Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes decreasing a supply voltage of a memory array to a first voltage level, the first voltage level being below a normal operating voltage associated with the memory array, reading a first value of a bit cell after the supply voltage has been at the first voltage level, and determining a function based on the first value of the bit cell and a second value, the second value stored in the bit cell when the memory array is operating at a voltage level above the first voltage level, the function to represent an identification of a circuit including the memory array.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes decreasing a supply voltage of a memory array to a first voltage level, the first voltage level being below a normal operating voltage associated with the memory array, reading a first value of a bit cell after the supply voltage has been at the first voltage level, and determining a function based on the first value of the bit cell and a second value, the second value stored in the bit cell when the memory array is operating at a voltage level above the first voltage level, the function to represent an identification of a circuit including the memory array.

Abstract: Read-only (“RO”) data consisting of a physically unclonable function (“PUF”) pattern is written to a ferroelectric random-access memory (“FRAM”) memory array. The FRAM array is baked to imprint the PUF pattern with a selected average depth of imprint and a corresponding average read reliability. The average depth of imprint and corresponding average read reliability are determined during testing after baking. The PUF pattern as read after baking is compared to the PUF pattern as written prior to baking. Additional PUF pattern writing and baking cycles may be performed until the average depth of imprint and associated read reliability reach a first selected level. Integrated circuits determined to be over-imprinted by exceeding a second selected level may be rejected. The first and second levels of PUF pattern imprint are selected such as to produce FRAM arrays with a unique fingerprint for each individual FRAM array-containing integrated circuit.

Abstract: Read-only (“RO”) data consisting of a physically unclonable function (“PUF”) pattern is written to a ferroelectric random-access memory (“FRAM”) memory array. The FRAM array is baked to imprint the PUF pattern with a selected average depth of imprint and a corresponding average read reliability. The average depth of imprint and corresponding average read reliability are determined during testing after baking. The PUF pattern as read after baking is compared to the PUF pattern as written prior to baking. Additional PUF pattern writing and baking cycles may be performed until the average depth of imprint and associated read reliability reach a first selected level. Integrated circuits determined to be over-imprinted by exceeding a second selected level may be rejected. The first and second levels of PUF pattern imprint are selected such as to produce FRAM arrays with a unique fingerprint for each individual FRAM array-containing integrated circuit.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes after applying a voltage to a memory array: determining a first duration between the applying of the voltage and a first output of a first bit cell, the first output corresponding to a first value stored in the first bit cell, and determining a second duration between the applying of the voltage and a second output of a second bit cell, the second output corresponding to a second value stored in the second bit cell. The example method further includes determining a function based on a comparison of the first duration and the second duration, the function to establish an identification of a circuit that includes the memory array.

Abstract: Post-processing circuitry for LDPC decoding includes check node processor for processing shifted LLR values, a hard decision decoder circuitry for receiving processed LLR information and performing parity checks on the processed LLR information. Post-processing control circuitry controls updating of LLR information in the check node processor. The check node processor, hard decision decoder, and control circuitry cooperate to identify check nodes with unsatisfied parity checks after an iteration cycle, identify neighborhood variable nodes that are connected with unsatisfied check nodes, identify satisfied check nodes which are connected to neighborhood variable nodes, and modify messages from neighborhood variable nodes to satisfied check nodes if needed to introduce perturbations to resolve decoding errors.

Abstract: Read-only (“RO”) data consisting of a physically unclonable function (“PUF”) pattern is written to a ferroelectric random-access memory (“FRAM”) memory array. The FRAM array is baked to imprint the PUF pattern with a selected average depth of imprint and a corresponding average read reliability. The average depth of imprint and corresponding average read reliability are determined during testing after baking. The PUF pattern as read after baking is compared to the PUF pattern as written prior to baking. Additional PUF pattern writing and baking cycles may be performed until the average depth of imprint and associated read reliability reach a first selected level. Integrated circuits determined to be over-imprinted by exceeding a second selected level may be rejected. The first and second levels of PUF pattern imprint are selected such as to produce FRAM arrays with a unique fingerprint for each individual FRAM array-containing integrated circuit.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes after applying a voltage to a memory array: determining a first duration between the applying of the voltage and a first output of a first bit cell, the first output corresponding to a first value stored in the first bit cell, and determining a second duration between the applying of the voltage and a second output of a second bit cell, the second output corresponding to a second value stored in the second bit cell. The example method further includes determining a function based on a comparison of the first duration and the second duration, the function to establish an identification of a circuit that includes the memory array.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes after applying a voltage to a memory array: determining a first duration between the applying of the voltage and a first output of a first bit cell, the first output corresponding to a first value stored in the first bit cell, and determining a second duration between the applying of the voltage and a second output of a second bit cell, the second output corresponding to a second value stored in the second bit cell. The example method further includes determining a function based on a comparison of the first duration and the second duration, the function to establish an identification of a circuit that includes the memory array.

Abstract: Post-processing circuitry for LDPC decoding includes check node processor for processing shifted LLR values, a hard decision decoder circuitry for receiving processed LLR information and performing parity checks on the processed LLR information. Post-processing control circuitry controls updating of LLR information in the check node processor. The check node processor, hard decision decoder, and control circuitry cooperate to identify check nodes with unsatisfied parity checks after an iteration cycle, identify neighborhood variable nodes that are connected with unsatisfied check nodes, identify satisfied check nodes which are connected to neighborhood variable nodes, and modify messages from neighborhood variable nodes to satisfied check nodes if needed to introduce perturbations to resolve decoding errors.

Abstract: Post-processing circuitry for LDPC decoding includes check node processor for processing shifted LLR values, a hard decision decoder circuitry for receiving processed LLR information and performing parity checks on the processed LLR information. Post-processing control circuitry controls updating of LLR information in the check node processor. The check node processor, hard decision decoder, and control circuitry cooperate to identify check nodes with unsatisfied parity checks after an iteration cycle, identify neighborhood variable nodes that are connected with unsatisfied check nodes, identify satisfied check nodes which are connected to neighborhood variable nodes, and modify messages from neighborhood variable nodes to satisfied check nodes if needed to introduce perturbations to resolve decoding errors.

Abstract: Read-only (“RO”) data to be permanently imprinted in storage cells of a memory array are written to the memory array. One or more over-stress conditions such as heat, over-voltage, over-current and/or mechanical stress are then applied to the memory array or to individual storage cells within the memory array. The over-stress condition(s) act upon one or more state-determining elements of the storage cells to imprint the RO data. The over-stress condition permanently alters a value of a state-determining property of the state-determining element without incapacitating normal operation of the storage cell. The altered value of the state-determining property biases the cell according to the state of the RO data bit. The bias is detectable in the cell read-out signal. A pre-written ferroelectric random-access memory (“FRAM”) array is baked. Baking traps electric dipoles oriented in a direction corresponding to a state of the pre-written data and forms am RO data imprint.

Abstract: Post-processing circuitry for LDPC decoding includes check node processor for processing shifted LLR values, a hard decision decoder circuitry for receiving processed LLR information and performing parity checks on the processed LLR information. Post-processing control circuitry controls updating of LLR information in the check node processor. The check node processor, hard decision decoder, and control circuitry cooperate to identify check nodes with unsatisfied parity checks after an iteration cycle, identify neighborhood variable nodes that are connected with unsatisfied check nodes, identify satisfied check nodes which are connected to neighborhood variable nodes, and modify messages from neighborhood variable nodes to satisfied check nodes if needed to introduce perturbations to resolve decoding errors.

Abstract: Methods and a device for providing for authentication of an integrated circuit (IC) chip are shown. The IC chip contains a physically unclonable function (PUF), a processor, a non-volatile memory, and an encryption module containing first instructions that, when executed by the processor, receive the unique key from the PUF, receive a master key from an external source, encrypt the unique key using the master key and store the encrypted unique key in the non-volatile memory.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes decreasing a supply voltage of a memory array to a first voltage level, the first voltage level being below a normal operating voltage associated with the memory array, reading a first value of a bit cell after the supply voltage has been at the first voltage level, and determining a function based on the first value of the bit cell and a second value, the second value stored in the bit cell when the memory array is operating at a voltage level above the first voltage level, the function to represent an identification of a circuit including the memory array.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes after applying a voltage to a memory array: determining a first duration between the applying of the voltage and a first output of a first bit cell, the first output corresponding to a first value stored in the first bit cell, and determining a second duration between the applying of the voltage and a second output of a second bit cell, the second output corresponding to a second value stored in the second bit cell. The example method further includes determining a function based on a comparison of the first duration and the second duration, the function to establish an identification of a circuit that includes the memory array.

Abstract: Read-only (“RO”) data consisting of a physically unclonable function (“PUF”) pattern is written to a ferroelectric random-access memory (“FRAM”) memory array. The FRAM array is baked to imprint the PUF pattern with a selected average depth of imprint and a corresponding average read reliability. The average depth of imprint and corresponding average read reliability are determined during testing after baking The PUF pattern as read after baking is compared to the PUF pattern as written prior to baking Additional PUF pattern writing and baking cycles may be performed until the average depth of imprint and associated read reliability reach a first selected level. Integrated circuits determined to be over-imprinted by exceeding a second selected level may be rejected. The first and second levels of PUF pattern imprint are selected such as to produce FRAM arrays with a unique fingerprint for each individual FRAM array-containing integrated circuit.

Abstract: Read-only (“RO”) data to be permanently imprinted in storage cells of a memory array are written to the memory array. One or more over-stress conditions such as heat, over-voltage, over-current and/or mechanical stress are then applied to the memory array or to individual storage cells within the memory array. The over-stress condition(s) act upon one or more state-determining elements of the storage cells to imprint the RO data. The over-stress condition permanently alters a value of a state-determining property of the state-determining element without incapacitating normal operation of the storage cell. The altered value of the state-determining property biases the cell according to the state of the RO data bit. The bias is detectable in the cell read-out signal. A pre-written ferroelectric random-access memory (“FRAM”) array is baked. Baking traps electric dipoles oriented in a direction corresponding to a state of the pre-written data and forms am RO data imprint.

Abstract: Read-only (“RO”) data to be permanently imprinted in storage cells of a memory array are written to the memory array. One or more over-stress conditions such as heat, over-voltage, over-current and/or mechanical stress are then applied to the memory array or to individual storage cells within the memory array. The over-stress condition(s) act upon one or more state-determining elements of the storage cells to imprint the RO data. The over-stress condition permanently alters a value of a state-determining property of the state-determining element without incapacitating normal operation of the storage cell. The altered value of the state-determining property biases the cell according to the state of the RO data bit. The bias is detectable in the cell read-out signal. A pre-written ferroelectric random-access memory (“FRAM”) array is baked. Baking traps electric dipoles oriented in a direction corresponding to a state of the pre-written data and forms am RO data imprint.