Abstract: A member for semiconductor manufacturing apparatus includes an upper plate that has a wafer placement surface, that contains an electrostatic electrode and an upper auxiliary electrode parallel to each other, and that comprises ceramics; an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and a lower plate that is joined to a surface of the intermediate plate opposite a surface joined to the upper plate with a second metal joining layer interposed therebetween and that contains a heater electrode and a lower auxiliary electrode parallel to each other.

Abstract: A wafer placement apparatus includes a ceramic plate having a top surface including a wafer placement surface, the ceramic plate allowing at least one of an electrostatic electrode and a heater electrode to be embedded therein; and a cooling plate disposed on an undersurface of the ceramic plate opposite to the wafer placement surface to cool the ceramic plate, wherein the cooling plate includes a coolant channel, and the coolant channel has a multi-layer structure at least partially including two or more layers stacked vertically, the two or more layers being spaced different distances apart from the wafer placement surface.

Abstract: A member for semiconductor manufacturing apparatus includes: an upper plate that has a wafer placement surface, contains no electrode, and is a ceramic material plate; an intermediate plate that is provided on a surface of the upper plate, opposite to the wafer placement surface, that is used as an electrostatic electrode, and that is a conductive material plate; and a lower plate that is joined to a surface of the intermediate plate, opposite to the surface on which the upper plate is provided, and that is a ceramic material plate.

Abstract: An electrostatic chuck heater includes a ceramic plate, an electrostatic electrode, first and second zone heater electrodes, and first and second zone gas grooves. The ceramic plate includes, on its surface, a wafer placement surface. The electrostatic electrode is embedded in the ceramic plate. The first and second zone heater electrodes are embedded in the ceramic plate, corresponding to respective multiple heater zones into which the wafer placement surface is divided, and allow electric power to be individually supplied to the heater zones. Zone gas grooves are provided corresponding to respective multiple gas supply zones into which the wafer placement surface is divided independently of the heater zones, and allow a gas to be individually supplied to the gas supply zones.

Abstract: A member for semiconductor manufacturing apparatus includes an upper plate that has a wafer placement surface, that contains an electrostatic electrode and an upper auxiliary electrode parallel to each other, and that comprises ceramics; an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and a lower plate that is joined to a surface of the intermediate plate opposite a surface joined to the upper plate with a second metal joining layer interposed therebetween and that contains a heater electrode and a lower auxiliary electrode parallel to each other.

Abstract: A semiconductor-manufacturing apparatus member includes an upper plate that has a wafer placement surface having a concave shape or a convex shape, that contains an electrostatic electrode, and that is composed of ceramics; an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and a lower plate that is joined to a surface of the intermediate plate opposite the surface that is joined to the upper plate with a second metal joining layer interposed therebetween, wherein a thermal expansion coefficient of the intermediate plate is larger than thermal expansion coefficients of the upper plate and the lower plate.

Abstract: A ceramic heater including a heater electrode embedded in a plate made of ceramic, wherein, of the heater electrode, a specific area surrounding portion surrounding a specific temperature area in which temperature of the plate becomes low has a smaller thickness than a normal portion of the heater electrode.

Abstract: An electrostatic chuck heater includes a ceramic plate, an electrostatic electrode, first and second zone heater electrodes, and first and second zone gas grooves. The ceramic plate includes, on its surface, a wafer placement surface. The electrostatic electrode is embedded in the ceramic plate. The first and second zone heater electrodes are embedded in the ceramic plate, corresponding to respective multiple heater zones into which the wafer placement surface is divided, and allow electric power to be individually supplied to the heater zones. Zone gas grooves are provided corresponding to respective multiple gas supply zones into which the wafer placement surface is divided independently of the heater zones, and allow a gas to be individually supplied to the gas supply zones.

Abstract: A wafer placement apparatus includes a ceramic plate having a top surface including a wafer placement surface, the ceramic plate allowing at least one of an electrostatic electrode and a heater electrode to be embedded therein; and a cooling plate disposed on an undersurface of the ceramic plate opposite to the wafer placement surface to cool the ceramic plate, wherein the cooling plate includes a coolant channel, and the coolant channel has a multi-layer structure at least partially including two or more layers stacked vertically, the two or more layers being spaced different distances apart from the wafer placement surface.