Abstract: A plug connector coupled to a receptacle connector is presented, comprising: a conductor for signals; a ring-shaped conductor for ground, the conductor for ground surrounding the conductor for signals; a ring-shaped insulator surrounding the conductor for signals and being surrounded by the conductor for ground, and insulating between the conductor for signals and the conductor for ground; a lower body; and an upper body coupled onto the lower body. The conductor for signals includes a lower portion protruding below a first portion of the top of the insulator, a middle portion inserted into a hollow portion of the first portion, and an upper portion protruding above the first portion. The conductor for ground includes a lower portion protruding below the first portion and an upper portion surrounding the first portion. The lower body includes a lower housing, such that the upper portion is accommodated in the hollow portion.

Abstract: The present invention relates to semiconductor manufacturing parts used in a dry etching process. Semiconductor manufacturing parts comprising a SiC deposition layer, of the present invention, comprises: a base material; and a SiC deposition layer formed on the surface of the base material, wherein the thickness ratio of the base material and the SiC deposition layer is 2:1 to 100:1.

Abstract: The present invention relates to an SiC material and an SiC composite material and, more particularly, to an SiC material and an SiC composite material having a diffraction intensity ratio (I) of an X-ray diffraction peak, calculated by formula 1 down below, of less than 1.5. The present invention can provide an SiC material and an SiC composite material which can be etched evenly when exposed to plasma and thereby reduce the occurrence of cracks, holes and so forth. [Formula 1] Diffraction intensity ratio (I)=(peak intensity of plane (200)+peak intensity of plane (220))/peak intensity of plane (111).

Abstract: The present invention relates to semiconductor manufacturing parts used in a dry etching process. Semiconductor manufacturing parts comprising a SiC deposition layer, of the present invention, comprises: a base material; and a SiC deposition layer formed on the surface of the base material, wherein the thickness ratio of the base material and the SiC deposition layer is 2:1 to 100:1.

Abstract: The present invention relates to semiconductor manufacturing parts used in a dry etching process. Semiconductor manufacturing parts comprising a SiC deposition layer, of the present invention, comprises: a base material; and a SiC deposition layer formed on the surface of the base material, wherein the thickness ratio of the base material and the SiC deposition layer is 2:1 to 100:1.

Abstract: An embodiment of the present invention provides a part for manufacturing a semiconductor, the part comprising a composite containing SiC and C, wherein an atomic ratio of Si:C in the composite is 1:1.1 to 1:2.8.

Abstract: Provided according to an embodiment of the present invention is a component for fabricating an SiC semiconductor, having a plurality of layers having different transmittances, the component comprising two or more superposed layers, wherein each of the superposed layers contains SiC and has a transmittance value different from that of another adjacent layer.

Abstract: The present invention relates to an SiC material and an SiC composite material and, more particularly, to an SiC material and an SiC composite material having a diffraction intensity ratio (I) of an X-ray diffraction peak, calculated by formula 1 down below, of less than 1.5. The present invention can provide an SiC material and an SiC composite material which can be etched evenly when exposed to plasma and thereby reduce the occurrence of cracks, holes and so forth.

Abstract: A method of repairing a semiconductor processing component is provided, in which the method includes preparing a semiconductor processing component including a tantalum carbide (TaC) coating layer on which a silicon carbide (SiC)-deposited layer is formed, and performing a thermal process on the semiconductor processing component at a temperature of 1,700° C. to 2,700° C. under a gaseous condition using at least one gas selected from the group consisting of a gas including hydrogen, a gas including chlorine, and an inert gas, or under a vacuum condition.

Abstract: A method of repairing a semiconductor processing component is provided, in which the method includes preparing a semiconductor processing component including a tantalum carbide (TaC) coating layer on which a silicon carbide (SiC)-deposited layer is formed, and performing a thermal process on the semiconductor processing component at a temperature of 1,700° C. to 2,700° C. under a gaseous condition using at least one gas selected from the group consisting of a gas including hydrogen, a gas including chlorine, and an inert gas, or under a vacuum condition.

Abstract: A method of manufacturing a silicon carbide structure includes forming a silicon carbide layer by depositing silicon carbide on a base plate by chemical vapor deposition, removing the base plate, decreasing electrical conductivity by heat-treating the silicon carbide structure, and removing a thickness of 200 ?m from an upper surface and a lower surface of the silicon carbide structure. In the present invention, silicon carbide is deposited by a CVD method, and the electrical conductivity of the silicon carbide is reduced to the electrical conductivity required for a protection ring of a plasma device through a post-treatment and a post-process. The electrical conductivity may be adjusted even without using separate additives.

Abstract: A method of manufacturing a silicon carbide structure includes forming a silicon carbide layer by depositing silicon carbide on a base plate by chemical vapor deposition, removing the base plate, decreasing electrical conductivity by heat-treating the silicon carbide structure, and removing a thickness of 200 ?m from an upper surface and a lower surface of the silicon carbide structure. In the present invention, silicon carbide is deposited by a CVD method, and the electrical conductivity of the silicon carbide is reduced to the electrical conductivity required for a protection ring of a plasma device through a post-treatment and a post-process. The electrical conductivity may be adjusted even without using separate additives.

Abstract: A metal coated with ceramic and a method manufacturing the same. The metal contains chromium. A buffer layer is disposed on the metal, and a silicon carbide (SiC) coating layer is disposed on the buffer layer. The buffer layer has a thermal expansion coefficient between those of the metal and the SiC coating layer. The method includes annealing a metal containing chromium to form a chromium oxide layer on the metal, dissolving polycarbosilane (PCS) in a solvent to form a PCS coating solution, coating the chromium oxide layer with the PCS solution, and annealing the to form an SiC coating.

Abstract: A metal coated with a ceramic material and a method of manufacturing the same are provided. The method includes a) preparing a coating solution by dissolving a SiC precursor in a solvent; b) coating a metal material with the coating solution using a non-thermal coating technique; c) forming a SiC precursor coating layer on the metal material by drying the metal material coated with the coating solution in an oxygen-free atmosphere; d) partially removing a polymer by preprocessing the SiC precursor coating layer; and e) converting the SiC precursor coating layer into a SiC coating layer using a thermal treatment process. In this method, the SiC precursor is coated on the metal material and converted into the SiC coating layer, so that a pure SiC coating layer can be formed without causing cracking or delaminating. Thus, the metal material can have higher resistance to oxidation, chemicals, and heat.