Abstract: A method for passivating a target layer. There is first provided a substrate. There is then formed over the substrate a target layer, where the target layer is susceptible to corrosion incident to contact with a corrosive material employed for further processing of the substrate. There is then treated, while employing a first plasma method employing a first plasma gas composition comprising an oxidizing gas, the target layer to form an oxidized target layer having an inhibited susceptibility to corrosion incident to contact with the corrosive material employed for further processing of the substrate. Finally, there is then processed further, while employing the corrosive material, the substrate. The method is useful when forming bond pads within microelectronic fabrications.

Abstract: A method and apparatus for practicing the method is described for an in-situ wet polymer stripping process following an etching process, the method including, providing at least one solution container disposed outside the wafer cleaning chamber; providing at least one solution bath disposed within the wafer cleaning chamber; providing a solution in the at least one solution container; providing at least one fluidic pathway in communication with the at least one solution container and the at least one solution bath for supplying the solution to the at least one solution bath; controllably supplying the solution from the at least one solution container to the at least one solution bath; immersing the at least one process wafer into the at least one solution bath; and drying the at least one process wafer.

Abstract: A method and apparatus for practicing the method is described for an in-situ wet polymer stripping process following an etching process, the method including, providing at least one solution container disposed outside the wafer cleaning chamber; providing at least one solution bath disposed within the wafer cleaning chamber; providing a solution in the at least one solution container; providing at least one fluidic pathway in communication with the at least one solution container and the at least one solution bath for supplying the solution to the at least one solution bath; controllably supplying the solution from the at least one solution container to the at least one solution bath; immersing the at least one process wafer into the at least one solution bath; and drying the at least one process wafer.