Abstract: An imaging device comprises a semiconductor substrate including an array of pixel cells. Each pixel cell comprising an individually addressable pixel circuit for accumulating charge resulting from radiation incident on a pixel detector. The pixel circuit and the pixel detector can either be implemented on a single substrate, or on two substrates bonded together. The charge storage device can be a transistor, for example one of a pair of FET transistors connected as a cascade amplification stage. An imaging plane can be made up of one imaging device or a plurality of imaging devices tiled to form a mosaic. The imaging devices may be configured as a slot for certain applications, the slit or slot being scanned over the imaging plane. Control electronics can include addressing logic for addressing individual pixel circuits for reading accumulated charge from the pixel circuits.

Abstract: A semiconductor radiation imaging device includes an array of pixel cells having an array of pixel detectors which directly generate charge in response to incident radiation and a corresponding array of individually-addressable pixel circuits. Each pixel circuit is associated with a respective pixel detector for accumulating charge directly resulting from radiation incident on the pixel detector and includes threshold circuitry and charge accumulation circuitry. The threshold circuitry is configured to discard radiation hits on the pixel detector outside a predetermined threshold range, and the charge accumulation circuit is configured to accumulate charge directly resulting from a plurality of successive radiation hits on the respective pixel detector within the predetermined threshold range.

Abstract: An imaging device comprises a semiconductor substrate including an array of pixel cells. Each pixel cell comprising an individually addressable pixel circuit for accumulating charge resulting from radiation incident on a pixel detector. The pixel circuit and the pixel detector can either be implemented on a single substrate, or on two substrates bonded together. The charge storage device can be a transistor, for example one of a pair of FET transistors connected as a cascade amplification stage. An imaging plane can be made up of one imaging device or a plurality of imaging devices tiled to form a mosaic. The imaging devices may be configured as a slot for certain applications, the slit or slot being scanned over the imaging plane. Control electronics can include addressing logic for addressing individual pixel circuits for reading accumulated charge from the pixel circuits.

Abstract: An imaging device for radiation imaging is an array of image cells. The array of image cells consists of an array of detector cells and an array of image cell circuits. Each detector cell is connected to the corresponding cell in the array of image cell circuits. Each individual cell in the detector cell array generates a charge based on the radiation that hits the cell. Each cell in the array of image cell circuits accumulates the charge on a storage capacitor. The storage capacitor can be, for example, the gate of a transistor. Single cells in the array of image cells can be grouped together to form larger area super cells. The size of the super cell can be controlled by control signals, which select the operating mode. The output from a cell, a single cell or a super cell, is read out in current mode and is scaled according to the size of the cell. Several modes can be implemented in the imaging device.

Abstract: A semiconductor radiation imaging device is disclosed which includes an array of image elements, each image element of said array comprising an image element detector cell which generates charge in response to radiation incident on said image element and image element circuitry for accumulating said charge from said image element detector cell and for selectively outputting a signal representative of accumulated charge. The imaging device further includes a radiation sensor element, said radiation sensor element comprising a radiation detector cell integral with said image element detector cells for generating charge in response to incident radiation on said radiation sensor element and a radiation sensor output for continuously supplying charge from said radiation detector cell. Also disclosed is an imaging system employing image devices as described above, and a method of imaging radiation.

Abstract: A radiation imaging device includes an image cell array having an array of detector cells and an array of image cell circuits. Each image cell circuit is associated with a respective detector cell and includes counting. The image cell circuits may include threshold circuitry configured to receive signals generated in the respective detector cell and having values dependent on the incident radiation energy. The counting circuitry may be coupled to the threshold circuitry.

Abstract: An imaging device comprises a semiconductor substrate including an array of pixel cells. Each pixel cell comprising an individually addressable pixel circuit for accumulating charge resulting from radiation incident on a pixel detector. The pixel circuit and the pixel detector can either be implemented on a single substrate, or on two substrates bonded together. The charge storage device can be a transistor, for example one of a pair of FET transistors connected as a cascade amplification stage. An imaging plane can be made up of one imaging device or a plurality of imaging devices tiled to form a mosaic. The imaging devices may be configured as a slot for certain applications, the slit or slot being scanned over the imaging plane. Control electronics can include addressing logic for addressing individual pixel circuits for reading accumulated charge from the pixel circuits.

Abstract: A semiconductor radiation imaging device is disclosed which includes an array of image elements, each image element of said array comprising an image element detector cell which generates charge in response to radiation incident on said image element and image element circuitry for accumulating said charge from said image element detector cell and for selectively outputting a signal representative of accumulated charge. The imaging device further includes a radiation sensor element, said radiation sensor element comprising a radiation detector cell integral with said image element detector cells for generating charge in response to incident radiation on said radiation sensor element and a radiation sensor output for continuously supplying charge from said radiation detector cell. Also disclosed is an imaging system employing image devices as described above, and a method of imaging radiation.

Abstract: A radiation imaging device includes an image cell array having an array of detector cells and an array of image cell circuits. Each image cell circuit is associated with a respective detector cell and includes counting. The image cell circuits may include threshold circuitry configured to receive signals generated in the respective detector cell and having values dependent on the incident radiation energy. The counting circuitry may be coupled to the threshold circuitry.

Abstract: An imaging device for radiation imaging is an array of image cells. The array of image cells consists of an array of detector cells and an array of image cell circuits. Each detector cell is connected to the corresponding cell in the array of image cell circuits. Each individual cell in the detector cell array generates a charge based on the radiation that hits the cell. Each cell in the array of image cell circuits accumulates the charge on a storage capacitor. The storage capacitor can be, for example, the gate of a transistor. Single cells in the array of image cells can be grouped together to form larger area super cells. The size of the super cell can be controlled by control signals, which select the operating mode. The output from a cell, a single cell or a super cell, is read out in current mode and is scaled according to the size of the cell. Several modes can be implemented in the imaging device.

Abstract: A radiation imaging device includes an image cell array having an array of detector cells and an array of image cell circuits. Each image cell circuit is associated with a respective detector cell and includes counting. The image cell circuits may include threshold circuitry configured to receive signals generated in the respective detector cell and having values dependent on the incident radiation energy. The counting circuitry may be coupled to the threshold circuitry.

Abstract: An imaging device for radiation imaging is an array of image cells. The array of image cells consists of an array of detector cells and an array of image cell circuits. Each detector cell is connected to the corresponding cell in the array of image cell circuits. Each individual cell in the detector cell array generates a charge based on the radiation that hits the cell. Each cell in the array of image cell circuits accumulates the charge on a storage capacitor. The storage capacitor can be, for example, the gate of a transistor. Single cells in the array of image cells can be grouped together to form larger area super cells. The size of the super cell can be controlled by control signals, which select the operating mode. The output from a cell, a single cell or a super cell, is read out in current mode and is scaled according to the size of the cell. The read out line is pre-charged prior to read out to reduce the effect of parasitic capacitance in the read out line.

Abstract: A radiation imaging device includes an image cell array having an array of detector cells and an array of image cell circuits. Each image cell circuit is associated with a respective detector cell and includes counting. The image cell circuits may include threshold circuitry configured to receive signals generated in the respective detector cell and having values dependent on the incident radiation energy. The counting circuitry may be coupled to the threshold circuitry.

Abstract: An imaging device comprises a semiconductor substrate including an array of pixel cells. Each pixel cell comprising an individually addressable pixel circuit for accumulating charge resulting from radiation incident on a pixel detector. The pixel circuit and the pixel detector can either be implemented on a single substrate, or on two substrates bonded together. The charge storage device can be a transistor, for example one of a pair of FET transistors connected as a cascade amplification stage. An imaging plane can be made up of one imaging device or a plurality of imaging devices tiled to form a mosaic. The imaging devices may be configured as a slot for certain applications, the slit or slot being scanned over the imaging plane. Control electronics can include addressing logic for addressing individual pixel circuits for reading accumulated charge from the pixel circuits.

Abstract: A semi-conductor imaging device, for example for x-ray imaging, uses a detector substrate exposable to incident radiation and having a plurality of charge collection contacts for collecting charge therefrom, the detector substrate being arranged in front of a readout substrate carrying or comprising readout circuitry, the readout substrate using a first region with a respective cell circuit coupled to each charge collection contact for receiving signals from the detector substrate, and a second region with further circuitry, and such that the charge collection contacts are arranged over both the first and second regions of the readout substrate. A conductive path connects each charge collection contact over the second region with a respective terminal for contacting an input of a cell circuit in the first region. The invention enables the part of the detector substrate overlying the additional circuitry to be used as active detection area.

Abstract: A semiconductor high-energy radiation imaging device having an array of pixel cells includes a semiconductor detector substrate and a semiconductor readout substrate. The semiconductor detector substrate includes an array of pixel detector cells, each of which directly generates charge in response to incident high-energy radiation. The semiconductor readout substrate includes an array of individually addressable pixel circuits, each of which is connected to a corresponding pixel detector cell to form a pixel cell. Each pixel circuit includes charge accumulation circuitry for accumulating charge directly resulting from high-energy radiation incident on a corresponding pixel detector cell, readout circuitry for reading the accumulated charge, and reset circuitry for resetting the charge accumulation circuitry. The charge accumulation circuitry has a charge storage capacity sufficient to store at least 1.