Abstract: A memory device determines an operation mode based on an external voltage. The memory device includes a cell array including a plurality of memory cells; and a mode selector that detects a level of at least one voltage signal externally provided and selects any one of a plurality of operation modes corresponding to a plurality of standards according to a result of detecting the level of the at least one voltage signal. The memory device further includes a mode controller that, in response to a mode selecting signal from the mode selector, outputs setting information for setting the memory device to communicate with a memory controller via an interface according to a selected standard from among the plurality of standards; and a calibrating circuit that generates a control code for controlling circuit blocks in the memory device according to the setting information.

Abstract: A memory device determines an operation mode based on an external voltage. The memory device includes a cell array including a plurality of memory cells; and a mode selector that detects a level of at least one voltage signal externally provided and selects any one of a plurality of operation modes corresponding to a plurality of standards according to a result of detecting the level of the at least one voltage signal. The memory device further includes a mode controller that, in response to a mode selecting signal from the mode selector, outputs setting information for setting the memory device to communicate with a memory controller via an interface according to a selected standard from among the plurality of standards; and a calibrating circuit that generates a control code for controlling circuit blocks in the memory device according to the setting information.

Abstract: A duty cycle corrector (DCC) includes a duty corrector circuit configured to adjust a duty of an input signal to output a duty-adjusted signal; a duty detector circuit configured to generate a correction code associated with the adjustment of the duty, based on a charge pump operation and a counting operation; and a timing controller configured to generate a first control signal associated with the charge pump operation and a second control signal associated with the counting operation in synchronization with a first clock.

Abstract: A duty cycle corrector (DCC) includes a duty corrector circuit configured to adjust a duty of an input signal to output a duty-adjusted signal; a duty detector circuit configured to generate a correction code associated with the adjustment of the duty, based on a charge pump operation and a counting operation; and a timing controller configured to generate a first control signal associated with the charge pump operation and a second control signal associated with the counting operation in synchronization with a first clock.

Abstract: Disclosed are a semiconductor device capable of testing memory cells and a test method. The semiconductor device includes a plurality of terminals, each terminal being configured to receive similar data during a test mode, a plurality of buffers, each buffer being configured to receive data from a corresponding terminal and output either the data or changed data to a corresponding memory cells in response to a control signal, and a control unit configured to generate a plurality of control signals, each control signal being respectively applied to a corresponding buffer.

Abstract: Disclosed are a semiconductor device capable of testing memory cells and a test method. The semiconductor device includes a plurality of terminals, each terminal being configured to receive similar data during a test mode, a plurality of buffers, each buffer being configured to receive data from a corresponding terminal and output either the data or changed data to a corresponding memory cells in response to a control signal, and a control unit configured to generate a plurality of control signals, each control signal being respectively applied to a corresponding buffer.

Abstract: An input buffer circuit of a semiconductor device, the input buffer circuit including a buffer, the buffer configured to adjust an input level of an input signal in response to a selected bias voltage, a voltage generating and distributing unit, the voltage generating and distributing unit configured to generate and distribute a plurality of bias voltages having different levels, and a selector, the selector configured to select from among the plurality of bias voltages according to an applied selection signal and to apply the selected bias voltage to the buffer.