Patents by Inventor Joung-real AHN

Joung-real AHN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Graphene structure, graphene device including same, and method of manufacturing graphene structure
    Patent number: 9324839
    Abstract: A method of manufacturing a graphene structure, the graphene structure, and a graphene device including the graphene structure, include depositing a metal layer over a silicon carbide substrate; and performing, at a first temperature, a heat treatment on the silicon carbide substrate over which the metal layer is deposited to form a composite layer and a graphene layer on the silicon carbide substrate. The composite layer includes a metal.
    Type: Grant
    Filed: June 24, 2013
    Date of Patent: April 26, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Joung-real Ahn, Ha-chul Shin, In-kyung Song
  • Semiconducting graphene composition, and electrical device including the same
    Patent number: 9281385
    Abstract: A graphene composition including a graphene monolayer and an alkali metal disposed on the graphene monolayer.
    Type: Grant
    Filed: June 20, 2011
    Date of Patent: March 8, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon-jin Shin, Jae-young Choi, Joung-real Ahn, Cheol-ho Jeon
  • Graphene-layered structure, method of preparing the same, and transparent electrode and transistor including graphene-layered structure
    Patent number: 9193133
    Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: November 24, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon-jin Shin, Jae-young Choi, Joung-real Ahn, Jung-tak Seo
  • 3-dimensional graphene structure and process for preparing and transferring the same
    Patent number: 8921824
    Abstract: A three-dimensional graphene structure, and methods of manufacturing and transferring the same including forming at least one layer of graphene having a periodically repeated three-dimensional shape. The three-dimensional graphene structure is formed by forming a pattern having a three-dimensional shape on a surface of a substrate, and forming the three-dimensional graphene structure having the three-dimensional shape of the pattern by growing graphene on the substrate on which the pattern is formed. The three-dimensional graphene structure is transferred by injecting a gas between the three-dimensional graphene structure and the substrate, separating the three-dimensional graphene structure from the substrate by bonding the three-dimensional graphene structure to an adhesive support, combining the three-dimensional graphene structure with an insulating substrate, and removing the adhesive support.
    Type: Grant
    Filed: April 2, 2012
    Date of Patent: December 30, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyeon-jin Shin, Jae-young Choi, Ji-hoon Park, Joung-real Ahn
  • GRAPHENE STRUCTURE, GRAPHENE DEVICE INCLUDING SAME, AND METHOD OF MANUFACTURING GRAPHENE STRUCTURE
    Publication number: 20140175458
    Abstract: A method of manufacturing a graphene structure, the graphene structure, and a graphene device including the graphene structure, include depositing a metal layer over a silicon carbide substrate; and performing, at a first temperature, a heat treatment on the silicon carbide substrate over which the metal layer is deposited to form a composite layer and a graphene layer on the silicon carbide substrate. The composite layer includes a metal.
    Type: Application
    Filed: June 24, 2013
    Publication date: June 26, 2014
    Inventors: Joung-real AHN, Ha-chul SHIN, In-kyung SONG
  • GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE
    Publication number: 20140141265
    Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
    Type: Application
    Filed: January 28, 2014
    Publication date: May 22, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Hyeon-jin SHIN, Jae-young CHOI, Joung-real AHN, Jung-tak SEO
  • Graphene-layered structure, method of preparing the same, and transparent electrode and transistor including graphene-layered structure
    Patent number: 8679951
    Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
    Type: Grant
    Filed: June 22, 2012
    Date of Patent: March 25, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyeon-jin Shin, Jae-young Choi, Joung-real Ahn, Jung-tak Seo
  • GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE
    Publication number: 20120326128
    Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
    Type: Application
    Filed: June 22, 2012
    Publication date: December 27, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon-jin SHIN, Jae-young CHOI, Joung-real AHN, Jung-tak SEO
  • 3-DIMENSIONAL GRAPHENE STRUCTURE AND PROCESS FOR PREPARING AND TRANSFERRING THE SAME
    Publication number: 20120248401
    Abstract: A three-dimensional graphene structure, and methods of manufacturing and transferring the same including forming at least one layer of graphene having a periodically repeated three-dimensional shape. The three-dimensional graphene structure is formed by forming a pattern having a three-dimensional shape on a surface of a substrate, and forming the three-dimensional graphene structure having the three-dimensional shape of the pattern by growing graphene on the substrate on which the pattern is formed. The three-dimensional graphene structure is transferred by injecting a gas between the three-dimensional graphene structure and the substrate, separating the three-dimensional graphene structure from the substrate by bonding the three-dimensional graphene structure to an adhesive support, combining the three-dimensional graphene structure with an insulating substrate, and removing the adhesive support.
    Type: Application
    Filed: April 2, 2012
    Publication date: October 4, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon-jin Shin, Jae-young Choi, Ji-hoon Park, Joung-real Ahn
  • SEMICONDUCTING GRAPHENE COMPOSITION, AND ELECTRICAL DEVICE INCLUDING THE SAME
    Publication number: 20110309336
    Abstract: A graphene composition including a graphene monolayer and an alkali metal disposed on the graphene monolayer.
    Type: Application
    Filed: June 20, 2011
    Publication date: December 22, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon-jin SHIN, Jae-young CHOI, Joung-real AHN, Cheol-ho JEON