for manufacturing micromachined devices and the devices obtained are disclosed. In one embodiment, the method comprises providing a structural layer comprising an amorphous semiconductor material, forming a shielding layer on a first portion of the structural layer and leaving exposed a second portion of the structural layer, and annealing the second portion using a first fluence. The method further comprises removing the shielding layer, and annealing the first portion and the second portion using a second fluence that is less than half the first fluence. In an embodiment, the device comprises a substrate layer, an underlying layer formed on the substrate layer, and a sacrificial layer formed on only a portion of the underlying layer. The device further comprises a structural layer that is in contact with the underlying layer and comprises a first region annealed using a first fluence and a second region annealed using a second fluence.
    Type: Grant
    Filed: January 21, 2011
    Date of Patent: February 26, 2013
    Assignees: IMEC, American University Cairo, Katholieke Universiteit
    Inventors: Joumana El Rifai, Ann Witvrouw, Ahmed Abdel Aziz, Sherif Sedky
  • Publication number: 20110180886
    Abstract: Methods for manufacturing micromachined devices and the devices obtained are disclosed. In one embodiment, the method comprises providing a structural layer comprising an amorphous semiconductor material, forming a shielding layer on a first portion of the structural layer and leaving exposed a second portion of the structural layer, and annealing the second portion using a first fluence. The method further comprises removing the shielding layer, and annealing the first portion and the second portion using a second fluence that is less than half the first fluence. In an embodiment, the device comprises a substrate layer, an underlying layer formed on the substrate layer, and a sacrificial layer formed on only a portion of the underlying layer. The device further comprises a structural layer that is in contact with the underlying layer and comprises a first region annealed using a first fluence and a second region annealed using a second fluence.
    Type: Application
    Filed: January 21, 2011
    Publication date: July 28, 2011
    Applicants: IMEC, AMERICAN UNIVERSITY IN CAIRO, KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R&D
    Inventors: Joumana El Rifai, Ann Witvrouw, Ahmed Kamal Said Abdel Aziz, Sherif Sedky