Abstract: A reusable apparatus for storing and delivering a sterile product. The apparatus includes a compressible reservoir adapted to allow for filling, storing, and delivering the sterile product, and a sterile inlet and outlet device including an inlet portion and an outlet portion. The sterile inlet and outlet device is connected to the compressible reservoir and adapted to allow the sterile product to be filled from exterior to the reusable apparatus and into the compressible reservoir through the inlet portion and adapted to allow the sterile product to be delivered from the compressible reservoir through the outlet portion.

Abstract: An apparatus used for analysis of a fluid-based system that includes a main chamber consisting of an optically transparent high strength material that ensures transmission of infrared and ultraviolet wavelengths and is capable of withstanding high pressures. The apparatus also includes first and second fluid tight endcaps attached to first and second ends of the main chamber, wherein the first endcap permits entry of a fluid into the main chamber and the second endcap permits the fluid to exit the main chamber. The apparatus further includes a fixed filter guide rail located inside the main chamber and attached to one of the end caps, and a filter located inside the main chamber and configured to removably attach to the fixed filter guide rail, wherein the filter is capable of capturing residue or contaminants in the fluid.

Abstract: A device that comprises an outer component, an inner component and a filter module. The outer component includes a first hollow cylinder, and exterior ports in sidewalls of the first hollow cylinder. The inner component is positioned coaxially within the first hollow cylinder, and includes a second cylinder, and interior ports in the second cylinder, wherein the interior fluid ports are aligned parallel to the exterior ports. The filter module includes a hollow prism positioned coaxially within the outer component and surrounding the inner component, the hollow prism comprising at least four faces configured to retain filters. The filter module also includes vanes positioned along edges connecting the at least four faces and forming seals with the first hollow cylinder. A first filter is provided on a first face, of the at least four faces, which is aligned between a pair of the interior and exterior ports.

Abstract: Apparatuses and methods of fabrication are provided which include a coolant-cooled heat sink through which coolant passes to facilitate cooling the coolant-cooled heat sink, and an ultra-violet (UV) light assembly associated with the coolant-cooled heat sink for directing UV light towards an interior surface of the coolant-cooled heat sink across which the coolant passes. The UV light inhibits bacterial growth at the interior surface of the coolant-cooled heat sink.

Abstract: Coolant-cooled heat sinks and methods of fabrication are provided with a coolant-carrying compartment between a cover and a heat transfer base. The heat transfer base includes a heat transfer surface to couple to a component to be cooled, and a plurality of thermally-conductive fins extending into the coolant-carrying compartment from a surface of the heat transfer base opposite to the heat transfer surface. One or more grooves are provided in an interface surface of the cover and fins, and wicking element(s) are positioned within, at least in part, the groove(s). A joining material is provided between the cover and fins to join the plurality of thermally-conductive fins to the cover. The wicking element(s) within, at least in part, the groove(s) facilitate retaining the joining material over the plurality of thermally-conductive fins during joining of the cover and fins.

Abstract: Coolant-cooled heat sinks and methods of fabrication are provided with a coolant-carrying compartment between a cover and a heat transfer base. The heat transfer base includes a heat transfer surface to couple to a component to be cooled, and a plurality of thermally-conductive fins extending into the coolant-carrying compartment from a surface of the heat transfer base opposite to the heat transfer surface. One or more grooves are provided in an interface surface of the cover and fins, and wicking element(s) are positioned within, at least in part, the groove(s). A joining material is provided between the cover and fins to join the plurality of thermally-conductive fins to the cover. The wicking element(s) within, at least in part, the groove(s) facilitate retaining the joining material over the plurality of thermally-conductive fins during joining of the cover and fins.

Abstract: A nonvolatile memory cell utilizing planar control gates, which provides advantages of being compatible with self-aligned silicide processes and providing a planar surface for subsequent wiring processes. A substrate defines a first NVRAM region having large floating gate areas with smaller areas cutout to isolate individual memory cells, and a second CMOS Logic region. ONO is deposited on the floating gate areas, and a thick poly layer is deposited in a blanket manner over the first and second regions of the substrate. Resist shapes are patterned over the logic areas in the array where necessary according to a predetermined density algorithm. The poly layer is reactive ion etched, followed by a chemical mechanical polishing (CMP) operation. The final poly gate thickness is 200-220 nm in the CMOS logic areas and in the NVRAM control gate areas between floating gate regions, but only 100-120 nm for the NVRAM control gates over the floating gates.

Abstract: A nonvolatile memory cell utilizing planar control gates, which provides advantages of being compatible with self-aligned silicide processes and providing a planar surface for subsequent wiring processes. A substrate defines a first NVRAM region having large floating gate areas with smaller areas cutout to isolate individual memory cells, and a second CMOS Logic region. ONO is deposited on the floating gate areas, and a thick poly layer is deposited in a blanket manner over the first and second regions of the substrate. Resist shapes are patterned over the logic areas in the array where necessary according to a predetermined density algorithm. The poly layer is reactive ion etched, followed by a chemical mechanical polishing (CMP) operation. The final poly gate thickness is 200-220 nm in the CMOS logic areas and in the NVRAM control gate areas between floating gate regions, but only 100-120 nm for the NVRAM control gates over the floating gates.