Patents by Inventor Jozef D. Mitros

Jozef D. Mitros has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for fabricating low CHC degradation mosfet transistors
    Patent number: 6803282
    Abstract: Methods and apparatus are disclosed for fabricating thick and thin gate oxide transistors in a semiconductor device, wherein lightly doped source/drain regions for the thick gate oxide transistors are formed using a threshold voltage adjust implant, and lightly doped source/drain regions for the thin gate oxide transistors are formed using an LDD implant. The use of threshold voltage implantation to form the lightly doped source/drain regions for the thick gate oxide transistors allows lower dopant concentrations therein compared with the thin gate oxide transistors without the need for separate LDD implantation processing for transistors of different gate oxide thicknesses.
    Type: Grant
    Filed: December 7, 2001
    Date of Patent: October 12, 2004
    Assignee: Texas Instruments Incorporated
    Inventors: Jozef D. Mitros, James R. Todd, Shanjen Pan, Tsutomu Kubota
  • Methods for fabricating low CHC degradation MOSFET transistors
    Publication number: 20030109089
    Abstract: Methods and apparatus are disclosed for fabricating thick and thin gate oxide transistors in a semiconductor device, wherein lightly doped source/drain regions for the thick gate oxide transistors are formed using a threshold voltage adjust implant, and lightly doped source/drain regions for the thin gate oxide transistors are formed using an LDD implant. The use of threshold voltage implantation to form the lightly doped source/drain regions for the thick gate oxide transistors allows lower dopant concentrations therein compared with the thin gate oxide transistors without the need for separate LDD implantation processing for transistors of different gate oxide thicknesses.
    Type: Application
    Filed: December 7, 2001
    Publication date: June 12, 2003
    Inventors: Jozef D. Mitros, James R. Todd, Shanjen Pan, Tsutomu Kubota