Abstract: A semiconductor integrated circuit device may include: a substrate that includes a high-voltage device region and a low-voltage device region defined on the substrate; a first buried impurity layer formed in at least a portion of the high-voltage device region and coupled to a first voltage; a second buried impurity layer formed in at least a portion of the low-voltage device region and coupled to a second voltage less than the first voltage; and a well formed on the second buried impurity layer in the low-voltage device region and coupled to a third voltage less than the second voltage.

Abstract: An address driving circuit includes a driving device unit and an energy recovery circuit. The driving device unit drives an address electrode to an address voltage or a reference voltage in response to driving control signals during an address period. The energy recovery circuit recovers a voltage charged to the address electrode in response to switching control signals such that a voltage of the address electrode transitions to the address voltage or the reference voltage via at least two intermediate voltages including first and second intermediate voltages during the address period.

Abstract: A memory system includes a memory controller, a transmission bus, a power divider, a first memory chip, and a second memory chip. The transmission bus is coupled from the memory controller to a first node of the power divider for transferring signals. The first node of the power divider is coupled to a second node of the power divider via a first line, and the first node is also coupled to a third node of the power divider via a second line. The first memory chip is coupled to the second node via a first branch bus and the second memory chip is coupled to the third node via a second branch bus. Accordingly, reflected wave due to an impedance mismatching can be reduced to enhance the signal integrity.

Abstract: A semiconductor integrated circuit device may include: a substrate that includes a high-voltage device region and a low-voltage device region defined on the substrate; a first buried impurity layer formed in at least a portion of the high-voltage device region and coupled to a first voltage; a second buried impurity layer formed in at least a portion of the low-voltage device region and coupled to a second voltage less than the first voltage; and a well formed on the second buried impurity layer in the low-voltage device region and coupled to a third voltage less than the second voltage.

Abstract: An address driver includes an energy recovery circuit and an output stage connected to the energy recovery circuit. The output stage is connected to the energy recovery circuit and is formed of a pull-up MOS transistor and a pull-down MOS transistor in series. A source terminal of the pull-up MOS transistor is connected to the energy recovery circuit, and a bulk terminal of the pull-up MOS transistor is connected to a node providing a reverse bias between the source terminal and the bulk terminal of the pull-up MOS transistor. A display device employing the address driver is also provided.

Abstract: A passive pre-emphasis unit includes a plurality of transmission lines that is arranged in parallel with one another and has uniform intervals therebetween, and each of the plurality of transmission lines is alternately connected to the same ends. The passive pre-emphasis unit pre-emphasizes an input signal.

Abstract: A spread spectrum clock generator includes a plurality of delay cells, wherein each delay cell includes at least one delayer receiving an external clock signal and causing a predetermined propagation delay to the received clock signal, and a controller transmitting a control signal to the delayer to control the propagation delay of the delayer according to a state value of the control signal. With this configuration, the spread spectrum clock generator using a delayer can have a simple circuit configuration and effectively attenuate an EMI.

Abstract: A memory system includes a memory controller, a transmission bus, a power divider, a first memory chip, and a second memory chip. The transmission bus is coupled from the memory controller to a first node of the power divider for transferring signals. The first node of the power divider is coupled to a second node of the power divider via a first line, and the first node is also coupled to a third node of the power divider via a second line. The first memory chip is coupled to the second node via a first branch bus and the second memory chip is coupled to the third node via a second branch bus. Accordingly, reflected wave due to an impedance mismatching can be reduced to enhance the signal integrity.

Abstract: A spread spectrum clock generator includes a plurality of delay cells, wherein each delay cell includes at least one delayer receiving an external clock signal and causing a predetermined propagation delay to the received clock signal, and a controller transmitting a control signal to the delayer to control the propagation delay of the delayer according to a state value of the control signal. With this configuration, the spread spectrum clock generator using a delayer can have a simple circuit configuration and effectively attenuate an EMI.

Abstract: A frequency doubler circuit implemented in an integrated circuit and having improved doubling performance is provided. The frequency doubler circuit including a phase shifter, a first buffer, a second buffer, a detect-control unit, a third buffer, a fourth buffer, a multiplier and an output buffer. The phase shifter outputs, in response to an input signal having a predetermined frequency, a first signal which is in phase with the input signal and a second signal which is out-of-phase from the input signal. The first buffer filters and buffers the first signal, and the second buffer filters and buffers the second signal. The detect-control unit detects a phase difference between the first and second signals in response to the first signal, the second signal, the output signal of the first buffer and the output signal of the second buffer, and outputs first and second control signals.

Abstract: A frequency doubler circuit implemented in an integrated circuit and having improved doubling performance is provided. The frequency doubler circuit including a phase shifter, a first buffer, a second buffer, a detect-control unit, a third buffer, a fourth buffer, a multiplier and an output buffer. The phase shifter outputs, in response to an input signal having a predetermined frequency, a first signal which is in phase with the input signal and a second signal which is out-of-phase from the input signal. The first buffer filters and buffers the first signal, and the second buffer filters and buffers the second signal. The detect-control unit detects a phase difference between the first and second signals in response to the first signal, the second signal, the output signal of the first buffer and the output signal of the second buffer, and outputs first and second control signals.

Abstract: A frequency doubler circuit implemented in an integrated circuit and having improved doubling performance is provided. The frequency doubler circuit including a phase shifter, a first buffer, a second buffer, a detect-control unit, a third buffer, a fourth buffer, a multiplier and an output buffer. The phase shifter outputs, in response to an input signal having a predetermined frequency, a first signal which is in phase with the input signal and a second signal which is out-of-phase from the input signal. The first buffer filters and buffers the first signal, and the second buffer filters and buffers the second signal. The detect-control unit detects a phase difference between the first and second signals in response to the first signal, the second signal, the output signal of the first buffer and the output signal of the second buffer, and outputs first and second control signals.

Abstract: A frequency doubler circuit implemented in an integrated circuit and having improved doubling performance is provided. The frequency doubler circuit including a phase shifter, a first buffer, a second buffer, a detect-control unit, a third buffer, a fourth buffer, a multiplier and an output buffer. The phase shifter outputs, in response to an input signal having a predetermined frequency, a first signal which is in phase with the input signal and a second signal which is out-of-phase from the input signal. The first buffer filters and buffers the first signal, and the second buffer filters and buffers the second signal. The detect-control unit detects a phase difference between the first and second signals in response to the first signal, the second signal, the output signal of the first buffer and the output signal of the second buffer, and outputs first and second control signals.