Patents by Inventor Joy Watanabe

Joy Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12272677
    Abstract: Direct bonded stack structures for increased reliability and improved yields in microelectronics are provided. Structural features and stack configurations are provided for memory modules and 3DICs to reduce defects in vertically stacked dies. Example processes alleviate warpage stresses between a thicker top die and direct bonded dies beneath it, for example. An etched surface on the top die may relieve warpage stresses. An example stack may include a compliant layer between dies. Another stack configuration replaces the top die with a layer of molding material to circumvent warpage stresses. An array of cavities on a bonding surface can alleviate stress forces. One or more stress balancing layers may also be created on a side of the top die or between other dies to alleviate or counter warpage. Rounding of edges can prevent stresses and pressure forces from being destructively transmitted through die and substrate layers. These measures may be applied together or in combinations in a single package.
    Type: Grant
    Filed: February 27, 2024
    Date of Patent: April 8, 2025
    Assignee: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
    Inventors: Cyprian Emeka Uzoh, Rajesh Katkar, Thomas Workman, Guilian Gao, Gaius Gillman Fountain, Jr., Laura Wills Mirkarimi, Belgacem Haba, Gabriel Z. Guevara, Joy Watanabe
  • Publication number: 20240203948
    Abstract: Direct bonded stack structures for increased reliability and improved yields in microelectronics are provided. Structural features and stack configurations are provided for memory modules and 3DICs to reduce defects in vertically stacked dies. Example processes alleviate warpage stresses between a thicker top die and direct bonded dies beneath it, for example. An etched surface on the top die may relieve warpage stresses. An example stack may include a compliant layer between dies. Another stack configuration replaces the top die with a layer of molding material to circumvent warpage stresses. An array of cavities on a bonding surface can alleviate stress forces. One or more stress balancing layers may also be created on a side of the top die or between other dies to alleviate or counter warpage. Rounding of edges can prevent stresses and pressure forces from being destructively transmitted through die and substrate layers. These measures may be applied together or in combinations in a single package.
    Type: Application
    Filed: February 27, 2024
    Publication date: June 20, 2024
    Inventors: Cyprian Emeka Uzoh, Rajesh Katkar, Thomas Workman, Guilian Gao, Gaius Gillman Fountain, JR., Laura Wills Mirkarimi, Belgacem Haba, Gabriel Z. Guevara, Joy Watanabe
  • Patent number: 11955463
    Abstract: Direct bonded stack structures for increased reliability and improved yields in microelectronics are provided. Structural features and stack configurations are provided for memory modules and 3DICs to reduce defects in vertically stacked dies. Example processes alleviate warpage stresses between a thicker top die and direct bonded dies beneath it, for example. An etched surface on the top die may relieve warpage stresses. An example stack may include a compliant layer between dies. Another stack configuration replaces the top die with a layer of molding material to circumvent warpage stresses. An array of cavities on a bonding surface can alleviate stress forces. One or more stress balancing layers may also be created on a side of the top die or between other dies to alleviate or counter warpage. Rounding of edges can prevent stresses and pressure forces from being destructively transmitted through die and substrate layers. These measures may be applied together or in combinations in a single package.
    Type: Grant
    Filed: February 25, 2022
    Date of Patent: April 9, 2024
    Assignee: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
    Inventors: Cyprian Emeka Uzoh, Rajesh Katkar, Thomas Workman, Guilian Gao, Gaius Gillman Fountain, Jr., Laura Wills Mirkarimi, Belgacem Haba, Gabriel Z. Guevara, Joy Watanabe
  • Publication number: 20220293567
    Abstract: Direct bonded stack structures for increased reliability and improved yields in microelectronics are provided. Structural features and stack configurations are provided for memory modules and 3DICs to reduce defects in vertically stacked dies. Example processes alleviate warpage stresses between a thicker top die and direct bonded dies beneath it, for example. An etched surface on the top die may relieve warpage stresses. An example stack may include a compliant layer between dies. Another stack configuration replaces the top die with a layer of molding material to circumvent warpage stresses. An array of cavities on a bonding surface can alleviate stress forces. One or more stress balancing layers may also be created on a side of the top die or between other dies to alleviate or counter warpage. Rounding of edges can prevent stresses and pressure forces from being destructively transmitted through die and substrate layers. These measures may be applied together or in combinations in a single package.
    Type: Application
    Filed: February 25, 2022
    Publication date: September 15, 2022
    Inventors: Cyprian Emeka Uzoh, Rajesh Katkar, Thomas Workman, Guilian Gao, Gaius Gillman Fountain, JR., Laura Wills Mirkarimi, Belgacem Haba, Gabriel Z. Guevara, Joy Watanabe
  • Patent number: 11296053
    Abstract: Direct bonded stack structures for increased reliability and improved yields in microelectronics are provided. Structural features and stack configurations are provided for memory modules and 3DICs to reduce defects in vertically stacked dies. Example processes alleviate warpage stresses between a thicker top die and direct bonded dies beneath it, for example. An etched surface on the top die may relieve warpage stresses. An example stack may include a compliant layer between dies. Another stack configuration replaces the top die with a layer of molding material to circumvent warpage stresses. An array of cavities on a bonding surface can alleviate stress forces. One or more stress balancing layers may also be created on a side of the top die or between other dies to alleviate or counter warpage. Rounding of edges can prevent stresses and pressure forces from being destructively transmitted through die and substrate layers. These measures may be applied together or in combinations in a single package.
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: April 5, 2022
    Assignee: INVENSAS BONDING TECHNOLOGIES, INC.
    Inventors: Cyprian Emeka Uzoh, Rajesh Katkar, Thomas Workman, Guilian Gao, Gaius Gillman Fountain, Jr., Laura Wills Mirkarimi, Belgacem Haba, Gabriel Z. Guevara, Joy Watanabe
  • Publication number: 20200411483
    Abstract: Direct bonded stack structures for increased reliability and improved yields in microelectronics are provided. Structural features and stack configurations are provided for memory modules and 3DICs to reduce defects in vertically stacked dies. Example processes alleviate warpage stresses between a thicker top die and direct bonded dies beneath it, for example. An etched surface on the top die may relieve warpage stresses. An example stack may include a compliant layer between dies. Another stack configuration replaces the top die with a layer of molding material to circumvent warpage stresses. An array of cavities on a bonding surface can alleviate stress forces. One or more stress balancing layers may also be created on a side of the top die or between other dies to alleviate or counter warpage. Rounding of edges can prevent stresses and pressure forces from being destructively transmitted through die and substrate layers. These measures may be applied together or in combinations in a single package.
    Type: Application
    Filed: June 24, 2020
    Publication date: December 31, 2020
    Inventors: Cyprian Emeka Uzoh, Rajesh Katkar, Thomas Workman, Guilian Gao, Gaius Gillman Fountain, JR., Laura Wills Mirkarimi, Belgacem Haba, Gabriel Z. Guevara, Joy Watanabe